| 1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells MA Madarang, RJ Chu, Y Kim, E Ju, T Laryn, QND Lung, JH Han, ... ACS Applied Optical Materials 2 (4), 624-631, 2024 | | 2024 |
| 3D stackable synaptic transistor for 3D integrated artificial neural networks SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ... ACS applied materials & interfaces 12 (6), 7372-7380, 2020 | 24 | 2020 |
| An investigation of HZO-based n/p-FeFET operation mechanism and improved device performance by the electron detrapping mode SH Kuk, SM Han, BH Kim, SH Baek, JH Han, SH Kim IEEE Transactions on Electron Devices 69 (4), 2080-2087, 2022 | 17 | 2022 |
| Analysis of interface trap density of plasma post-nitrided Al2O3/SiGe MOS interface with high Ge content using high-temperature conductance method JH Han, M Takenaka, S Takagi Journal of Applied Physics 120 (12), 2016 | 15 | 2016 |
| Benchmarking Si, SiGe, and III–V/Si hybrid SIS optical modulators for datacenter applications F Boeuf, JH Han, S Takagi, M Takenaka Journal of lightwave technology 35 (18), 4047-4055, 2017 | 29 | 2017 |
| Capacitance matching for a non-volatile hybrid SIS optical phase shifter with a ferroelectric capacitor JH Han, SM Han, DH Ahn, WY Choi, JD Song 2021 IEEE 17th International Conference on Group IV Photonics (GFP), 1-2, 2021 | 1 | 2021 |
| Cavity-enhanced InGaAs photo-FET with a metal gate reflector fabricated by wafer bonding on Si S Kang, DH Ahn, I Lee, WJ Choi, J Song, JH Han Optics Express 29 (26), 42630-42641, 2021 | 4 | 2021 |
| Challenges and Opportunities of Near and Mid-Infrared Photonics Based on SiGe and Ge M Takenaka, Y Kim, JH Han, J Kang, S Takagi ECS Transactions 75 (8), 447, 2016 | | 2016 |
| CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si M Takenaka, Y Kim, J Han, J Kang, Y Ikku, Y Cheng, JK Park, SH Kim, ... 2015 IEEE International Electron Devices Meeting (IEDM), 31.5. 1-31.5. 4, 2015 | 4 | 2015 |
| CMOS photonics technologies based on heterogeneous integration on Si M Takenaka, Y Kim, J Han, J Kan, Y Ikku, Y Cheng, J Park, SH Kim, ... IEICE Technical Report; IEICE Tech. Rep. 115 (440), 17-20, 2016 | | 2016 |
| Comparative study of metamorphic InAs layers grown on GaAs and Si for mid-infrared photodetectors G Ryu, SS Kang, JH Han, RJ Chu, D Jung, WJ Choi Solid-State Electronics 176, 107942, 2021 | 2 | 2021 |
| Comprehensive understanding of the HZO-based n/pFeFET operation and device performance enhancement strategy SH Kuk, SM Han, BH Kim, SH Baek, JH Han, S Kim 2021 IEEE International Electron Devices Meeting (IEDM), 33.6. 1-33.6. 4, 2021 | 20 | 2021 |
| Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays T Jin, S Kim, JH Han, DH Ahn, SU An, TH Noh, X Sun, CJ Kim, J Park, ... Nanoscale Advances 5 (5), 1316-1322, 2023 | 9 | 2023 |
| Design of Efficient Phase Shifter using InGaAs-InAs/Ge SIS Capacitor for Mid-IR Photonics Application JH Han, H Kim, WJ Choi, J Song, SH Kim 2018 IEEE 15th International Conference on Group IV Photonics (GFP), 1-2, 2018 | | 2018 |
| Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs SU An, DH Ahn, G Ju, S Chen, YS Ji, JH Han, J Kim, Y Kim IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Effects of AlO Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties K Ko, DH Ahn, H Suh, BK Ju, JH Han IEEE Transactions on Electron Devices, 2023 | 2 | 2023 |
| Efficient low-loss InGaAsP/Si hybrid MOS optical modulator JH Han, F Boeuf, J Fujikata, S Takahashi, S Takagi, M Takenaka Nature Photonics 11 (8), 486-490, 2017 | 227 | 2017 |
| Electrical Analysis for Wafer-Bonded Interfaces of p+GaAs/n+InGaAs and p+InGaAs/n+InGaAs DM Geum, SK Kim, HR Lim, J Park, J Jeong, JH Han, WJ Choi, HJ Kim, ... IEEE Electron Device Letters 42 (6), 800-803, 2021 | | 2021 |
| Electrical characterization of wafer-bonded interfaces of p+ InGaAs/n+ InGaAs and p+ GaAs/n+ InGaAs DM Geum, S Kim, H Lim, J Park, J Jeong, JH Han, WJ Choi, H Kim, S Kim Global Photovoltaic Conference 2021, 2021 | | 2021 |
| Energy-Efficient III–V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing DH Ahn, S Hu, K Ko, D Park, H Suh, GT Kim, JH Han, JD Song, YJ Jeong ACS Applied Materials & Interfaces 14 (21), 24592-24601, 2022 | 6 | 2022 |
Mitsuru TakenakaThe University of Tokyo在 mosfet.t.u-tokyo.ac.jp 的电子邮件经过验证
