| 0-Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification T Zhu, Y Liu, T Ding, WY Fu, J Jarman, CX Ren, RV Kumar, RA Oliver Scientific Reports 7, 2017 | 2 | 2017 |
| 3D atom probe analysis of quantum well and quantum dot materials A Cerezo, L Chang, P Clifton, M Galtrey, S Gerstl, C Humphreys, M Müller, ... Microscopy and Microanalysis 13 (S02), 1608-1609, 2007 | 1 | 2007 |
| 3D Perovskite Passivation with a Benzotriazole-Based 2D Interlayer for High-Efficiency Solar Cells A Caiazzo, A Maufort, BT van Gorkom, WHM Remmerswaal, JF Orri, J Li, ... ACS Applied Energy Materials 6 (7), 3933-3943, 2023 | 4 | 2023 |
| A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers MJ Davies, S Hammersley, FCP Massabuau, P Dawson, RA Oliver, ... Journal of Applied Physics 119 (5), 2016 | 15 | 2016 |
| A full free spectral range tuning of pin doped gallium nitride microdisk cavity N Niu, TL Liu, I Aharonovich, KJ Russell, A Woolf, TC Sadler, HAR El-Ella, ... Applied Physics Letters 101 (16), 2012 | 14 | 2012 |
| A review of barriers women face in research funding processes in the UK JM Jebsen, C Abbott, R Oliver, E Ochu, I Jayasinghe, ... Psychology of Women and Equalities Review 3 (1-2), 2020 | 10 | 2020 |
| A study of the inclusion of prelayers in InGaN/GaN single‐and multiple‐quantum‐well structures MJ Davies, P Dawson, FCP Massabuau, AL Fol, RA Oliver, MJ Kappers, ... physica status solidi (b) 252 (5), 866-872, 2015 | 24 | 2015 |
| A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on -plane and -plane GaN substrates D Kundys, D Sutherland, MJ Davies, F Oehler, J Griffiths, P Dawson, ... Institute of Physics, 2016 | | 2016 |
| A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates D Kundys, D Sutherland, MJ Davies, F Oehler, J Griffiths, P Dawson, ... Science and Technology of advanced MaTerialS 17 (1), 736-743, 2016 | 10 | 2016 |
| Additive GaN solid immersion lenses for enhanced photon extraction efficiency from diamond color centers X Cheng, NK Wessling, S Ghosh, AR Kirkpatrick, MJ Kappers, ... ACS photonics 10 (9), 3374-3383, 2023 | 2 | 2023 |
| Advanced transfer printing with in-situ optical monitoring for the integration of micron-scale devices B Guilhabert, SP Bommer, NK Wessling, D Jevtics, JA Smith, Z Xia, ... IEEE Journal of Selected Topics in Quantum Electronics 29 (3: Photon. Elec …, 2022 | 5 | 2022 |
| Advances in AFM for the electrical characterization of semiconductors RA Oliver Reports on Progress in Physics 71 (7), 076501, 2008 | 236 | 2008 |
| AFM observation of diamond indenters after oxidation at elevated temperatures JM Wheeler, RA Oliver, TW Clyne Diamond and related materials 19 (11), 1348-1353, 2010 | 61 | 2010 |
| Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction F Oehler, ME Vickers, MJ Kappers, RA Oliver Journal of Applied Physics 114 (5), 2013 | 16 | 2013 |
| Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties FCP Massabuau, P Chen, SL Rhode, MK Horton, TJ O'Hanlon, A Kovács, ... Gallium Nitride Materials and Devices XIII 10532, 34-39, 2018 | | 2018 |
| Alloy segregation at stacking faults in zincblende GaN heterostructures B Ding, M Frentrup, SM Fairclough, MJ Kappers, M Jain, A Kovács, ... Journal of Applied Physics 128 (14), 2020 | 16 | 2020 |
| An Introduction to Scanning Probe Microscopy of Semiconductors with Case Studies Concerning Gallium Nitride and Related Materials R Oliver Handbook of Instrumentation and Techniques for Semiconductor Nanostructure …, 2012 | | 2012 |
| An investigation into defect reduction techniques for growth of non‐polar GaN on sapphire D Sutherland, F Oehler, T Zhu, JT Griffiths, TJ Badcock, P Dawson, ... physica status solidi (c) 11 (3‐4), 541-544, 2014 | 17 | 2014 |
| An ultrafast polarised single photon source at 220 K T Wang, TJ Puchtler, T Zhu, JC Jarman, LP Nuttall, RA Oliver, RA Taylor arXiv preprint arXiv:1610.00152, 2016 | 1 | 2016 |
| Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs CX Ren, B Rouet-Leduc, JT Griffiths, E Bohacek, MJ Wallace, ... Superlattices and Microstructures 99, 118-124, 2016 | 15 | 2016 |
Colin HumphreysQueen Mary University of London在 qmul.ac.uk 的电子邮件经过验证
