| (In) GaAsN materials and solar cells for super-high-efficiency multijunction solar cells M Yamaguchi, B Bouzazi, H Suzuki, K Ikeda, N Kojima, Y Ohshita 2012 38th IEEE Photovoltaic Specialists Conference, 000831-000834, 2012 | 3 | 2012 |
| A recombination center in p-type GaAsN grown by chemical beam epitaxy B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi Solar energy materials and solar cells 95 (1), 281-283, 2011 | 5 | 2011 |
| Advances with vertical epitaxial heterostructure architecture (VEHSA) phototransducers for optical to electrical power conversion efficiencies exceeding 50 percent S Fafard, F Proulx, MCA York, M Wilkins, CE Valdivia, M Bajcsy, D Ban, ... Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V 9743 …, 2016 | 14 | 2016 |
| AlN grown by CBE for power device applications G Gommé, A Cutivet, B Bouzazi, AR Boucherif, T MacElwee, C Rodriguez, ... AIP Advances 10 (6), 2020 | | 2020 |
| Amin, N., see Chelvanathan, P. S387–S391 M Arai, Y Sato, EJ Bae, MS Park, HK Bae, SY Park, JS Bae, KR Bae, ... structure 395, S398, 0 | | |
| Analysis of current transport mechanisms in GaAsN homojunction solar cell grown by chemical beam epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 1-7, 2012 | 8 | 2012 |
| Analysis of defects and impurities in new (In) GaAsN materials for concentrator multi-junction solar cells M Yamaguchi, Y Ohshita, N Kojima, H Suzuki, B Bouzazi 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 002332-002335, 2009 | 5 | 2009 |
| Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi AIP Conference Proceedings 1556 (1), 30-33, 2013 | 5 | 2013 |
| Analysis of the main acceptor defect in p-type GaAsN grown by chemical beam epitaxy O Elleuch, B Bouzazi, H Kowaki, K Ikeda, N Kojima, Y Ohshita, ... Japanese Journal of Applied Physics 53 (9), 091201, 2014 | 4 | 2014 |
| Arsenic source flow rate dependence of minority carrier lifetime in GaAsN grown by chemical beam epitaxy B Bouzazi, M Aisaka, N Kojima, Y Ohshita, M Yamaguchi 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2078-2081, 2013 | | 2013 |
| Bader, S. 368 Bagienski, William 77, 148, 165 Baig, Hasan 98 Ballesteros-Sánchez, Isabel 360 Barrau, J. 217 F Abulfotuh, H Ackler, I Aeby, J Aguilera, A Aho, T Aihara, W Aipperspach, ... Catena 1000, 139, 0 | | |
| Can plasma etching be used in photovoltaics? M Darnon, A Jaouad, M de Lafontaine, P Albert, C Colin, B Bouzazi, ... Plasma Etch and Strip in Microtechnologies conference, 2016 | | 2016 |
| Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi Journal of alloys and compounds 552, 469-474, 2013 | 15 | 2013 |
| Defects in Electron-Irradiated and Hydrogenated GaAsN Grown by Chemical Beam Epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi | | |
| Design of thin InGaAsN(Sb) junctions for use in four-junction concentrating photovoltaic devices MM Wilkins, J Gupta, A Jaouad, B Bouzazi, S Fafard, A Boucherif, ... Journal of Photonics for Energy 7 (2), 022502-022502, 2017 | 5 | 2017 |
| Design optimizations of InGaAsN (Sb) subcells for concentrator photovoltaic systems R Cheriton, MM Wilkins, P Sharma, CE Valdivia, AH Trojnar, H Schriemer, ... Journal of Vacuum Science & Technology B 34 (2), 2016 | 5 | 2016 |
| Designs Optimisations for Concentrated Solar Systems Using Dilute Nitride Four-Junction Photovoltaics K Hinzer, CE Valdivia, MM Wilkins, R Cheriton, P Sharma, AH Trojnar, ... | | |
| Double carriers pulse DLTS for the characterization of electron–hole recombination process in GaAsN grown by chemical beam epitaxy B Bouzazi, H Suzuki, N Kojima, Y Ohshita, M Yamaguchi Physica B: Condensed Matter 406 (5), 1070-1075, 2011 | 21 | 2011 |
| Effect of arsenic source flow rate on the lattice defects in GaAsN grown by chemical beam epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi physica status solidi (c) 10 (11), 1477-1480, 2013 | 1 | 2013 |
| Effect of electron and proton irradiation on recombination centers in GaAsN grown by chemical beam epitaxy B Bouzazi, N Kojima, Y Ohshita, M Yamaguchi Current applied physics 13 (7), 1269-1274, 2013 | 11 | 2013 |
Richard ArèsUniversité de Sherbrooke在 usherbrooke.ca 的电子邮件经过验证
