| (Paper CH011) effect of strain, microstructure, and interfaces on tunability and relaxor-like dielectric behavior in barium strontium titanate thin-films RJ Zednik, PC McIntyre, JD Baniecki, M Ishii, K Kurihara 2008 17th IEEE International Symposium on the Applications of Ferroelectrics …, 2008 | | 2008 |
| > 10% solar-to-hydrogen efficiency unassisted water splitting on ALD-protected silicon heterojunction solar cells CS Tan, KW Kemp, MR Braun, AC Meng, W Tan, CED Chidsey, W Ma, ... Sustainable Energy & Fuels 3 (6), 1490-1500, 2019 | 39 | 2019 |
| Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ... IEEE Electron Device Letters 30 (11), 1128-1130, 2009 | 116 | 2009 |
| 0.37 mS/μm In0.53Ga0.47As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain U Singisetti, MA Wistey, GJ Burek, AK Baraskar, J Cagnon, BJ Thibeault, ... 2009 Device Research Conference, 253-254, 2009 | 1 | 2009 |
| 0.37 mS/µm In0. 53Ga0. 47As MOSFET with 5 nm channel and Self-aligned Epitaxial Raised Source/Drain U Singisetti, MA Wistey, GJ Burek, AK Baraskar, J Cagnon, BJ Thibeault, ... IEEE Device Research Conf, 253, 2009 | 2 | 2009 |
| 17.2 Improvement in High-k (HfO~ 2/SiO~ 2) Reliability by Incorporation of Fluorine KI Seo, R Sreenivasan, PC McIntyre, KC Saraswat INTERNATIONAL ELECTRON DEVICES MEETING 1 (1), 429-432, 2003 | | 2003 |
| 2022 solar fuels roadmapThe G Segev, J Kibsgaard, C Hahn, ZJ Xu, WHS Cheng, TG Deutsch, C Xiang, ... Journal of physics: D. Applied physics 55 (32), 0 | | |
| 3D-stacked strained SiGe/Ge gate-all-around (GAA) structure fabricated by 3D Ge condensation J Suh, AC Meng, M Jaikissoon, M Braun, TR Kim, AF Marshall, A Pakzad, ... 2019 Device Research Conference (DRC), 249-250, 2019 | 4 | 2019 |
| 4 bits/cell hybrid 1F1R for high density embedded non-volatile memory and its application for compute in memory WC Chen, F Huang, S Qin, Z Yu, Q Lin, PC McIntyre, SS Wong, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 4 | 2022 |
| A Distributed Bulk-Oxide Trap Model forInGaAs MOS Devices Y Yuan, B Yu, J Ahn, PC McIntyre, PM Asbeck, MJW Rodwell, Y Taur IEEE Transactions on Electron Devices 59 (8), 2100-2106, 2012 | 165 | 2012 |
| A Distributed Model for Border Traps in MOS Devices Y Yuan, L Wang, B Yu, B Shin, J Ahn, PC McIntyre, PM Asbeck, ... IEEE Electron Device Letters 32 (4), 485-487, 2011 | 214 | 2011 |
| A germanium NMOSFET process integrating metal gate and improved hi-/spl kappa/dielectrics CO Chui, H Kim, PC McIntyre, KC Saraswat IEEE International Electron Devices Meeting 2003, 18.3. 1-18.3. 4, 2003 | 87 | 2003 |
| a good fit MOS Al2O3-InGaAs, HP Yuan, JA Chen, PC McIntyre, Y Taur Electronics Letters 49 (7), 2013 | | 2013 |
| A novel self-aligned gate-lost MOSFET process comparing high-/spl kappa/candidates CO Chui, H Kim, JP McVittie, BB Triplett, PC McIntyre, KC Saraswat International Semiconductor Device Research Symposium, 2003, 464-465, 2003 | 4 | 2003 |
| A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/dielectric and metal gate CO Chui, H Kim, D Chi, BB Triplett, PC Mcintyre, KC Saraswat Digest. International Electron Devices Meeting,, 437-440, 2002 | 323 | 2002 |
| A three-dimensional phase field model for nanowire growth by the vapor–liquid–solid mechanism Y Wang, S Ryu, PC McIntyre, W Cai Modelling and Simulation in Materials Science and Engineering 22 (5), 055005, 2014 | 23 | 2014 |
| A unified two-band model for oxide traps and interface states in MOS capacitors Y Taur, HP Chen, Q Xie, J Ahn, PC McIntyre, D Lin, A Vais, D Veksler IEEE Transactions on Electron Devices 62 (3), 813-820, 2015 | 10 | 2015 |
| Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification R Chen, H Kim, PC McIntyre, DW Porter, SF Bent Applied Physics Letters 86 (19), 2005 | 186 | 2005 |
| Adhesion promoting sacrificial etch stop layer in advanced capacitor structures MR Visokay, L Colombo, P McIntyre, SR Summerfelt US Patent 5,972,722, 1999 | 74 | 1999 |
| Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0. 53Ga0. 47As in surface and buried channel flatband metal-oxide-semiconductor field effect … GW Paterson, SJ Bentley, MC Holland, IG Thayne, J Ahn, RD Long, ... Journal of Applied Physics 111 (10), 2012 | 6 | 2012 |
