关注
John McCaffrey
John McCaffrey
在 nrc-cnrc.gc.ca 的电子邮件经过验证
标题
引用次数
年份
A single-centre analysis of 30 patients with relapsed germ cell tumours treated with the TI-CE regimen
G O'Kane, D Bracken-Clarke, N Gardiner, G Lee, M Ni Chonghaile, ...
Bone Marrow Transplantation 51 (6), 856-859, 2016
2016
A transmission electron microscope (TEM) calibration standard sample for all magnification, camera constant, and image/diffraction pattern rotation calibrations
JP McCaffrey, JM Baribeau
Microscopy research and technique 32 (5), 449-454, 1995
371995
Abstracts, 50th Annual Meeting, Eastern Branch Entomological Society of America
AH Abdel-Monem, EA Cameron, RO Mumma, S Ahmad, JT Andaloro, ...
Journal of the New York Entomological Society 86 (4), 274-330, 1978
1978
AlGaAs/InGaAs/GaAs optoelectronic structures on (111) B GaAs
F Chatenoud, S Janz, R Normandin, H Dai, JP McCaffrey
Canadian journal of physics 70 (10-11), 1082-1085, 1992
11992
An annealing study of strain relaxation and dislocation generation in Si1−xGex/Si heteroepitaxy
PY Timbrell, JM Baribeau, DJ Lockwood, JP McCaffrey
Journal of applied physics 67 (10), 6292-6300, 1990
591990
Annealing studies of highly doped boron superlattices
TE Jackman, DC Houghton, JA Jackman, MW Denhoff, S Kechang, ...
Journal of applied physics 66 (5), 1984-1992, 1989
61989
Application of the small‐angle cleavage technique to thickness measurement of TEM samples
JP McCaffrey
Microscopy research and technique 36 (5), 372-377, 1997
81997
Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3
TE Jackman, DC Houghton, MW Denhoff, S Kechang, J McCaffrey, ...
Applied physics letters 53 (10), 877-879, 1988
41988
Broad Band vs Phonon Resolved Luminescence in Si1− xGex/Si Heterostructures Grown by Molecular Beam Epitaxy
DC Houghton, NL Rowell, JP Noel, MM Dion, J McCaffrey, M Davies, ...
MRS Online Proceedings Library (OPL) 281, 455, 1992
1992
Calibrating the TEM
JP McCaffrey
Microscopy Today 5 (9), 16-17, 1997
41997
Can ohmic spikes define quantum systems?
RP Taylor, R Newbury, AS Sachrajda, Y Feng, PT Coleridge, ...
Japanese journal of applied physics 36 (6S), 3964, 1997
41997
Carrier Transport and Electronic Properties of Nanocrystalline Silicon Superlattices
L Tsybeskov, GF Grom, KD Hirschman, PM Fauchet, JP McCaffrey, ...
APS March Meeting Abstracts, E20. 06, 1998
1998
Carrier Tunneling, Current Instabilities, and Negative Differential Conductivity in Nanocrystalline Silicon–Silicon Dioxide Superlattices
BV Kamenev, GF Grom, DJ Lockwood, JP McCaffrey, B Laikhtman, ...
MRS Online Proceedings Library (OPL) 737, F11. 6, 2002
2002
Channeling studies of implantation damage in SiGe superlattices and SiGe alloys
M Vos, C Wu, IV Mitchell, TE Jackman, JM Baribeau, JP McCaffrey
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1992
231992
Characterisation of epitaxial CdTe/InSb heterostructures prepared by magnetron sputtering
SR Das, JP McCaffrey, JG Cook, JB Webb
Semiconductor science and technology 5 (3S), S315, 1990
11990
Characterization of Bi12GeO20 processed in a microgravity environment
N Maffei, DHH Quon, J Aota, TT Chen, J McCaffrey, S Charbonneau
Journal of crystal growth 181 (4), 382-389, 1997
101997
Characterization of GaAs (110) Nitrided by an Electron‐Cyclotron Resonance Plasma Source Using N 2
D Landheer, K Rajesh, JE Hulse, GI Sproule, J McCaffrey, T Quance, ...
Journal of the Electrochemical Society 147 (2), 731, 2000
22000
Characterization of GaAs and Ge Films on (100) Silicon
JM Baribeau, DC Houghton, P MaignÉ, WT Moore, RLS Devine, ...
MRS Online Proceedings Library (OPL) 91, 175, 1987
11987
CHARACTERIZATION OF GaAs AND Ge FILMS ON (100) SILICON J.-M. BARIBEAU, DC HOUGHTON, P. MAIGNÉ, WT MOORE, RLS DEVINE
MW DENHOFF, RJ STONER, J MCCAFFREY, TE JACKMAN, KIA OR
Heteroepitaxy on Silicon II: Volume 91, 175, 1987
1987
Characterization of Gd2 O 3 Films Deposited on Si (100) by Electron-Beam Evaporation
D Landheer, JA Gupta, GI Sproule, JP McCaffrey, MJ Graham, KC Yang, ...
Journal of the Electrochemical Society 148 (2), G29, 2001
932001
系统目前无法执行此操作,请稍后再试。
文章 1–20