A single-centre analysis of 30 patients with relapsed germ cell tumours treated with the TI-CE regimen G O'Kane, D Bracken-Clarke, N Gardiner, G Lee, M Ni Chonghaile, ... Bone Marrow Transplantation 51 (6), 856-859, 2016 | | 2016 |
A transmission electron microscope (TEM) calibration standard sample for all magnification, camera constant, and image/diffraction pattern rotation calibrations JP McCaffrey, JM Baribeau Microscopy research and technique 32 (5), 449-454, 1995 | 37 | 1995 |
Abstracts, 50th Annual Meeting, Eastern Branch Entomological Society of America AH Abdel-Monem, EA Cameron, RO Mumma, S Ahmad, JT Andaloro, ... Journal of the New York Entomological Society 86 (4), 274-330, 1978 | | 1978 |
AlGaAs/InGaAs/GaAs optoelectronic structures on (111) B GaAs F Chatenoud, S Janz, R Normandin, H Dai, JP McCaffrey Canadian journal of physics 70 (10-11), 1082-1085, 1992 | 1 | 1992 |
An annealing study of strain relaxation and dislocation generation in Si1−xGex/Si heteroepitaxy PY Timbrell, JM Baribeau, DJ Lockwood, JP McCaffrey Journal of applied physics 67 (10), 6292-6300, 1990 | 59 | 1990 |
Annealing studies of highly doped boron superlattices TE Jackman, DC Houghton, JA Jackman, MW Denhoff, S Kechang, ... Journal of applied physics 66 (5), 1984-1992, 1989 | 6 | 1989 |
Application of the small‐angle cleavage technique to thickness measurement of TEM samples JP McCaffrey Microscopy research and technique 36 (5), 372-377, 1997 | 8 | 1997 |
Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3 TE Jackman, DC Houghton, MW Denhoff, S Kechang, J McCaffrey, ... Applied physics letters 53 (10), 877-879, 1988 | 4 | 1988 |
Broad Band vs Phonon Resolved Luminescence in Si1− xGex/Si Heterostructures Grown by Molecular Beam Epitaxy DC Houghton, NL Rowell, JP Noel, MM Dion, J McCaffrey, M Davies, ... MRS Online Proceedings Library (OPL) 281, 455, 1992 | | 1992 |
Calibrating the TEM JP McCaffrey Microscopy Today 5 (9), 16-17, 1997 | 4 | 1997 |
Can ohmic spikes define quantum systems? RP Taylor, R Newbury, AS Sachrajda, Y Feng, PT Coleridge, ... Japanese journal of applied physics 36 (6S), 3964, 1997 | 4 | 1997 |
Carrier Transport and Electronic Properties of Nanocrystalline Silicon Superlattices L Tsybeskov, GF Grom, KD Hirschman, PM Fauchet, JP McCaffrey, ... APS March Meeting Abstracts, E20. 06, 1998 | | 1998 |
Carrier Tunneling, Current Instabilities, and Negative Differential Conductivity in Nanocrystalline Silicon–Silicon Dioxide Superlattices BV Kamenev, GF Grom, DJ Lockwood, JP McCaffrey, B Laikhtman, ... MRS Online Proceedings Library (OPL) 737, F11. 6, 2002 | | 2002 |
Channeling studies of implantation damage in SiGe superlattices and SiGe alloys M Vos, C Wu, IV Mitchell, TE Jackman, JM Baribeau, JP McCaffrey Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1992 | 23 | 1992 |
Characterisation of epitaxial CdTe/InSb heterostructures prepared by magnetron sputtering SR Das, JP McCaffrey, JG Cook, JB Webb Semiconductor science and technology 5 (3S), S315, 1990 | 1 | 1990 |
Characterization of Bi12GeO20 processed in a microgravity environment N Maffei, DHH Quon, J Aota, TT Chen, J McCaffrey, S Charbonneau Journal of crystal growth 181 (4), 382-389, 1997 | 10 | 1997 |
Characterization of GaAs (110) Nitrided by an Electron‐Cyclotron Resonance Plasma Source Using N 2 D Landheer, K Rajesh, JE Hulse, GI Sproule, J McCaffrey, T Quance, ... Journal of the Electrochemical Society 147 (2), 731, 2000 | 2 | 2000 |
Characterization of GaAs and Ge Films on (100) Silicon JM Baribeau, DC Houghton, P MaignÉ, WT Moore, RLS Devine, ... MRS Online Proceedings Library (OPL) 91, 175, 1987 | 1 | 1987 |
CHARACTERIZATION OF GaAs AND Ge FILMS ON (100) SILICON J.-M. BARIBEAU, DC HOUGHTON, P. MAIGNÉ, WT MOORE, RLS DEVINE MW DENHOFF, RJ STONER, J MCCAFFREY, TE JACKMAN, KIA OR Heteroepitaxy on Silicon II: Volume 91, 175, 1987 | | 1987 |
Characterization of Gd2 O 3 Films Deposited on Si (100) by Electron-Beam Evaporation D Landheer, JA Gupta, GI Sproule, JP McCaffrey, MJ Graham, KC Yang, ... Journal of the Electrochemical Society 148 (2), G29, 2001 | 93 | 2001 |