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Bruno Gayral
Bruno Gayral
Researcher, CEA Grenoble, France
在 cea.fr 的电子邮件经过验证 - 首页
标题
引用次数
年份
13 Brazilian Workshop on Semiconductor Physics
JM Gérard, Y Nowicki, R Hahner, B Gayral, J Claudon, G Lecamp, ...
A nitride-on-Silicon microdisk laser emitting at 275 nm and room-temperature
T Guillet, J Selles, C Brimont, G Cassabois, B Gayral, M Mexis, F Semond, ...
The European Conference on Lasers and Electro-Optics, CB_4_3, 2015
2015
A novel way of measuring lifetime at the nanometer scale using specific fast electron‐matter interactions
S Meuret, L Tizei, T Auzelle, T Cazimajou, R Bourrellier, R Songmuang, ...
European Microscopy Congress 2016: Proceedings, 568-569, 2016
2016
AlGaN nanowires and annealed quantum dots for UV emission
C Bougerol, V Fellmann, A Pierret, C Leclere, H Renevier, B Gayral, ...
AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate
D Néel, S Sergent, M Mexis, D Sam-Giao, T Guillet, C Brimont, ...
Applied Physics Letters 98 (26), 2011
502011
Aluminum nitride photonic crystals and microdiscs for ultra-violet nanophotonics
D Néel, I Roland, X Checoury, M El Kurdi, S Sauvage, C Brimont, T Guillet, ...
Advances in Natural Sciences: Nanoscience and Nanotechnology 5 (2), 023001, 2014
242014
Analysis of low-threshold optically pumped III-nitride microdisk lasers
F Tabataba-Vakili, C Brimont, B Alloing, B Damilano, L Doyennette, ...
Applied Physics Letters 117 (12), 2020
242020
Anti-binding of biexcitons in (2 1 1) B InAs/GaAs piezoelectric quantum dots
GE Dialynas, C Xenogianni, S Tsintzos, E Trichas, PG Savvidis, ...
Physica E: Low-dimensional Systems and Nanostructures 40 (6), 2113-2115, 2008
22008
Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries
T Auzelle, B Haas, M Den Hertog, JL Rouvière, B Daudin, B Gayral
Applied Physics Letters 107 (5), 2015
552015
Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
M Spies, MI Den Hertog, P Hille, J Schörmann, J Polaczyński, B Gayral, ...
Nano Letters 17 (7), 4231-4239, 2017
502017
Blue microlasers integrated on a photonic platform on silicon
F Tabataba-Vakili, L Doyennette, C Brimont, T Guillet, S Rennesson, ...
ACS photonics 5 (9), 3643-3648, 2018
362018
Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy
XJ Chen, B Gayral, D Sam-Giao, C Bougerol, C Durand, J Eymery
Applied Physics Letters 99 (25), 2011
482011
Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires
G Nogues, T Auzelle, M Den Hertog, B Gayral, B Daudin
Applied Physics Letters 104 (10), 2014
372014
Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure
A Kiraz, P Michler, C Becher, B Gayral, A Imamoğlu, L Zhang, E Hu, ...
Applied Physics Letters 78 (25), 3932-3934, 2001
3032001
Cavity-quantum electrodynamics with quantum dots
A Kiraz, C Reese, B Gayral, L Zhang, WV Schoenfeld, BD Gerardot, ...
Journal of Optics B: Quantum and Semiclassical Optics 5 (2), 129, 2003
622003
Chemical composition fluctuations and strain relaxation in InGaN nanowires: The role of the metal/nitrogen flux ratio
X Zhang, M Belloeil, PH Jouneau, C Bougerol, B Gayral, B Daudin
Materials Science in Semiconductor Processing 55, 79-84, 2016
82016
Comment on “single-mode spontaneous emission from a single quantum dot in a three-dimensional microcavity”
B Gayral, JM Gérard
Physical review letters 90 (22), 3903, 2003
232003
Comparison of UV-C and blue emitting nitride-on-silicon microdisk lasers
J Sellés, T Guillet, V Crepel, B Gayral, B Damilano, M Leroux, M Mexis, ...
34th International Conference on the Physics of Semiconductors (ICPS), 2018
2018
Comprehensive Electro-Optical Investigation of a Ga-Doped AlN Nanowire LED for Applications in the UV-C Range
R Vermeersch, E Robin, G Jacopin, B Gayral, J Pernot, B Daudin
ACS Applied Nano Materials 6 (15), 13945-13951, 2023
2023
Contrôle de l'émission spontanée d'un émetteur à l'état solide
B Gayral, P Senellart
Images de la Physique, 64-70, 2007
12007
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