| 2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface G Sfuncia, G Nicotra, F Giannazzo, B Pécz, GK Gueorguiev, ... CrystEngComm 25 (41), 5810-5817, 2023 | 23 | 2023 |
| 2D graphitic-like gallium nitride and structural selectivity in confinement at graphene/SiC interface G Sfuncia, G Nicotra, F Giannazzo, B Pécz, GK Gueorguiev, ... arXiv preprint arXiv:2206.10247, 2022 | | 2022 |
| A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method RA Puglisi, S Caccamo, L D'Urso, G Fisichella, F Giannazzo, M Italia, ... physica status solidi (a) 212 (8), 1685-1694, 2015 | 21 | 2015 |
| A look underneath the SiO2/4H-SiC interface after N2O thermal treatments P Fiorenza, F Giannazzo, LK Swanson, A Frazzetto, S Lorenti, ... Beilstein Journal of Nanotechnology 4 (1), 249-254, 2013 | 20 | 2013 |
| A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs P Fiorenza, A Frazzetto, LK Swanson, F Giannazzo, F Roccaforte Materials Science Forum 740, 699-702, 2013 | 1 | 2013 |
| A review on metal nanoparticles nucleation and growth on/in graphene F Ruffino, F Giannazzo Crystals 7 (7), 219, 2017 | 44 | 2017 |
| Acceptor, compensation, and mobility profiles in multiple Al implanted 4H‐SiC F Giannazzo, F Roccaforte, V Raineri Applied Physics Letters 91 (20), 2007 | 59 | 2007 |
| Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy V Raineri, L Calcagno, F Giannazzo, D Goghero, F Musumeci, ... Materials Science Forum 433, 375-378, 2003 | 10 | 2003 |
| Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide M Spera, G Greco, A Severino, M Vivona, P Fiorenza, F Giannazzo, ... Applied Physics Letters 117 (1), 2020 | 8 | 2020 |
| Advanced materials nanocharacterization F Giannazzo, P Eyben, J Baranowski, J Camassel, S Lányi Nanoscale research letters 6, 1-2, 2011 | 8 | 2011 |
| Advances in the fabrication of graphene transistors on flexible substrates G Fisichella, SL Verso, S Di Marco, V Vinciguerra, E Schilirò, S Di Franco, ... Beilstein Journal of Nanotechnology 8 (1), 467-474, 2017 | 22 | 2017 |
| Advances in the Fabrication of Large-Area Back-Gated Graphene Field-Effect Transistors on Plastics: Platform for Flexible Electronics and Sensing G Fisichella, S Lo Verso, S Di Marco, V Vinciguerra, E Schilirò, ... GraphITA: Selected papers from the Workshop on Synthesis, Characterization …, 2017 | | 2017 |
| Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices E Schilirò, P Fiorenza, R Lo Nigro, B Galizia, G Greco, S Di Franco, ... Materials 16 (16), 5638, 2023 | 2 | 2023 |
| Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene E Schilirò, RL Nigro, SE Panasci, FM Gelardi, S Agnello, R Yakimova, ... Carbon 169, 172-181, 2020 | 26 | 2020 |
| Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ... ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017 | 92 | 2017 |
| Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process M Canino, F Giannazzo, F Roccaforte, A Poggi, S Solmi, V Raineri, ... Materials science forum 556, 571-574, 2007 | 2 | 2007 |
| Anchoring molecular magnets on the Si (100) surface GG Condorelli, A Motta, IL Fragalà, F Giannazzo, V Raineri, A Caneschi, ... ANGEWANDTE CHEMIE. INTERNATIONAL EDITION 43, 4081-4084, 2004 | 123 | 2004 |
| Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC F Giannazzo, F Roccaforte, D Salinas, V Raineri Materials Science Forum 768 (600), 603, 2008 | 1 | 2008 |
| Anomalous Fowler-Nordheim Tunneling through SiO2/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements P Fiorenza, A La Magna, M Vivona, F Giannazzo, F Roccaforte Materials Science Forum 897, 123-126, 2017 | 1 | 2017 |
| Assessing the performance of two and three dimensional dopant profiling techniques for sub-65nm technologies P Eyben, J Mody, SC Vemula, S Koelling, R Verheyden, W Vandervorst, ... | | 2007 |
Fabrizio RoccaforteConsiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi在 imm.cnr.it 的电子邮件经过验证
