AlGaN/GaN HEMT based sensor and system for polar liquid detection N Chaturvedi, K Singh, P Kachhawa, R Lossy, S Mishra, A Chauhan, ... Sensors and Actuators A: Physical 302, 111799, 2020 | 23 | 2020 |
Analysis of Interface Charge Using Capacitance-Voltage Method for Ultra Thin HfO2 Gate Dielectric based MOS Devices NP Maity, RR Thakur, R Maity, RK Thapa, S Baishya Procedia Computer Science 57, 757-760, 2015 | 19 | 2015 |
Detection of heavy metal ions using meander gated GaN HEMT sensor S Mishra, P Kachhawa, RR Thakur, AK Jain, K Singh, N Chaturvedi Sensors and Actuators A: Physical 332, 113119, 2021 | 18 | 2021 |
Analysis of Interface Charge Densities for High-k Dielectric Materials based Metal Oxide Semiconductor Devices NP Maity, RR Thakur, R Maity, RK Thapa, S Baishya International Journal of Nanoscience 15 (05n06), 1660011, 2016 | 14 | 2016 |
Analysis of interface trap densities for Al2O3 dielectric material based ultra thin MOS devices NP Maity, RR Thakur, R Maity, RK Thapa, S Baishya Applied Mechanics and Materials 860, 25-29, 2017 | 12 | 2017 |
Interface Charge Density Measurement for Ultra Thin ZrO2 Material based MOS Devices Using Conductance Method NP Maity, RR Thakur, R Maity, RK Thapa, S Baishya Procedia Computer Science 57, 761-765, 2015 | 12 | 2015 |
Performance reliability of ultra-thin Si-SiO2, Si-Al2O3, Si-ZrO2 and Si-HfO2 interface in rectangular steep retrograded nano-regimes devices RR Thakur, P Singh Microelectronics Reliability 96, 21-28, 2019 | 9 | 2019 |
Design, optimization, and analysis of Si and GaN nanowire FETs for 3 nm technology RR Thakur, N Chaturvedi Semiconductor Science and Technology 36 (7), 075013, 2021 | 7 | 2021 |
Q-FinFET: the next generation FinFET RR Thakur, P Singh Journal of Nanoelectronics and Optoelectronics 14 (1), 92-98, 2019 | 7 | 2019 |
High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor S Mishra, P Kachhawa, AK Jain, RR Thakur, N Chaturvedi Lab on a Chip 22 (21), 4129-4140, 2022 | 6 | 2022 |
Scalability of GaN Nanowire FET beyond 5 nm: A Simulation Study RR Thakur, N Chaturvedi Journal of Electronic Materials 50 (7), 4128-4134, 2021 | 3 | 2021 |
Sub-5nm E/D GaN Nanowire FET for Low Power High Speed Logic Applications RR Thakur, N Chaturvedi 2021 IEEE International Conference on Nanoelectronics, Nanophotonics …, 2021 | 3 | 2021 |
Investigations of Interface Trap Densities (Dit) and Interface Charges (Qit) for Steep Retrograded Al2O3 and HfO2 based Nano Regime GAA FinFETs RR Thakur, P Singh Materials Today: Proceedings 24, 2011-2018, 2020 | 3 | 2020 |
First Demonstration of GaN HEMT-based Hand-held System for Non-Invasive Detection of Traumatic Brain Injury using Saliva RR Thakur, AK Saini, R Taliyan, N Chaturvedi IEEE Sensors Journal, 2023 | 2 | 2023 |
200 V-Depletion mode GaN HEMT on Si P Kachhawa, S Mishra, AK Jain, RR Thakur, N Chaturvedi 2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020 | 2 | 2020 |
Study of Carrier Scattering and Quantization Effects in Steep Retrograded Gate All around FinFETs for Nano Technology Applications RR Thakur, P Singh Materials Today: Proceedings 24, 2024-2029, 2020 | 2 | 2020 |
Analysis of interface trap charges and densities using capacitance-voltage (CV) and conductance voltage (GV) methods in steep retrograded Al2O3, ZrO2 and HfO2 based gate all … RR Thakur, P Singh AIP Conference Proceedings 2009 (1), 2018 | 2 | 2018 |
Effects of Interface Charge (Qit) and Interface Trap Density (Dit) on A12O3, ZrO2 and HfO2 based Nano Regime Multi-Gate Devices RR Thakur, P Singh 2018 4th International Conference on Devices, Circuits and Systems (ICDCS …, 2018 | 2 | 2018 |
Bio-interface analysis and detection of Aβ using GaN HEMT-based biosensor RR Thakur, KC Sarathlal, S Mishra, R Taliyan, N Chaturvedi Journal of The Electrochemical Society 171 (3), 037507, 2024 | 1 | 2024 |
Gate-All-Around GaN Nanowire FET as a Potential Transistor at 5 nm Technology for Low-Power Low-Voltage Applications RR Thakur, N Chaturvedi Nano 16 (08), 2150096, 2021 | 1 | 2021 |