| Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ... IEEE Electron Device Letters 39 (6), 869-872, 2018 | 295 | 2018 |
| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 255 | 2022 |
| Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2 W Li, K Nomoto, Z Hu, D Jena, HG Xing IEEE Electron Device Letters 41 (1), 107-110, 2019 | 248 | 2019 |
| Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors Z Hu, K Nomoto, W Li, Z Zhang, N Tanen, QT Thieu, K Sasaki, A Kuramata, ... Applied Physics Letters 113 (12), 2018 | 163 | 2018 |
| Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ... Nature 604 (7904), 65-71, 2022 | 151 | 2022 |
| 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of< 1 μA/cm2 W Li, Z Hu, K Nomoto, Z Zhang, JY Hsu, QT Thieu, K Sasaki, A Kuramata, ... Applied Physics Letters 113 (20), 2018 | 151 | 2018 |
| Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes W Li, D Saraswat, Y Long, K Nomoto, D Jena, HG Xing Applied Physics Letters 116 (19), 2020 | 120 | 2020 |
| 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu, K Sasaki, A Kuramata, ... 2018 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2018 | 104 | 2018 |
| Design and realization of GaN trench junction-barrier-Schottky-diodes W Li, K Nomoto, M Pilla, M Pan, X Gao, D Jena, HG Xing IEEE Transactions on Electron Devices 64 (4), 1635-1641, 2017 | 97 | 2017 |
| Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV W Li, K Nomoto, Z Hu, T Nakamura, D Jena, HG Xing 2019 IEEE International Electron Devices Meeting (IEDM), 12.4. 1-12.4. 4, 2019 | 96 | 2019 |
| GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ... IEEE Electron Device Letters 41 (5), 689-692, 2020 | 88 | 2020 |
| Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes W Li, K Nomoto, Z Hu, D Jena, HG Xing Applied Physics Express 12 (6), 061007, 2019 | 76 | 2019 |
| 1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing IEEE Electron Device Letters 38 (8), 1071-1074, 2017 | 75 | 2017 |
| Activation of buried p-GaN in MOCVD-regrown vertical structures W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, J Xie, M Pilla, ... Applied Physics Letters 113 (6), 2018 | 58 | 2018 |
| Development of GaN vertical trench-MOSFET with MBE regrown channel W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, M Pilla, D Jena, ... IEEE Transactions on Electron Devices 65 (6), 2558-2564, 2018 | 54 | 2018 |
| 1.6 kV Vertical Ga2O3 FinFETs With Source-Connected Field Plates and Normally-off Operation Z Hu, K Nomoto, W Li, R Jinno, T Nakamura, D Jena, H Xing 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 48 | 2019 |
| Guiding principles for trench Schottky barrier diodes based on ultrawide bandgap semiconductors: a case study in Ga₂O₃ W Li, K Nomoto, Z Hu, D Jena, HG Xing IEEE Transactions on Electron Devices 67 (10), 3938-3947, 2020 | 45 | 2020 |
| Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ... Applied Physics Letters 119 (6), 2021 | 42 | 2021 |
| Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β-Ga2O3 W Li, K Nomoto, D Jena, HG Xing Applied Physics Letters 117 (22), 2020 | 37 | 2020 |
| Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements E Fabris, C De Santi, A Caria, W Li, K Nomoto, Z Hu, D Jena, HG Xing, ... IEEE Transactions on Electron Devices 67 (10), 3954-3959, 2020 | 34 | 2020 |
Huili Grace XingProf. of ECE & MSE, Cornell University在 cornell.edu 的电子邮件经过验证
