Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor Y Makarov, M Spencer US Patent 8,329,252, 2012 | 483 | 2012 |
Dislocation effect on light emission efficiency in gallium nitride SY Karpov, YN Makarov Applied Physics Letters 81 (25), 4721-4723, 2002 | 255 | 2002 |
On the sublimation growth of SiC bulk crystals: development of a numerical process model D Hofmann, M Heinze, A Winnacker, F Durst, L Kadinski, P Kaufmann, ... Journal of crystal growth 146 (1-4), 214-219, 1995 | 94 | 1995 |
Elastic and piezoelectric properties of AlN and LiAlO2 single crystals AV Sotnikov, H Schmidt, M Weihnacht, EP Smirnova, TY Chemekova, ... IEEE transactions on ultrasonics, ferroelectrics, and frequency control 57 …, 2010 | 86 | 2010 |
SiC-bulk growth by physical-vapor transport and its global modelling D Hofmann, R Eckstein, M Kölbl, Y Makarov, M St G, E Schmitt, ... Journal of crystal growth 174 (1-4), 669-674, 1997 | 71 | 1997 |
Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas AS Segal, AN Vorob'ev, SY Karpov, EN Mokhov, MG Ramm, MS Ramm, ... Journal of crystal growth 208 (1-4), 431-441, 2000 | 47 | 2000 |
Modeling analysis of temperature field and species transport inside the system for sublimation growth of SiC in tantalum container YE Egorov, AO Galyukov, SG Gurevich, Y Makarov, EN Mokhov, ... Materials Science Forum 264, 61-64, 1997 | 42 | 1997 |
Graphene on SiC substrate as biosensor: Theoretical background, preparation, and characterization AA Lebedev, SY Davydov, IA Eliseyev, AD Roenkov, O Avdeev, ... Materials 14 (3), 590, 2021 | 37 | 2021 |
Application of magnetic fields in industrial growth of silicon single crystals W Von Ammon, Y Gelfgat, L Gorbunov, A Muhlbauer, A Muiznieks, ... Gelfgat, L. Gorbunov, A. Mühlbauer, A. Muiznieks, Y. Makarov, J. Virbulis, G …, 2005 | 37 | 2005 |
Characterization of HVPE‐grown UV LED heterostructures S Kurin, A Antipov, I Barash, A Roenkov, A Usikov, H Helava, V Ratnikov, ... Physica status solidi (C) 11 (3‐4), 813-816, 2014 | 33 | 2014 |
CHVPE growth of AlGaN‐based UV LEDs S Kurin, A Antipov, I Barash, A Roenkov, H Helava, S Tarasov, ... physica status solidi c 10 (3), 289-293, 2013 | 32 | 2013 |
AlN substrates and epitaxy results H Helava, T Chemekova, O Avdeev, E Mokhov, S Nagalyuk, Y Makarov, ... physica status solidi c 7 (7‐8), 2115-2117, 2010 | 32 | 2010 |
In situ visualization of SiC physical vapor transport crystal growth P Wellmann, Z Herro, A Winnacker, R Püsche, M Hundhausen, P Masri, ... Journal of Crystal Growth 275 (1-2), e1807-e1812, 2005 | 29 | 2005 |
On the peculiarities of the short-time (tg< 10 ms) solid solution LPE growth onto the moving substrate DZ Garbuzov, EV Zhuravkevich, AI Zhmakin, YN Makarov, ... Journal of crystal growth 110 (4), 955-959, 1991 | 25 | 1991 |
Quality improvement of single crystal 4H SiC grown with a purified β-SiC powder source JG Kim, EJ Jung, Y Kim, Y Makarov, DJ Choi Ceramics International 40 (3), 3953-3959, 2014 | 23 | 2014 |
Thermal-diffusion synthesis of thick molybdenum disulphide coatings on steel substrates S Voronin, O Smorygo, P Bertrand, I Smurov, N Smirnov, Y Makarov Surface and Coatings Technology 180, 113-117, 2004 | 22 | 2004 |
Mass transport and powder source evolution in sublimation growth of SiC bulk crystals DS Karpov, OV Bord, SY Karpov, AI Zhmakin, MS Ramm, YN Makarov Materials Science Forum 353, 37-40, 2001 | 20 | 2001 |
Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique P Konkapaka, B Raghothamachar, M Dudley, Y Makarov, MG Spencer Journal of crystal growth 289 (1), 140-144, 2006 | 19 | 2006 |
Modeling of facet formation in SiC bulk crystal growth ID Matukov, DS Kalinin, MV Bogdanov, SY Karpov, DK Ofengeim, ... Journal of crystal growth 266 (1-3), 313-319, 2004 | 19 | 2004 |
Growth of low-defect SiC and AlN crystals in refractory metal crucibles HI Helava, EN Mokhov, OA Avdeev, MG Ramm, DP Litvin, AV Vasiliev, ... Materials Science Forum 740, 85-90, 2013 | 17 | 2013 |