| A charge-plasma-based dielectric-modulated junctionless TFET for biosensor label-free detection D Singh, S Pandey, K Nigam, D Sharma, DS Yadav, P Kondekar IEEE Transactions on Electron Devices 64 (1), 271-278, 2016 | 187 | 2016 |
| A new design approach of dopingless tunnel FET for enhancement of device characteristics BR Raad, S Tirkey, D Sharma, P Kondekar IEEE Transactions on Electron Devices 64 (4), 1830-1836, 2017 | 126 | 2017 |
| Design and analysis of polarity controlled electrically doped tunnel FET with bandgap engineering for analog/RF applications PN Kondekar, K Nigam, S Pandey, D Sharma IEEE Transactions on Electron Devices 64 (2), 412-418, 2016 | 114 | 2016 |
| Drain work function engineered doping-less charge plasma TFET for ambipolar suppression and RF performance improvement: a proposal, design, and investigation BR Raad, D Sharma, P Kondekar, K Nigam, DS Yadav IEEE Transactions on Electron Devices 63 (10), 3950-3957, 2016 | 109 | 2016 |
| Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement BR Raad, K Nigam, D Sharma, PN Kondekar Superlattices and Microstructures 94, 138-146, 2016 | 92 | 2016 |
| Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement B Raad, K Nigam, D Sharma, P Kondekar Electronics Letters 52 (9), 770-772, 2016 | 87 | 2016 |
| DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field effect transistor K Nigam, P Kondekar, D Sharma Superlattices and Microstructures 92, 224-231, 2016 | 69 | 2016 |
| Effect of interface trap charges on performance variation of heterogeneous gate dielectric junctionless-TFET S Gupta, K Nigam, S Pandey, D Sharma, PN Kondekar IEEE Transactions on Electron Devices 64 (11), 4731-4737, 2017 | 68 | 2017 |
| A barrier controlled charge plasma-based TFET with gate engineering for ambipolar suppression and RF/linearity performance improvement K Nigam, S Pandey, PN Kondekar, D Sharma, PK Parte IEEE Transactions on Electron Devices 64 (6), 2751-2757, 2017 | 65 | 2017 |
| A dielectrically modulated electrically doped tunnel FET for application of label free biosensor P Venkatesh, K Nigam, S Pandey, D Sharma, PN Kondekar Superlattices and Microstructures 109, 470-479, 2017 | 63 | 2017 |
| Label-free biosensor using nanogap embedded dielectric modulated schottky tunneling source impact ionization MOS S Singh, PN Kondekar, NK Jaiswal Microelectronic Engineering 149, 129-134, 2016 | 63 | 2016 |
| Impact of interface trap charges on performance of electrically doped tunnel FET with heterogeneous gate dielectric P Venkatesh, K Nigam, S Pandey, D Sharma, PN Kondekar IEEE Transactions on Device and Materials Reliability 17 (1), 245-252, 2017 | 58 | 2017 |
| Performance comparison of single and dual metal dielectrically modulated TFETs for the application of label free biosensor M Verma, D Sharma, S Pandey, K Nigam, PN Kondekar Superlattices and Microstructures 101, 219-227, 2017 | 43 | 2017 |
| A quad-band antenna for multi-band radio frequency energy harvesting circuit S Agrawal, MS Parihar, PN Kondekar AEU-International Journal of Electronics and Communications 85, 99-107, 2018 | 42 | 2018 |
| Broadband rectenna for radio frequency energy harvesting application S Agrawal, MS Parihar, PN Kondekar IETE Journal of Research 64 (3), 347-353, 2018 | 40 | 2018 |
| Dopingless super‐steep impact ionisation MOS (dopingless‐IMOS) based on work‐function engineering S Singh, PN Kondekar Electronics letters 50 (12), 888-889, 2014 | 39 | 2014 |
| Design optimization of three-stacked nanosheet FET from self-heating effects perspective S Rathore, RK Jaisawal, PN Kondekar, N Bagga IEEE Transactions on Device and Materials Reliability 22 (3), 396-402, 2022 | 37 | 2022 |
| Design and investigation of dielectric engineered dopant segregated Schottky barrier MOSFET with NiSi source/drain S Kale, PN Kondekar IEEE Transactions on Electron Devices 64 (11), 4400-4407, 2017 | 36 | 2017 |
| High frequency performance of dual metal gate vertical tunnel field effect transistor based on work function engineering K Nigam, P Kondekar, D Sharma Micro & Nano Letters 11 (6), 319-322, 2016 | 36 | 2016 |
| Ferroelectric Schottky barrier tunnel FET with gate-drain underlap: Proposal and investigation S Kale, PN Kondekar Superlattices and Microstructures 89, 225-230, 2016 | 32 | 2016 |
Dr. Sumit KaleSMIEEE, Assistant Professor, Delhi Technological University, Delhi在 dtu.ac.in 的电子邮件经过验证
