| Gate-all-around nanowire junctionless transistor-based hydrogen gas sensor S Mokkapati, N Jaiswal, M Gupta, A Kranti IEEE Sensors Journal 19 (13), 4758-4764, 2019 | 40 | 2019 |
| Negative capacitance junctionless device with mid-gap work function for low power applications M Gupta, VPH Hu IEEE Electron Device Letters 41 (3), 473-476, 2020 | 26 | 2020 |
| Steep-switching germanium junctionless MOSFET with reduced Off-state tunneling M Gupta, A Kranti IEEE Transactions on Electron Devices 64 (9), 3582-3587, 2017 | 13 | 2017 |
| Transforming gate misalignment into a unique opportunity to facilitate steep switching in junctionless nanotransistors M Gupta, A Kranti Nanotechnology 27 (45), 455204, 2016 | 12 | 2016 |
| Raised source/drain germanium junctionless MOSFET for subthermal off-to-on transition M Gupta, A Kranti IEEE Transactions on Electron Devices 65 (6), 2406-2412, 2018 | 11 | 2018 |
| Variation of threshold voltage with temperature in impact ionization-induced steep switching Si and Ge junctionless MOSFETs M Gupta, A Kranti IEEE Transactions on Electron Devices 64 (5), 2061-2066, 2017 | 11 | 2017 |
| Sidewall spacer optimization for steep switching junctionless transistors M Gupta, A Kranti Semiconductor Science and Technology 31 (6), 065017, 2016 | 10 | 2016 |
| Hysteresis free negative total gate capacitance in junctionless transistors M Gupta, A Kranti Semiconductor Science and Technology 32 (9), 095014, 2017 | 4 | 2017 |
| Germanium junctionless MOSFET with steep subthreshold swing M Gupta, A Kranti ECS Transactions 66 (5), 79, 2015 | 4 | 2015 |
| Sensitivity Analysis and Design of Negative-Capacitance Junctionless Transistor for High-Performance Applications M Gupta, VPH Hu IEEE Transactions on Electron Devices, 2021 | 3 | 2021 |
| Influence of Channel Doping on Junctionless and Negative Capacitance Junctionless Transistors M Gupta, VPH Hu ECS Journal of Solid State Science and Technology, 2021 | 3 | 2021 |
| Bi-directional junctionless transistor for logic and memory applications M Gupta, A Kranti IEEE Transactions on Electron Devices 66 (10), 4446-4452, 2019 | 3 | 2019 |
| Relevance of Device Cross Section to Overcome Boltzmann Switching Limit in 3-D Junctionless Transistor M Gupta, A Kranti IEEE Transactions on Electron Devices 66 (6), 2704-2709, 2019 | 3 | 2019 |
| Regaining Switching by Overcoming Single-Transistor Latch in Ge Junctionless MOSFETs M Gupta, A Kranti IEEE Transactions on Electron Devices 65 (9), 3600-3607, 2018 | 3 | 2018 |
| Sensitivity Analysis of Ferroelectric Junctionless Transistors for Non-volatile Memory Applications M Gupta, VPH Hu 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | 2 | 2022 |
| Hysteresis Free sub-60 mV/dec Subthreshold Swing in Junctionless MOSFETs M Gupta, A Kranti 2018 31st International Conference on VLSI Design and 2018 17th …, 2018 | 2 | 2018 |
| Junctionless Device Cross-Section: A Key Aspect for Overcoming Boltzmann Tyranny A Kranti, M Gupta ECS Transactions 97 (5), 39, 2020 | 1 | 2020 |
| Suppressing Single Transistor Latch Effect in Energy Efficient Steep Switching Junctionless MOSFETs M Gupta, A Kranti 2017 30th International Conference on VLSI Design and 2017 16th …, 2017 | 1 | 2017 |
| Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET RK Nirala, S Semwal, M Gupta, A Kranti IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Quantum Confinement Imposed Constraints in ULP Circuits with Junctionless FET S Semwal, N Rai, RK Nirala, M Gupta, A Kranti 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
