| Low dielectric constant materials for microelectronics K Maex, MR Baklanov, D Shamiryan, F Lacopi, SH Brongersma, ... Journal of Applied Physics 93 (11), 8793-8841, 2003 | 1960 | 2003 |
| Low-k dielectric materials D Shamiryan, T Abell, F Iacopi, K Maex Materials today 7 (1), 34-39, 2004 | 471 | 2004 |
| Fabrication of porogen residues free and mechanically robust low-k materials AM Urbanowicz, P Verdonck, D Shamiryan, K Vanstreels, M Baklanov, ... US Patent App. 12/831,935, 2011 | 446 | 2011 |
| Plasma processing of low-k dielectrics MR Baklanov, JF de Marneffe, D Shamiryan, AM Urbanowicz, H Shi, ... Journal of Applied Physics 113 (4), 2013 | 353 | 2013 |
| Plasma for patterning advanced gate stacks D Shamiryan, V Paraschiv, M Demand, W Boullart US Patent App. 11/544,351, 2007 | 205 | 2007 |
| Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma D Shamiryan, MR Baklanov, S Vanhaelemeersch, K Maex Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 198 | 2002 |
| F. lacopi, SH Brongersma, and ZS Yanovitskaya K Maex, MR Baklanov, D Shamiryan J. Appl. Phys 93 (11), 8793, 2003 | 146 | 2003 |
| Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 145 | 2008 |
| Characterization of Cu surface cleaning by hydrogen plasma MR Baklanov, DG Shamiryan, Z Tökei, GP Beyer, T Conard, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 116 | 2001 |
| Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening AM Urbanowicz, K Vanstreels, P Verdonck, D Shamiryan, S De Gendt, ... Journal of Applied Physics 107 (10), 2010 | 97 | 2010 |
| The removal of copper oxides by ethyl alcohol monitored in situ by spectroscopic ellipsometry A Satta, D Shamiryan, MR Baklanov, CM Whelan, QT Le, GP Beyer, ... Journal of The Electrochemical Society 150 (5), G300, 2003 | 86 | 2003 |
| 25% drive current improvement for p-type multiple gate FET (MuGFET) devices by the introduction of recessed Si/sub 0.8/Ge/sub 0.2/in the source and drain regions P Verheyen, N Collaert, R Rooyackers, R Loo, D Shamiryan, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 194-195, 2005 | 67 | 2005 |
| Effect of porogen residue on chemical, optical, and mechanical properties of CVD SiCOH low-k materials AM Urbanowicz, K Vanstreels, D Shamiryan, S De Gendt, MR Baklanov Electrochemical and Solid-State Letters 12 (8), H292, 2009 | 64 | 2009 |
| High performance 70-nm germanium pMOSFETs with boron LDD implants G Hellings, J Mitard, G Eneman, B De Jaeger, DP Brunco, D Shamiryan, ... IEEE Electron Device Letters 30 (1), 88-90, 2008 | 62 | 2008 |
| Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin films F Iacopi, Z Tőkei, QT Le, D Shamiryan, T Conard, B Brijs, U Kreissig, ... Journal of applied physics 92 (3), 1548-1554, 2002 | 61 | 2002 |
| Growth and characterization of atomic layer deposited on polymer films AM Hoyas, J Schuhmacher, D Shamiryan, J Waeterloos, W Besling, ... Journal of applied physics 95 (1), 381-388, 2004 | 55 | 2004 |
| Diffusion barrier integrity evaluation by ellipsometric porosimetry D Shamiryan, MR Baklanov, K Maex Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 55 | 2003 |
| Effects of various plasma pretreatments on 193nm photoresist and linewidth roughness after etching MC Kim, D Shamiryan, Y Jung, W Boullart, CJ Kang, HK Cho Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 53 | 2006 |
| Investigation of barrier and slurry effects on the galvanic corrosion of copper D Ernur, S Kondo, D Shamiryan, K Maex Microelectronic Engineering 64 (1-4), 117-124, 2002 | 53 | 2002 |
| Strain Enhanced nMOS Using In Situ Doped Embedded S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition … P Verheyen, V Machkaoutsan, M Bauer, D Weeks, C Kerner, F Clemente, ... IEEE Electron Device Letters 29 (11), 1206-1208, 2008 | 48 | 2008 |
Dr. Adam M. UrbanowiczApplication Tech Leader - Material Expert, NOVA在 novameasuring.com 的电子邮件经过验证
