Michael Shur 个人学术档案 - 学术资源搜索

引用次数

	总计	2019 年至今
引用	78105	18595
h 指数	122	63
i10 指数	993	446

4100

2050

1025

3075

1985198619871988198919901991199219931994199519961997199819992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024259 323 405 319 441 442 472 438 507 423 603 760 956 1059 1202 1266 1252 1626 1853 2079 2219 2342 2315 2627 2685 2784 2903 2867 3313 3257 3343 3467 3542 3598 4048 4027 3654 2919 2736 1206

开放获取的出版物数量

查看全部

63 篇文章

52 篇文章

可查看的文章

无法查看的文章

根据资助方的强制性开放获取政策

合著作者

Remis GaskaUVTON, Inc.在 uvton.com 的电子邮件经过验证
Grigory SiminUniversity of South Carolina在 engr.sc.edu 的电子邮件经过验证
Max ShatalovCVD Equipment Corporation在 cvdequipment.com 的电子邮件经过验证
Taiichi OtsujiRIEC, Tohoku University在 riec.tohoku.ac.jp 的电子邮件经过验证
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences and Technical University WARSAW POLAND在 unipress.waw.pl 的电子邮件经过验证
Maxim RyzhiiS. Associate Professor, University of Aizu在 u-aizu.ac.jp 的电子邮件经过验证
Nezih PalaElectrical & Computer Engineering, Florida International University在 fiu.edu 的电子邮件经过验证
Vladimir MitinSUNY Distinguished Professor, University at Buffalo在 buffalo.edu 的电子邮件经过验证
Kwyro LeeProfessor of Electrical Engineering, KAIST在 kaist.ac.kr 的电子邮件经过验证
Alexander A. BalandinDistinguished Professor of Materials Science and Engineering, UCLA在 seas.ucla.edu 的电子邮件经过验证
Vyacheslav PopovKotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)在 soire.renet.ru 的电子邮件经过验证
Dmitry VekslerHRL Laboratory在 hrl.com 的电子邮件经过验证
Qhalid FareedTexas Instruments在 ti.com 的电子邮件经过验证
Guanxiong LiuUniversity of California Riverside在 ee.ucr.edu 的电子邮件经过验证
M.I. DyakonovLaboratoire Charles Coulomb (L2C), Université Montpellier -CNRS在 umontpellier.fr 的电子邮件经过验证
Juras MickeviciusVilnius University在 ff.vu.lt 的电子邮件经过验证
Frédéric TeppeDirector of research - CNRS - Laboratoire Charles Coulomb在 umontpellier.fr 的电子邮件经过验证
Mikhail GaevskiCVD Equipment Corporation在 CVDEquipment.com 的电子邮件经过验证
Hadis MorkoçVirginia Commonwealth University在 vcu.edu 的电子邮件经过验证
Jimmy XuCharles C. Tillinghast Jr. 1932 University Professor of Engineering and Physics, Brown University在 Brown.edu 的电子邮件经过验证

关注

Michael Shur

Patricia W. and C. Sheldon Roberts Professor, Rensselaer Polytechnic

在 rpi.edu 的电子邮件经过验证 - 首页

semiconductors


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe ME Levinshtein, SL Rumyantsev, MS Shur John Wiley & Sons, 2001	2183	2001
Handbook series on semiconductor parameters M Levinshtein World Scientific, 1997	2049*	1997
Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current M Dyakonov, M Shur Physical review letters 71 (15), 2465, 1993	1458	1993
Physics of semiconductor devices M Shur, J Singh Physics Today 43 (10), 98-99, 1990	1338	1990
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid M Dyakonov, M Shur IEEE transactions on electron devices 43 (3), 380-387, 1996	1247	1996
GaAs devices and circuits MS Shur Springer Science & Business Media, 2013	1033	2013
Introduction to solid-state lighting A Žukauskas, M Shur, R Gaska (No Title), 2002	983	2002
Threshold switching in chalcogenide‐glass thin films D Adler, MS Shur, M Silver, SR Ovshinsky Journal of Applied Physics 51 (6), 3289-3309, 1980	827	1980
Transient electron transport in wurtzite GaN, InN, and AlN BE Foutz, SK O’Leary, MS Shur, LF Eastman Journal of applied physics 85 (11), 7727-7734, 1999	711	1999
Sensitive skin V Lumelsky, MS Shur, S Wagner, M Ding World Scientific, 2000	680	2000
Solid-state lighting: toward superior illumination MS Shur, R Zukauskas Proceedings of the IEEE 93 (10), 1691-1703, 2005	620	2005
Physics of amorphous silicon based alloy field‐effect transistors M Shur, M Hack Journal of Applied Physics 55 (10), 3831-3842, 1984	589	1984
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond Proceedings of the IEEE 79 (5), 677-701, 1991	583	1991
An experimental study of contact effects in organic thin film transistors DJ Gundlach, L Zhou, JA Nichols, TN Jackson, PV Necliudov, MS Shur Journal of Applied Physics 100 (2), 2006	561	2006
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur Applied Physics Letters 65 (9), 1121-1123, 1994	541	1994
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	528	2012
Plasma wave electronics: novel terahertz devices using two dimensional electron fluid MI Dyakonov, MS Shur IEEE Transactions on Electron Devices 43 (10), 1640-1645, 1996	504	1996
Nonresonant detection of terahertz radiation in field effect transistors W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ... Journal of Applied Physics 91 (11), 9346-9353, 2002	497	2002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur IEEE Electron Device Letters 21 (2), 63-65, 2000	477	2000
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN UV Bhapkar, MS Shur Journal of Applied Physics 82 (4), 1649-1655, 1997	476	1997

系统目前无法执行此操作，请稍后再试。

文章 1–20

每年引用数

重复的引用

合并的引用

添加合著者合著作者

上传 PDF

关注此作者

引用次数

合著作者

引用