| Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 μm AV Babichev, AG Gladyshev, AV Filimonov, VN Nevedomskii, ... Technical Physics Letters 43, 666-669, 2017 | 46 | 2017 |
| High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range AV Babichev, VV Dudelev, AG Gladyshev, DA Mikhailov, AS Kurochkin, ... Technical Physics Letters 45, 735-738, 2019 | 32 | 2019 |
| Room temperature lasing of multi-stage quantum-cascade lasers at 8 μm wavelength AV Babichev, AG Gladyshev, AS Kurochkin, ES Kolodeznyi, ... Semiconductors 52, 1082-1085, 2018 | 28 | 2018 |
| Room temperature lasing of single-mode arched-cavity quantum-cascade lasers AV Babichev, AG Gladyshev, AS Kurochkin, VV Dudelev, ES Kolodeznyi, ... Technical Physics Letters 45, 398-400, 2019 | 25 | 2019 |
| Heterostructures of single-wavelength and dual-wavelength quantum-cascade lasers AV Babichev, AS Kurochkin, EC Kolodeznyi, AV Filimonov, AA Usikova, ... Semiconductors 52, 745-749, 2018 | 23 | 2018 |
| Single-mode high-speed 1550 nm wafer fused VCSELs for narrow WDM systems A Babichev, S Blokhin, A Gladyshev, L Karachinsky, I Novikov, A Blokhin, ... IEEE Photonics Technology Letters 35 (6), 297-300, 2023 | 19 | 2023 |
| Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice LY Karachinsky, II Novikov, AV Babichev, AG Gladyshev, ES Kolodeznyi, ... Optics and Spectroscopy 127, 1053-1056, 2019 | 19 | 2019 |
| Thermal analysis of phosphor containing silicone layer in high power LEDs ES Kolodeznyi, IN Ivukin, VS Serebryakova, VE Bougrov, AE Romanov Materials Physics and Mechanics 21 (3), 283-287, 2014 | 18 | 2014 |
| Long-wavelength VCSELs: status and prospects A Babichev, S Blokhin, E Kolodeznyi, L Karachinsky, I Novikov, A Egorov, ... Photonics 10 (3), 268, 2023 | 17 | 2023 |
| Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band SA Blokhin, MA Bobrov, NA Maleev, JN Donges, L Bremer, AA Blokhin, ... Optics express 29 (5), 6582-6598, 2021 | 17 | 2021 |
| Одночастотная генерация арочных квантово-каскадных лазеров при комнатной температуре АВ Бабичев, АГ Гладышев, АС Курочкин, ВВ Дюделев, ЕС Колодезный, ... Письма в Журнал технической физики 45 (8), 31-33, 2019 | 12 | 2019 |
| Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm AV Babichev, AS Kurochkin, ES Kolodeznyi, AG Gladyshev, II Novikov, ... Mater. Phys. Mech 24, 284-288, 2015 | 12 | 2015 |
| Spectral characteristics of half-ring quantum-cascade lasers AV Babichev, DA Pashnev, AG Gladyshev, AS Kurochkin, ES Kolodeznyi, ... Optics and Spectroscopy 128, 1187-1192, 2020 | 11 | 2020 |
| Analysis of the internal optical losses of the vertical-cavity surface-emitting laser of the spectral range of 1.55 µm formed by a plate sintering technique SA Blokhin, MA Bobrov, AA Blokhin, AG Kuzmenkov, NA Maleev, ... Optics and Spectroscopy 127, 140-144, 2019 | 11 | 2019 |
| Growth and optical characterization of 7.5 μm quantum-cascade laser heterostructures grown by MBE AV Babichev, AG Gladyshev, ES Kolodeznyi, AS Kurochkin, ... Journal of Physics: Conference Series 1124 (4), 041029, 2018 | 11 | 2018 |
| Optical gain of 1550-nm range multiple-quantum-well heterostructures and limiting modulation frequencies of vertical-cavity surface-emitting lasers based on them ES Kolodeznyi, SS Rochas, AS Kurochkin, AV Babichev, II Novikov, ... Optics and Spectroscopy 125, 238-242, 2018 | 11 | 2018 |
| On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm II Novikov, LY Karachinsky, ES Kolodeznyi, VE Bougrov, AS Kurochkin, ... Semiconductors 50, 1412-1415, 2016 | 11 | 2016 |
| Influence of output optical losses on the dynamic characteristics of 1.55-μm wafer-fused vertical-cavity surface-emitting lasers SA Blokhin, MA Bobrov, AA Blokhin, AG Kuzmenkov, NA Maleev, ... Semiconductors 53, 1104-1109, 2019 | 10 | 2019 |
| Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors MA Rozhkov, ES Kolodeznyi, AM Smirnov, VE Bougrov, AE Romanov Materials Physics and Mechanics 24 (2), 194-200, 2015 | 9 | 2015 |
| High-speed 1.3-1.55 um InGaAs/InP PIN photodetector for microwave photonics OA Kozyreva, YV Solov’Ev, IS Polukhin, AK Mikhailov, GA Mikhailovskiy, ... Journal of Physics: Conference Series 917 (5), 052029, 2017 | 8 | 2017 |
Innokenty NovikovConnector Optics LLC, ITMO University, Ioffe Physical-Technical Institute在 switch.ioffe.ru 的电子邮件经过验证
