| Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique A Kinoshita, Y Tsuchiya, A Yagishita, K Uchida, J Koga Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 168-169, 2004 | 401 | 2004 |
| High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions A Kinoshita, C Tanaka, K Uchida, J Koga Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 158-159, 2005 | 325 | 2005 |
| Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm K Uchida, H Watanabe, A Kinoshita, J Koga, T Numata, S Takagi Digest. International Electron Devices Meeting,, 47-50, 2002 | 316 | 2002 |
| Comprehensive study on injection velocity enhancement in dopant-segregated Schottky MOSFETs A Kinoshita, T Kinoshita, Y Nishi, K Uchida, S Toriyama, R Hasumi, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 255 | 2006 |
| Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime K Uchida, T Krishnamohan, KC Saraswat, Y Nishi IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 239 | 2005 |
| Nonvolatile Si quantum memory with self-aligned doubly-stacked dots R Ohba, N Sugiyama, K Uchida, J Koga, A Toriumi IEEE Transactions on Electron Devices 49 (8), 1392-1398, 2002 | 189 | 2002 |
| Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors K Uchida, S Takagi Applied Physics Letters 82 (17), 2916-2918, 2003 | 188 | 2003 |
| High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: Experiments T Krishnamohan, Z Krivokapic, K Uchida, Y Nishi, KC Saraswat IEEE Transactions on Electron Devices 53 (5), 990-999, 2006 | 170 | 2006 |
| Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits KUK Uchida, KMK Matsuzawa, JKJ Koga, ROR Ohba, STS Takagi, ... Japanese Journal of Applied Physics 39 (4S), 2321, 2000 | 162 | 2000 |
| A unified simulation of Schottky and ohmic contacts K Matsuzawa, K Uchida, A Nishiyama IEEE Transactions on Electron Devices 47 (1), 103-108, 2000 | 160 | 2000 |
| Programmable single-electron transistor logic for future low-power intelligent LSI: proposal and room-temperature operation K Uchida, J Koga, R Ohba, A Toriumi IEEE Transactions on Electron Devices 50 (7), 1623-1630, 2003 | 155 | 2003 |
| Experimental study on carrier transport mechanisms in double-and single-gate ultrathin-body MOSFETs-Coulomb scattering, volume inversion, and/spl delta/T/sub SOI/-induced … K Uchida, J Koga, S Takagi IEEE International Electron Devices Meeting 2003, 33.5. 1-33.5. 4, 2003 | 143 | 2003 |
| Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs K Uchida, R Zednik, CH Lu, H Jagannathan, J McVittie, PC McIntyre, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 110 | 2004 |
| Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs K Uchida, J Koga, R Ohba, T Numata, SI Takagi International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 110 | 2001 |
| Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors K Uchida, J Koga, S Takagi Journal of Applied Physics 102 (7), 2007 | 106 | 2007 |
| Sub-band structure engineering for advanced CMOS channels S Takagi, T Mizuno, T Tezuka, N Sugiyama, S Nakaharai, T Numata, ... Solid-State Electronics 49 (5), 684-694, 2005 | 100 | 2005 |
| Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots G Yamahata, T Kodera, HOH Churchill, K Uchida, CM Marcus, S Oda Physical Review B—Condensed Matter and Materials Physics 86 (11), 115322, 2012 | 79 | 2012 |
| Nanoscale Thermal Management of Single SnO2 Nanowire: pico-Joule Energy Consumed Molecule Sensor G Meng, F Zhuge, K Nagashima, A Nakao, M Kanai, Y He, M Boudot, ... ACS sensors 1 (8), 997-1002, 2016 | 74 | 2016 |
| Semiconductor device and manufacturing method of same M Saitoh, K Uchida US Patent 8,076,231, 2011 | 68 | 2011 |
| Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors K Uchida, K Matsuzawa, J Koga, S Takagi, A Toriumi Applied Physics Letters 76 (26), 3992-3994, 2000 | 68 | 2000 |
