| Direct extraction of semiconductor device parameters using lateral optimization method A Ortiz-Conde, Y Ma, J Thomson, E Santos, JJ Liou, FJG Sánchez, M Lei, ... Solid-State Electronics 43 (4), 845-848, 1999 | 84 | 1999 |
| Vertical replacement-gate junction field-effect transistor S Chaudhry, PA Layman, JR McMacken, R Thomson, JQ Zhao US Patent 7,033,877, 2006 | 74 | 2006 |
| Electronic fingerprinting of semiconductor integrated circuits PA Layman, S Chaudhry, JG Norman, JR Thomson US Patent 6,738,294, 2004 | 69 | 2004 |
| Development of robust interconnect model based on design of experiments and multiobjective optimization Q Zhang, JJ Liou, J McMacken, J Thomson, P Layman IEEE Transactions on Electron Devices 48 (9), 1885-1891, 2001 | 69 | 2001 |
| Magnetic ordering in the three-dimensional frustrated Heisenberg model JR Thomson, H Guo, DH Ryan, MJ Zuckermann, M Grant Physical Review B 45 (6), 3129, 1992 | 60 | 1992 |
| Bipolar junction transistor compatible with vertical replacement gate transistor S Chaudhry, PA Layman, JR McMacken, R Thomson, JQ Zhao US Patent 6,759,730, 2004 | 52 | 2004 |
| Method for defining the initial state of static random access memory PA Layman, S Chaudhry, JG Norman, JR Thomson US Patent 6,906,962, 2005 | 46 | 2005 |
| Vertical replacement-gate junction field-effect transistor S Chaudhry, PA Layman, JR McMacken, R Thomson, JQ Zhao US Patent 6,690,040, 2004 | 38 | 2004 |
| Multiple operating voltage vertical replacement-gate (VRG) transistor PA Layman, JR McMacken, JR Thomson, S Chaudhry, JQ Zhao US Patent 6,686,604, 2004 | 37 | 2004 |
| SPICE modeling and quick estimation of MOSFET mismatch based on BSIM3 model and parametric tests Q Zhang, JJ Liou, JR McMacken, J Thomson, P Layman IEEE Journal of Solid-State Circuits 36 (10), 1592-1595, 2001 | 37 | 2001 |
| Multi-layer inductor formed in a semiconductor substrate S Chaudhry, PA Layman, JR Thomson, M Laradji, MD Griglione US Patent 6,639,298, 2003 | 34 | 2003 |
| Coarsening of solid-liquid mixtures in a random acceleration field JR Thomson, J Casademunt, F Drolet, J Vinals Physics of Fluids 9 (5), 1336-1343, 1997 | 29 | 1997 |
| Vertical replacement-gate silicon-on-insulator transistor S Chaudhry, PA Layman, JR McMacken, JR Thomson, JQ Zhao US Patent 7,259,048, 2007 | 26 | 2007 |
| Experimental demonstration of a 1.2 kV trench clustered insulated gate bipolar transistor in non punch through technology K Vershinin, M Sweet, L Ngwendson, J Thomson, P Waind, J Bruce, ... 2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006 | 22 | 2006 |
| Simulations of quantum circuits with approximate noise using qsim and cirq SV Isakov, D Kafri, O Martin, CV Heidweiller, W Mruczkiewicz, ... arXiv preprint arXiv:2111.02396, 2021 | 21 | 2021 |
| Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material MD Griglione, PA Layman, M Laradji, JR Thomson, S Chaudhry US Patent 7,132,297, 2006 | 21 | 2006 |
| Apparatus and method for detecting alpha particles PA Layman, S Chaudhry, JG Norman, JR Thomson US Patent 6,828,561, 2004 | 21 | 2004 |
| Vertical replacement-gate junction field-effect transistor S Chaudhry, P Layman, J McMacken, R Thomson, J Zhao US Patent App. 11/390,015, 2006 | 19 | 2006 |
| Cavity flow induced by a fluctuating acceleration field JR Thomson, J Casademunt, J Viñals Physics of Fluids 7 (2), 292-301, 1995 | 19 | 1995 |
| The impact of satellite trails on Hubble Space Telescope observations S Kruk, P García-Martín, M Popescu, B Aussel, S Dillmann, ME Perks, ... Nature Astronomy 7 (3), 262-268, 2023 | 18 | 2023 |
Martin GrantPhysics Department, McGill University在 mcgill.ca 的电子邮件经过验证
