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Joel T. Asubar
Joel T. Asubar
Associate Professor, University of Fukui, IEEE senior member
在 u-fukui.ac.jp 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Insulated gate and surface passivation structures for GaN-based power transistors
Z Yatabe, JT Asubar, T Hashizume
Journal of Physics D: Applied Physics 49 (39), 393001, 2016
2262016
AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation
M Kuzuhara, JT Asubar, H Tokuda
Japanese Journal of Applied Physics 55 (7), 070101, 2016
1302016
Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
S Kaneki, J Ohira, S Toiya, Z Yatabe, JT Asubar, T Hashizume
Applied physics letters 109 (16), 2016
962016
Current stability in multi-mesa-channel AlGaN/GaN HEMTs
K Ohi, JT Asubar, K Nishiguchi, T Hashizume
IEEE transactions on electron devices 60 (10), 2997-3004, 2013
912013
Characterization of electronic states at insulator/(Al) GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors
Z Yatabe, Y Hori, WC Ma, JT Asubar, M Akazawa, T Sato, T Hashizume
Japanese Journal of Applied Physics 53 (10), 100213, 2014
872014
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
JT Asubar, Z Yatabe, D Gregusova, T Hashizume
Journal of Applied Physics 129 (12), 2021
752021
MBE growth of Mn-doped ZnSnAs2 thin films
JT Asubar, Y Jinbo, N Uchitomi
Journal of crystal growth 311 (3), 929-932, 2009
602009
Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier
JT Asubar, S Kawabata, H Tokuda, A Yamamoto, M Kuzuhara
IEEE Electron Device Letters 41 (5), 693-696, 2020
552020
Large as sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography
K Hayashi, N Uchitomi, K Yamagami, A Suzuki, H Yoshizawa, JT Asubar, ...
Journal of Applied Physics 119 (12), 2016
492016
Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors
JT Asubar, Z Yatabe, T Hashizume
Applied Physics Letters 105 (5), 2014
362014
Current collapse reduction in AlGaN/GaN HEMTs by high-pressure water vapor annealing
JT Asubar, Y Kobayashi, K Yoshitsugu, Z Yatabe, H Tokuda, M Horita, ...
IEEE Transactions on Electron Devices 62 (8), 2423-2428, 2015
332015
MBE growth of Mn-doped Zn–Sn–As compounds on (0 0 1) InP substrates
JT Asubar, A Kato, T Kambayashi, S Nakamura, Y Jinbo, N Uchitomi
Journal of crystal growth 301, 656-661, 2007
262007
AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5× 1010 achieved by ozone pretreatment and using ozone oxidant …
H Tokuda, JT Asubar, M Kuzuhara
Japanese Journal of Applied Physics 55 (12), 120305, 2016
242016
Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors
JT Asubar, Y Sakaida, S Yoshida, Z Yatabe, H Tokuda, T Hashizume, ...
Applied Physics Express 8 (11), 111001, 2015
232015
Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces
Z Yatabe, JT Asubar, T Sato, T Hashizume
physica status solidi (a) 212 (5), 1075-1080, 2015
222015
Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current
H Oomae, JT Asubar, S Nakamura, Y Jinbo, N Uchitomi
Journal of crystal growth 338 (1), 129-133, 2012
222012
Electrotransport properties of p-ZnSnAs2 thin films grown by molecular beam epitaxy on semi-insulating (001) InP substrates
JT Asubar, A Kato, Y Jinbo, N Uchitomi
Japanese journal of applied physics 47 (1S), 657, 2008
222008
Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures
JT Asubar, S Yoshida, H Tokuda, M Kuzuhara
Japanese Journal of Applied Physics 55 (4S), 04EG07, 2016
212016
Three dimensional local structure analysis of ZnSnAs2: Mn by X-ray fluorescence holography
K Hayashi, N Uchitomi, JT Asubar, N Happo, W Hu, S Hosokawa, ...
Japanese journal of applied physics 50 (1S2), 01BF05, 2011
172011
Impurity band conduction and negative magnetoresistance in p‐ZnSnAs2 thin films
JT Asubar, Y Jinbo, N Uchitomi
physica status solidi c 6 (5), 1158-1161, 2009
172009
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