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Nan Gao
Nan Gao
在 mail.dlut.edu.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
MXene nanoribbons as electrocatalysts for the hydrogen evolution reaction with fast kinetics
X Yang, N Gao, S Zhou, J Zhao
Physical Chemistry Chemical Physics 20 (29), 19390-19397, 2018
892018
Cooperative electron–phonon coupling and buckled structure in germanene on Au (111)
J Zhuang, N Gao, Z Li, X Xu, J Wang, J Zhao, SX Dou, Y Du
ACS nano 11 (4), 3553-3559, 2017
892017
Structures and Magnetic Properties of MoS2 Grain Boundaries with Antisite Defects
N Gao, Y Guo, S Zhou, Y Bai, J Zhao
The Journal of Physical Chemistry C 121 (22), 12261-12269, 2017
772017
Direct synthesis and in situ characterization of monolayer parallelogrammic rhenium diselenide on gold foil
S Jiang, M Hong, W Wei, L Zhao, N Zhang, Z Zhang, P Yang, N Gao, ...
Communications Chemistry 1 (1), 17, 2018
712018
Structure and stability of bilayer borophene: The roles of hexagonal holes and interlayer bonding
N Gao, X Wu, X Jiang, Y Bai, J Zhao
FlatChem 7, 48-54, 2018
662018
Initial growth mechanism of blue phosphorene on Au (111) surface
N Han, N Gao, J Zhao
The Journal of Physical Chemistry C 121 (33), 17893-17899, 2017
572017
Boron clusters with 46, 48, and 50 atoms: competition among the core–shell, bilayer and quasi-planar structures
L Sai, X Wu, N Gao, J Zhao, RB King
Nanoscale 9 (37), 13905-13909, 2017
472017
Selecting electrode materials for monolayer ReS 2 with an Ohmic contact
N Gao, S Zhou, N Liu, Y Bai, J Zhao
Journal of Materials Chemistry C 6 (25), 6764-6770, 2018
372018
Identifying the non-identical outermost selenium atoms and invariable band gaps across the grain boundary of anisotropic rhenium diselenide
M Hong, X Zhou, N Gao, S Jiang, C Xie, L Zhao, Y Gao, Z Zhang, P Yang, ...
ACS nano 12 (10), 10095-10103, 2018
322018
Realization of strained stanene by interface engineering
Y Liu, N Gao, J Zhuang, C Liu, J Wang, W Hao, SX Dou, J Zhao, Y Du
The Journal of Physical Chemistry Letters 10 (7), 1558-1565, 2019
292019
Interaction between post-graphene group-iv honeycomb monolayers and metal substrates: Implication for synthesis and structure control
N Gao, H Liu, S Zhou, Y Bai, J Zhao
The Journal of Physical Chemistry C 121 (9), 5123-5129, 2017
242017
Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect
N Liu, S Zhou, N Gao, J Zhao
Physical Chemistry Chemical Physics 20 (33), 21732-21738, 2018
212018
Monolayered semiconducting GeAsSe and SnSbTe with ultrahigh hole mobility
Y Guo, N Gao, Y Bai, J Zhao, XC Zeng
Frontiers of Physics 13, 1-9, 2018
132018
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