| Modeling the threshold voltage of core-and-outer gates of ultra-thin nanotube Junctionless-double gate-all-around (NJL-DGAA) MOSFETs N Kumar, V Purwar, H Awasthi, R Gupta, K Singh, S Dubey Microelectronics Journal 113, 105104, 2021 | 26 | 2021 |
| Impact of temperature on analog/RF performance of dielectric pocket gate-all-around (DPGAA) MOSFETs H Awasthi, N Kumar, V Purwar, R Gupta, S Dubey Silicon 13 (7), 2071-2075, 2021 | 16 | 2021 |
| Flexible paper and cloth substrates with conductive laser induced graphene traces for electroanalytical sensing, energy harvesting and supercapacitor applications H Awasthi, H Renuka, MD Wagh, A Kothuru, AK Srivastava, S Goel IEEE Sensors Journal 23 (20), 24078-24085, 2022 | 13 | 2022 |
| Impact of temperature variation on analog, hot-carrier injection and linearity parameters of nanotube junctionless double-gate-all-around (NJL-DGAA) MOSFETs N Kumar, H Awasthi, V Purwar, A Gupta, S Dubey Silicon 14 (6), 2679-2686, 2022 | 13 | 2022 |
| A novel approach to model threshold voltage and subthreshold current of graded-doped junctionless-gate-all-around (GD-JL-GAA) MOSFETs V Gupta, H Awasthi, N Kumar, AK Pandey, A Gupta Silicon, 1-9, 2021 | 13 | 2021 |
| Capacitive mode vapor sensing phenomenon in ZnO homojunction: An insight through space charge model and electrical equivalent circuit I Sil, B Chakraborty, K Dutta, H Awasthi, S Goel, P Bhattacharyya IEEE Sensors Journal 22 (10), 9483-9490, 2022 | 9 | 2022 |
| Investigating linearity and effect of temperature variation on analog/RF performance of dielectric pocket high-k double gate-all-around (DP-DGAA) MOSFETs V Purwar, R Gupta, N Kumar, H Awasthi, VK Dixit, K Singh, S Dubey, ... Applied Physics A 126, 1-8, 2020 | 9 | 2020 |
| Laser‐induced graphene‐based flexible interdigital electrode realizing micro supercapacitor sustainable in different temperatures H Awasthi, H Renuka, AK Srivastava, S Goel Energy Storage 5 (3), e405, 2023 | 8 | 2023 |
| Temperature-dependent analytical modeling of graded-channel gate-all-around (GC-GAA) junctionless field-effect transistors (JLFETs) V Gupta, N Kumar, H Awasthi, S Rai, AK Pandey, A Gupta Journal of Electronic Materials 50, 3686-3691, 2021 | 5 | 2021 |
| An analysis of Si-tube based double-material double gate-all-around (DMDGAA) MOSFEts. ICE3.(2020) N Kumar, H Awasthi, V Purwar, A Gupta, A Gupta | 5 | 2020 |
| Impact of Different Gate Dielectric Materials on Analog/RF Performance of Dielectric-Pocket Double Gate-All-Around (DP − DGAA) MOSFETs V Purwar, R Gupta, H Awasthi, S Dubey Silicon 14 (15), 9361-9366, 2022 | 4 | 2022 |
| Modeling of threshold voltage and subthreshold current of junctionless channel-modulated dual-material double-gate (JL-CM-DMDG) MOSFETs H Awasthi, V Purwar, A Gupta Silicon 14 (10), 5495-5502, 2022 | 3 | 2022 |
| An analysis of Si-tube based double-material double gate-all-around (DMDGAA) MOSFETs N Kumar, H Awasthi, V Purwar, A Gupta, A Gupta 2020 International Conference on Electrical and Electronics Engineering …, 2020 | 2 | 2020 |
| IoT enabled carbon cloth-based 3D printed hydrogen fuel cell integrated with supercapacitor for low-power microelectronic devices S Vanmathi, H Awasthi, A Pal, S Goel Scientific Reports 14 (1), 16953, 2024 | | 2024 |
| Boron Doped Laser-Induced Graphene: A Suitable Substrate for Flexible and Wearable sensor and supercapacitor H Awasthi, P Rao, T Thundat, S Goel IEEE Sensors Letters, 2024 | | 2024 |
| Shellac-mediated laser-induced reduced graphene oxide film on paper and fabric: exceptional performance in flexible fuel cell, supercapacitor and electrocardiography applications PS Kumar, S Vanmathi, H Awasthi, I Khan, RK Singh, VK Sharma, ... Materials Advances 5 (14), 5932-5944, 2024 | | 2024 |
| In-situ Growth of the Co3O4 Laser Induced Graphene for Flexible Electronics Application H Awasthi, V Thakur, T Thundat, S Goel 2023 16th International Conference on Sensing Technology (ICST), 1-5, 2023 | | 2023 |
| Performance Enhancement of SiGe-Based Junctionless Tri-Gate (JL-TG) FinFETs Using Hetero-High-K Gate Oxide Material H Awasthi, D Sigroha, V Varshney, MK Rai, S Rai, A Gupta Advances in VLSI, Communication, and Signal Processing: Select Proceedings …, 2022 | | 2022 |
| Comparative Study of Silicon and In0.53Ga0.47As-Based Gate-All-Around (GAA) MOSFETs H Awasthi, N Kumar, V Purwar, A Gupta, V Varshney, S Rai Recent Trends in Electronics and Communication: Select Proceedings of VCAS …, 2022 | | 2022 |
| Comparative Study of Silicon and Gate-All-Around In0. 53Ga0. 47 As-Based (GAA) MOSFETs H Awasthi, N Kumar, V Purwar, A Gupta, V Varshney, S Rai Recent Trends in Electronics and Communication: Select Proceedings of VCAS …, 2021 | | 2021 |
Dr. Vaibhav PurwarAssociate Professor, Pranveer Singh Institute of Technology,Kanpur在 psit.ac.in 的电子邮件经过验证
