| Regimes of GaAs quantum dot self-assembly by droplet epitaxy C Heyn, A Stemmann, A Schramm, H Welsch, W Hansen, Á Nemcsics Physical Review B—Condensed Matter and Materials Physics 76 (7), 075317, 2007 | 161 | 2007 |
| Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography J Tommila, V Polojärvi, A Aho, A Tukiainen, J Viheriälä, J Salmi, ... Solar Energy Materials and Solar Cells 94 (10), 1845-1848, 2010 | 102 | 2010 |
| Lithographically defined metal-semiconductor-hybrid nanoscrolls O Schumacher, S Mendach, H Welsch, A Schramm, C Heyn, W Hansen Applied Physics Letters 86 (14), 2005 | 72 | 2005 |
| Superior radiation tolerance of thin epitaxial silicon detectors G Kramberger, D Contarato, E Fretwurst, F Hönniger, G Lindström, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2003 | 72 | 2003 |
| Variation of lattice constant and cluster formation in GaAsBi J Puustinen, M Wu, E Luna, A Schramm, P Laukkanen, M Laitinen, ... Journal of Applied Physics 114 (24), 2013 | 68 | 2013 |
| Faceting during GaAs quantum dot self-assembly by droplet epitaxy C Heyn, A Stemmann, A Schramm, H Welsch, W Hansen, Á Nemcsics Applied Physics Letters 90 (20), 2007 | 62 | 2007 |
| Tunneling emission from self-assembled InAs quantum dots probed with capacitance transients S Schulz, A Schramm, C Heyn, W Hansen Physical Review B—Condensed Matter and Materials Physics 74 (3), 033311, 2006 | 48 | 2006 |
| Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells V Polojärvi, A Aho, A Tukiainen, M Raappana, T Aho, A Schramm, ... Solar Energy Materials and Solar Cells 149, 213-220, 2016 | 46 | 2016 |
| Lithography-free oxide patterns as templates for self-catalyzed growth of highly uniform GaAs nanowires on Si (111) TV Hakkarainen, A Schramm, J Mäkelä, P Laukkanen, M Guina Nanotechnology 26 (27), 275301, 2015 | 45 | 2015 |
| Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dots J Tommila, A Tukiainen, J Viheriälä, A Schramm, T Hakkarainen, A Aho, ... Journal of Crystal Growth 323 (1), 183-186, 2011 | 44 | 2011 |
| The RHEED tracking of the droplet epitaxial grown quantum dot and ring structures Á Nemcsics, C Heyn, A Stemmann, A Schramm, H Welsch, W Hansen Materials Science and Engineering: B 165 (1-2), 118-121, 2009 | 44 | 2009 |
| Correlation effects in wave function mapping of molecular beam epitaxy grown quantum dots G Maruccio, M Janson, A Schramm, C Meyer, T Matsui, C Heyn, ... Nano letters 7 (9), 2701-2706, 2007 | 36 | 2007 |
| Radiation tolerance of epitaxial silicon detectors at very large proton fluences G Lindström, E Fretwurst, F Hönniger, G Kramberger, M Möller-Ivens, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006 | 36 | 2006 |
| The hybrid operating room: Home of high-end intraoperative imaging F Gebhard, C Riepl, P Richter, A Liebold, H Gorki, R Wirtz, R König, ... Der Unfallchirurg 115, 107-120, 2012 | 35 | 2012 |
| Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy A Schramm, J Tommila, C Strelow, TV Hakkarainen, A Tukiainen, ... Nanotechnology 23 (17), 175701, 2012 | 32 | 2012 |
| Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations TV Hakkarainen, J Tommila, A Schramm, A Tukiainen, R Ahorinta, ... Applied Physics Letters 97 (17), 2010 | 27 | 2010 |
| Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits J Tommila, A Schramm, TV Hakkarainen, M Dumitrescu, M Guina Nanotechnology 24 (23), 235204, 2013 | 26 | 2013 |
| Composition of the “GaAs” quantum dot, grown by droplet epitaxy Á Nemcsics, L Tóth, L Dobos, C Heyn, A Stemmann, A Schramm, ... Superlattices and Microstructures 48 (4), 351-357, 2010 | 24 | 2010 |
| Photoinduced hole transfer in QD–phthalocyanine hybrids LD Arvani M, Virkki K, Abou-Chahine F, Efimov A, Schramm A, Tkachenko NV Physical Chemistry Chemical Physics 18 (39), 27414-27421, 2016 | 22 | 2016 |
| Resonant Raman Transitions into Singlet and Triplet States in InGaAs Quantum Dots<? format?> Containing Two Electrons T Köppen, D Franz, A Schramm, C Heyn, D Heitmann, T Kipp Physical review letters 103 (3), 037402, 2009 | 21 | 2009 |
