| Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma KN Tapily US Patent 10,062,564, 2018 | 368 | 2018 |
| Critical Role of Interlayer in Hf0.5Zr0.5O2Ferroelectric FET Nonvolatile Memory Performance K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ... IEEE Transactions on Electron Devices 65 (6), 2461-2469, 2018 | 333 | 2018 |
| Methods for SiO2 filling of fine recessed features and selective SiO2 deposition on catalytic surfaces KN Tapily US Patent 10,049,913, 2018 | 310 | 2018 |
| Perspective: New process technologies required for future devices and scaling R Clark, K Tapily, KH Yu, T Hakamata, S Consiglio, D O’meara, C Wajda, ... Apl Materials 6 (5), 2018 | 180 | 2018 |
| Nanoindentation investigation of HfO2 and Al2O3 films grown by atomic layer deposition K Tapily, JE Jakes, DS Stone, P Shrestha, D Gu, H Baumgart, ... Journal of The Electrochemical Society 155 (7), H545, 2008 | 127 | 2008 |
| Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack P Sharma, K Tapily, AK Saha, J Zhang, A Shaughnessy, A Aziz, ... 2017 Symposium on VLSI Technology, T154-T155, 2017 | 87 | 2017 |
| Extension region for a semiconductor device K Tapily, J Smith, N Mohanty, AJ Devilliers US Patent 10,529,830, 2020 | 70 | 2020 |
| A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devices N Loubet, S Kal, C Alix, S Pancharatnam, H Zhou, C Durfee, M Belyansky, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2019 | 69 | 2019 |
| Semiconductor apparatus having stacked gates and method of manufacture thereof J Smith, AJ Devilliers, KN Tapily, S Kal, GJ Leusink US Patent 10,833,078, 2020 | 60 | 2020 |
| Buried power rails J Smith, AJ Devilliers, K Tapily US Patent 10,586,765, 2020 | 58 | 2020 |
| Mechanical and structural characterization of atomic layer deposition-based ZnO films K Tapily, D Gu, H Baumgart, G Namkoong, D Stegall, AA Elmustafa Semiconductor science and technology 26 (11), 115005, 2011 | 49 | 2011 |
| Precise control of highly ordered arrays of nested semiconductor/metal nanotubes D Gu, H Baumgart, K Tapily, P Shrestha, G Namkoong, X Ao, F Müller Nano Research 4, 164-170, 2011 | 41 | 2011 |
| Texturing and Tetragonal Phase Stabilization of ALD HfxZr1-xO2 Using a Cyclical Deposition and Annealing Scheme K Tapily, S Consiglio, RD Clark, R Vasić, E Bersch, J Jordan-Sweet, ... ECS Transactions 45 (3), 411, 2012 | 38 | 2012 |
| Self-aligned quadruple patterning integration using spacer on spacer pitch splitting at the resist level for sub-32nm pitch applications A Raley, S Thibaut, N Mohanty, K Subhadeep, S Nakamura, A Ko, ... Advanced Etch Technology for Nanopatterning V 9782, 30-43, 2016 | 35 | 2016 |
| Selective deposition with surface treatment KH Yu, KN Tapily, T Hakamata, S Kal, GJ Leusink US Patent 10,378,105, 2019 | 33 | 2019 |
| Three-dimensional semiconductor device and method of fabrication J Smith, A Devilliers, N Mohanty, S Kal, K Tapily US Patent 9,997,598, 2018 | 32 | 2018 |
| Antiferroelectric negative capacitance from a structural phase transition in zirconia M Hoffmann, Z Wang, N Tasneem, A Zubair, PV Ravindran, M Tian, ... Nature communications 13 (1), 1228, 2022 | 30 | 2022 |
| Method of selective deposition for forming fully self-aligned vias K Tapily US Patent 10,847,363, 2020 | 28 | 2020 |
| Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal SA Chew, H Yu, M Schaekers, S Demuynck, G Mannaert, E Kunnen, ... 2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017 | 28 | 2017 |
| Comparison of B2O3 and BN deposited by atomic layer deposition for forming ultrashallow dopant regions by solid state diffusion S Consiglio, RD Clark, D O'Meara, CS Wajda, K Tapily, GJ Leusink Journal of Vacuum Science & Technology A 34 (1), 2016 | 28 | 2016 |
