| Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review J Ajayan, D Nirmal, P Mohankumar, B Mounika, S Bhattacharya, S Tayal, ... Materials Science in Semiconductor Processing 151, 106982, 2022 | 55 | 2022 |
| Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review B Mounika, J Ajayan, S Bhattacharya, D Nirmal Micro and Nanostructures 168, 207317, 2022 | 39 | 2022 |
| Ferroelectric field effect transistors (fefets): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications J Ajayan, P Mohankumar, D Nirmal, LMIL Joseph, S Bhattacharya, ... Materials Today Communications 35, 105591, 2023 | 13 | 2023 |
| 2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications B Mounika, J Ajayan, S Bhattacharya Materials Science and Engineering: B 301, 117194, 2024 | 7 | 2024 |
| Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF … B Mounika, J Ajayan, S Bhattacharya, D Nirmal, VB Sreenivasulu, ... Microelectronics Journal 140, 105923, 2023 | 7 | 2023 |
| Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future … B Mounika, J Ajayan, S Bhattacharya Micro and Nanostructures 175, 207504, 2023 | 5 | 2023 |
| Investigation of back barrier material effects on the scalability of Fe-doped recess-gated AlN/GaN HEMTs for next generation RF power electronics B Mounika, J Ajayan, S Bhattacharya, D Nirmal Micro and Nanostructures 171, 207431, 2022 | 5 | 2022 |
| An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power … B Mounika, J Ajayan, S Bhattacharya Microelectronic Engineering 271, 111948, 2023 | 4 | 2023 |
| A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications G Deshpande, S Bhattacharya, J Ajayan, B Mounika, D Nirmal Journal of Electronic Materials, 1-21, 2024 | | 2024 |
| Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics A Akshaykranth, J Ajayan, S Bhattacharya, B Mounika Journal of Materials Science: Materials in Electronics 35 (15), 1-12, 2024 | | 2024 |
| Performance Evaluation of Nanoscale Gate Engineered AlN/GaN Recessed T-gated HEMT with Fe-doped Buffer for Future Power Electronic Applications JASB B. Mounika Nano World Journal 9 (5), 132-136, 2023 | | 2023 |
| Impact of Gate Structure and Fe-doped AlGaN Buffer on RF/DC Characteristics of Nanoscale AlN/GaN/SiC HEMT for Microwave Applications B Mounika, J Ajayan, S Bhattacharya NanoWorld J 9 (S5), S175-S179, 2023 | | 2023 |
| 4 Analysis of Simultaneous Switching Noise and IR Drop D Das, M Bandi, S Bhattacharya, S Das Nano-Interconnect Materials and Models for Next Generation Integrated …, 2023 | | 2023 |
| Analysis of Simultaneous Switching Noise and IR Drop D Das, M Bandi, S Bhattacharya, S Das Nano-Interconnect Materials and Models for Next Generation Integrated …, 0 | | |
Dr.Sandip BhattacharyaProfessor & Head, ECE, SR University, PDF from HiSIM Research Center, Hiroshima University, 🗾在 sru.edu.in 的电子邮件经过验证
