| Lead‐free highly efficient blue‐emitting Cs3Cu2I5 with 0D electronic structure T Jun, K Sim, S Iimura, M Sasase, H Kamioka, J Kim, H Hosono Advanced Materials 30 (43), 1804547, 2018 | 558 | 2018 |
| Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD J Sheng, TH Hong, HM Lee, KR Kim, M Sasase, J Kim, H Hosono, ... ACS applied materials & interfaces 11 (43), 40300-40309, 2019 | 221 | 2019 |
| Mobility–stability trade-off in oxide thin-film transistors YS Shiah, K Sim, Y Shi, K Abe, S Ueda, M Sasase, J Kim, H Hosono Nature Electronics, 800-807, 2021 | 142 | 2021 |
| Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs H Hosono, J Kim, Y Toda, T Kamiya, S Watanabe Proceedings of the National Academy of Sciences 114 (2), 233-238, 2017 | 134 | 2017 |
| Engineering Copper Iodide (CuI) for Multifunctional p‐Type Transparent Semiconductors and Conductors A Liu, H Zhu, MG Kim, J Kim, YY Noh Advanced Science 8 (14), 2100546, 2021 | 115 | 2021 |
| Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, Naoto Watanabe, Koji Kimoto ... NPG Asia Materials, e359, 2017 | 113 | 2017 |
| Performance boosting strategy for perovskite light-emitting diodes K Sim, T Jun, J Bang, H Kamioka, J Kim, H Hiramatsu, H Hosono Applied Physics Reviews 6 (3), 2019 | 105 | 2019 |
| Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors J Kim, J Bang, N Nakamura, H Hosono APL Materials 7 (2), 2019 | 87 | 2019 |
| Exploration of stable strontium phosphide-based electrides: theoretical structure prediction and experimental validation J Wang, K Hanzawa, H Hiramatsu, J Kim, N Umezawa, K Iwanaka, T Tada, ... Journal of the American Chemical Society 139 (44), 15668-15680, 2017 | 86 | 2017 |
| A Highly Efficient and Stable Blue‐Emitting Cs5Cu3Cl6I2 with a 1D Chain Structure J Li, T Inoshita, T Ying, A Ooishi, J Kim, H Hosono Advanced Materials 32 (37), 2002945, 2020 | 84 | 2020 |
| One-step solution synthesis of white-light-emitting films via dimensionality control of the Cs–Cu–I system T Jun, T Handa, K Sim, S Iimura, M Sasase, J Kim, Y Kanemitsu, ... APL Materials 7 (11), 2019 | 83 | 2019 |
| Material Design of p‐Type Transparent Amorphous Semiconductor, Cu–Sn–I T Jun, J Kim, M Sasase, H Hosono Advanced Materials 30 (12), 1706573, 2018 | 82 | 2018 |
| High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and … CH Choi, T Kim, S Ueda, YS Shiah, H Hosono, J Kim, JK Jeong ACS Applied Materials & Interfaces, 2021 | 38 | 2021 |
| Identifying quasi-2D and 1D electrides in yttrium and scandium chlorides via geometrical identification B Wan, Y Lu, Z Xiao, Y Muraba, J Kim, D Huang, L Wu, H Gou, J Zhang, ... npj Computational Materials 4 (1), 77, 2018 | 38 | 2018 |
| Chemical design and example of transparent bipolar semiconductors T Arai, S Iimura, J Kim, Y Toda, S Ueda, H Hosono Journal of the American Chemical Society 139 (47), 17175-17180, 2017 | 37 | 2017 |
| Unintended carbon-related impurity and negative bias instability in high-mobility oxide TFTs YS Shiah, K Sim, S Ueda, J Kim, H Hosono IEEE Electron Device Letters 42 (9), 1319-1322, 2021 | 34 | 2021 |
| Highly dense and stable p-type thin-film transistor based on atomic layer deposition SnO fabricated by two-step crystallization HM Kim, SH Choi, HJ Jeong, JH Lee, J Kim, JS Park ACS Applied Materials & Interfaces 13 (26), 30818-30825, 2021 | 28 | 2021 |
| Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization N On, BK Kim, Y Kim, EH Kim, JH Lim, H Hosono, J Kim, H Yang, ... Scientific reports 10 (1), 18868, 2020 | 28 | 2020 |
| Zeolitic intermetallics: lnnisi (ln= la–nd) H Mizoguchi, SW Park, K Kishida, M Kitano, J Kim, M Sasase, T Honda, ... Journal of the American Chemical Society 141 (8), 3376-3379, 2019 | 28 | 2019 |
| High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure J Kim, YS Shiah, K Sim, S Iimura, K Abe, M Tsuji, M Sasase, H Hosono Advanced Science, 2104993, 2021 | 24 | 2021 |
Hideo HosonoProfessor, MDX Research Center for Element strategy, Tokyo Institute of Technology在 mces.titech.ac.jp 的电子邮件经过验证
