| A two-atom electron pump B Roche, RP Riwar, B Voisin, E Dupont-Ferrier, R Wacquez, M Vinet, ... Nature communications 4, 1581, 2013 | 131 | 2013 |
| Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ... Nano letters 14 (4), 2094-2098, 2014 | 117 | 2014 |
| Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ... Nano letters 16 (1), 88-92, 2015 | 113 | 2015 |
| Coherent coupling of two dopants in a silicon nanowire probed by Landau-Zener-Stückelberg interferometry E Dupont-Ferrier, B Roche, B Voisin, X Jehl, R Wacquez, M Vinet, ... Physical review letters 110 (13), 136802, 2013 | 100 | 2013 |
| Hybrid metal-semiconductor electron pump for quantum metrology X Jehl, B Voisin, T Charron, P Clapera, S Ray, B Roche, M Sanquer, ... Physical Review X 3 (2), 021012, 2013 | 77 | 2013 |
| Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy B Roche, E Dupont-Ferrier, B Voisin, M Cobian, X Jehl, R Wacquez, ... Physical review letters 108 (20), 206812, 2012 | 74 | 2012 |
| Spatial metrology of dopants in silicon with exact lattice site precision M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ... Nature nanotechnology 11 (9), 763, 2016 | 66 | 2016 |
| A tunable, dual mode field-effect or single electron transistor B Roche, B Voisin, X Jehl, R Wacquez, M Sanquer, M Vinet, ... Applied Physics Letters 100 (3), 032107, 2012 | 58 | 2012 |
| Valley interference and spin exchange at the atomic scale in silicon B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, ... Nature Communications 11 (1), 1-11, 2020 | 31 | 2020 |
| Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: 300K transition to Single Electron Transistor V Deshpande, S Barraud, X Jehl, R Wacquez, M Vinet, R Coquand, ... Solid-State Electronics 84, 179-184, 2013 | 31 | 2013 |
| Spatially resolved resonant tunneling on single atoms in silicon B Voisin, J Salfi, J Bocquel, R Rahman, S Rogge Journal of Physics: Condensed Matter 27 (15), 154203, 2015 | 28 | 2015 |
| Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory M Usman, R Rahman, J Salfi, J Bocquel, B Voisin, S Rogge, G Klimeck, ... Journal of Physics: Condensed Matter 27 (15), 154207, 2015 | 27 | 2015 |
| Two-electron states of a group-V donor in silicon from atomistic full configuration interactions A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman, G Klimeck, ... Physical Review B 97 (19), 195301, 2018 | 26 | 2018 |
| Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, MY Simmons, ... Physical Review X 8 (3), 031049, 2018 | 24 | 2018 |
| Physical Review X J Salfi, B Voisin, A Tankasala, J Bocquel, M Usman, MY Simmons, ... | 24* | |
| Donor wave functions in Si gauged by STM images AL Saraiva, J Salfi, J Bocquel, B Voisin, S Rogge, RB Capaz, ... Physical Review B 93 (4), 045303, 2016 | 23 | 2016 |
| 300 K operating full-CMOS integrated Single Electron Transistor (SET)-FET circuits V Deshpande, R Wacquez, M Vinet, X Jehl, S Barraud, R Coquand, ... Electron Devices Meeting (IEDM), 2012 IEEE International, 8.7. 1-8.7. 4, 2012 | 17 | 2012 |
| Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon FN Krauth, SK Gorman, Y He, MT Jones, P Macha, S Kocsis, C Chua, ... Physical Review Applied 17 (5), 054006, 2022 | 14 | 2022 |
| Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities V Deshpande, S Barraud, X Jehl, R Wacquez, M Vinet, R Coquand, ... Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the …, 2012 | 14 | 2012 |
| Control of the ionization state of three single donor atoms in silicon B Voisin, M Cobian, X Jehl, M Vinet, YM Niquet, C Delerue, ... Physical Review B 89 (16), 161404, 2014 | 13 | 2014 |
