受强制性开放获取政策约束的文章 - Shubham Patil了解详情
无法在其他位置公开访问的文章：3 篇
Integration of Non-Filamentary Pr0.7Ca0.3MnO3– Based Memristor With Silicon-PN Junction
J Sakhuja, S Rowtu, S Patil, S Lashkare, U Ganguly
IEEE Electron Device Letters 44 (5), 741-744, 2023
强制性开放获取政策： Department of Science & Technology, India
Enhancement in Bipolar Conductance Linearity by One Transistor-One Resistor (1T1R) cell with Non-Filamentary PCMO-RRAM as Synapse for Neural Networks
J Sakhuja, S Patil, S Mondal, S Lashkare, U Ganguly
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
强制性开放获取政策： Department of Science & Technology, India
Investigation of Dielectric and Quantum Confinement Based Dopant Deactivation in the Extension Region of FinFET
N Saurabh, S Patil, A Rawat, T Chiarella, B Parvais, U Ganguly
IEEE Electron Device Letters 43 (8), 1171-1174, 2022
强制性开放获取政策： Department of Science & Technology, India
可在其他位置公开访问的文章：5 篇
Process-Voltage-Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling-Based Neuron
S Patil, A Sharma, R Gaurav, A Kadam, AK Singh, S Lashkare, ...
IEEE Transactions on Electron Devices, 2023
强制性开放获取政策： Department of Science & Technology, India
Phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application
S Patil, S Kumar, B Kamaliya, AH Pandey, RG Mote, A Laha, U Ganguly
Thin Solid Films 778, 139907, 2023
强制性开放获取政策： Department of Science & Technology, India
Highly oriented crystalline si on epitaxial Gd2O3/Si (111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application
S Patil, S Kumar, AH Pandey, S Bhunia, B Kamaliya, A Sharma, ...
Thin Solid Films 793, 140272, 2024
强制性开放获取政策： Department of Science & Technology, India
An accurate process-induced variability-aware compact model-based circuit performance estimation for design-technology co-optimization
S Patil, A Rawat, U Ganguly
IEEE Transactions on Electron Devices 69 (1), 45-50, 2021
强制性开放获取政策： Department of Science & Technology, India
Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO2 on Silicon
H Ali, A Pandey, R Srinu, P Meihar, S Patil, S Lashkare, V Deshpande, ...
IEEE Transactions on Electron Devices 70 (11), 6034-6041, 2023
强制性开放获取政策： Department of Science & Technology, India
出版信息和资助信息由计算机程序自动确定