受强制性开放获取政策约束的文章 - Bhupendra K Sharma了解详情
无法在其他位置公开访问的文章：3 篇
High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/channel interface
BK Sharma, A Stoesser, SK Mondal, SK Garlapati, MH Fawey, ...
ACS applied materials & interfaces, 2018
强制性开放获取政策： Helmholtz Association, Department of Science & Technology, India
Effect of UV exposure on rectifying behavior of polyaniline/ZnO heterojunction
BK Sharma, N Khare
Semiconductor Science and Technology 28 (12), 125022, 2013
强制性开放获取政策： Department of Science & Technology, India
Instability in an amorphous In–Ga–Zn–O field effect transistor upon water exposure
BK Sharma, JH Ahn
Journal of Physics D: Applied Physics 49 (5), 055102, 2016
强制性开放获取政策： Department of Science & Technology, India
可在其他位置公开访问的文章：3 篇
Two-dimensional materials in functional three-dimensional architectures with applications in photodetection and imaging
W Lee, Y Liu, Y Lee, BK Sharma, SM Shinde, SD Kim, K Nan, Z Yan, ...
Nature communications 9 (1), 1417, 2018
强制性开放获取政策： US Department of Energy
Flexible and stretchable oxide electronics
BK Sharma, JH Ahn
Advanced Electronic Materials 2 (8), 2016
强制性开放获取政策： Department of Science & Technology, India
Study of intermediate states in shape transition of ZnO nanostructures from nanoparticles to nanorods
BK Sharma, N Khare, M Kumar, P Kumar
Chemical Physics Letters 515 (1-3), 62-67, 2011
强制性开放获取政策： Council of Scientific and Industrial Research, India
出版信息和资助信息由计算机程序自动确定