Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS T Cheiwchanchamnangij, WRL Lambrecht Physical Review B—Condensed Matter and Materials Physics 85 (20), 205302, 2012 | 1580 | 2012 |
Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN K Kim, WRL Lambrecht, B Segall Physical Review B 53 (24), 16310, 1996 | 995* | 1996 |
Electronic band structure, phonons, and exciton binding energies of halide perovskites CsSnCl, CsSnBr, and CsSnI L Huang, WRL Lambrecht Physical Review B—Condensed Matter and Materials Physics 88 (16), 165203, 2013 | 700 | 2013 |
Minimal basis sets in the linear muffin-tin orbital method: Application to the diamond-structure crystals C, Si, and Ge WRL Lambrecht, OK Andersen Physical Review B 34 (4), 2439, 1986 | 619 | 1986 |
Efficient ab initio method for the calculation of frequency-dependent second-order optical response in semiconductors SN Rashkeev, WRL Lambrecht, B Segall Physical Review B 57 (7), 3905, 1998 | 444 | 1998 |
Electronic structure of rare-earth nitrides using the approach: Importance of allowing orbitals to break the cubic crystal symmetry P Larson, WRL Lambrecht, A Chantis, M Van Schilfgaarde Physical Review B—Condensed Matter and Materials Physics 75 (4), 045114, 2007 | 429 | 2007 |
Calculated elastic constants and deformation potentials of cubic SiC WRL Lambrecht, B Segall, M Methfessel, M Van Schilfgaarde Physical Review B 44 (8), 3685, 1991 | 379 | 1991 |
Valence-band ordering and magneto-optic exciton fine structure in ZnO WRL Lambrecht, AV Rodina, S Limpijumnong, B Segall, BK Meyer Physical Review B 65 (7), 075207, 2002 | 347 | 2002 |
Effective masses and valence-band splittings in GaN and AlN K Kim, WRL Lambrecht, B Segall, M Van Schilfgaarde Physical Review B 56 (12), 7363, 1997 | 334 | 1997 |
Second-harmonic generation of I-III-VI 2 chalcopyrite semiconductors: Effects of chemical substitutions SN Rashkeev, WRL Lambrecht Physical Review B 63 (16), 165212, 2001 | 312 | 2001 |
Diamond nucleation by hydrogenation of the edges of graphitic precursors WRL Lambrecht, CH Lee, B Segall, JC Angus, Z Li, M Sunkara Nature 364 (6438), 607-610, 1993 | 307 | 1993 |
Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy G Martin, S Strite, A Botchkarev, A Agarwal, A Rockett, H Morkoc, ... Applied physics letters 65 (5), 610-612, 1994 | 302 | 1994 |
Electronic and crystal structure of : Full-potential electronic structure calculations P Lukashev, WRL Lambrecht, T Kotani, M Van Schilfgaarde Physical Review B—Condensed Matter and Materials Physics 76 (19), 195202, 2007 | 287 | 2007 |
Electronic structure of GaN with strain and phonon distortions K Kim, WRL Lambrecht, B Segall Physical Review B 50 (3), 1502, 1994 | 268 | 1994 |
High field electron transport properties of bulk ZnO JD Albrecht, PP Ruden, S Limpijumnong, WRL Lambrecht, KF Brennan Journal of Applied Physics 86 (12), 6864-6867, 1999 | 256 | 1999 |
Electronic band structure of SiC polytypes: a discussion of theory and experiment WRL Lambrecht, S Limpijumnong, SN Rashkeev, B Segall physica status solidi (b) 202 (1), 5-33, 1997 | 251 | 1997 |
Theoretical study of the relative stability of wurtzite and rocksalt phases in MgO and GaN S Limpijumnong, WRL Lambrecht Physical Review B 63 (10), 104103, 2001 | 226 | 2001 |
Electronic structure and optical spectra of the semimetal ScAs and of the indirect-band-gap semiconductors ScN and GdN WRL Lambrecht Physical Review B 62 (20), 13538, 2000 | 215 | 2000 |
Stacking fault band structure in 4H–SiC and its impact on electronic devices MS Miao, S Limpijumnong, WRL Lambrecht Applied Physics Letters 79 (26), 4360-4362, 2001 | 204 | 2001 |
First-principles calculation of the O vacancy in ZnO: A self-consistent gap-corrected approach TR Paudel, WRL Lambrecht Physical Review B—Condensed Matter and Materials Physics 77 (20), 205202, 2008 | 180 | 2008 |