| A theoretical study of CH4 dissociation on pure and gold‐alloyed Ni (111) surfaces P Kratzer, B Hammer, JK Norskov The Journal of chemical physics 105 (13), 5595-5604, 1996 | 309 | 1996 |
| Preserving the Half-Metallicity at the Heusler Alloy Co2MnSi(001) Surface: A Density Functional Theory Study SJ Hashemifar, P Kratzer, M Scheffler Physical review letters 94 (9), 096402, 2005 | 220 | 2005 |
| Atomic structure of the GaAs (001)−(2× 4) surface resolved using scanning tunneling microscopy and first-principles theory VP LaBella, H Yang, DW Bullock, PM Thibado, P Kratzer, M Scheffler Physical Review Letters 83 (15), 2989, 1999 | 220 | 1999 |
| Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy LG Wang, P Kratzer, M Scheffler, N Moll Physical review letters 82 (20), 4042, 1999 | 173 | 1999 |
| Size, shape, and stability of InAs quantum dots on the GaAs (001) substrate LG Wang, P Kratzer, N Moll, M Scheffler Physical Review B 62 (3), 1897, 2000 | 153 | 2000 |
| Magnetism in C-or N-doped MgO and ZnO: a density-functional study of impurity pairs H Wu, A Stroppa, S Sakong, S Picozzi, M Scheffler, P Kratzer Physical review letters 105 (26), 267203, 2010 | 142 | 2010 |
| Effect of the cluster size in modeling the H2 desorption and dissociative adsorption on Si (001) E Penev, P Kratzer, M Scheffler The Journal of chemical physics 110 (8), 3986-3994, 1999 | 136 | 1999 |
| Highly site-specific H 2 adsorption on vicinal Si (001) surfaces P Kratzer, E Pehlke, M Scheffler, MB Raschke, U Höfer Physical review letters 81 (25), 5596, 1998 | 134 | 1998 |
| Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots R Santoprete, B Koiller, RB Capaz, P Kratzer, QKK Liu, M Scheffler Physical Review-Section B-Condensed Matter 68 (23), 235311-235311, 2003 | 129 | 2003 |
| First-principles studies of kinetics in epitaxial growth of III–V semiconductors P Kratzer, E Penev, M Scheffler Applied Physics A 75, 79-88, 2002 | 127 | 2002 |
| Role of electronic correlation in the Si (100) reconstruction: a quantum Monte Carlo study SB Healy, C Filippi, P Kratzer, E Penev, M Scheffler Physical Review Letters 87 (1), 016105, 2001 | 127 | 2001 |
| Effect of strain on surface diffusion in semiconductor heteroepitaxy E Penev, P Kratzer, M Scheffler Physical Review B 64 (8), 085401, 2001 | 126 | 2001 |
| Arsenic dimer dynamics during MBE growth: theoretical evidence for a novel chemisorption state of As 2 molecules on GaAs surfaces CG Morgan, P Kratzer, M Scheffler Physical review letters 82 (24), 4886, 1999 | 124 | 1999 |
| The basics of electronic structure theory for periodic systems P Kratzer, J Neugebauer Frontiers in chemistry 7, 106, 2019 | 117 | 2019 |
| Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors P Kratzer, M Scheffler Physical review letters 88 (3), 036102, 2002 | 116 | 2002 |
| Probing interface electronic structure with overlayer quantum-well resonances: Al/Si (111) L Aballe, C Rogero, P Kratzer, S Gokhale, K Horn Physical review letters 87 (15), 156801, 2001 | 116 | 2001 |
| Reaction dynamics of molecular hydrogen on silicon surfaces P Bratu, W Brenig, A Gro, M Hartmann, U Höfer, P Kratzer, R Russ Physical Review B 54 (8), 5978, 1996 | 116 | 1996 |
| Geometric and electronic factors determining the differences in reactivity of H2 on Cu (100) and Cu (111) P Kratzer, B Hammer, JK Nørskov Surface science 359 (1-3), 45-53, 1996 | 116 | 1996 |
| Highly excited molecules from Eley-Rideal reactions P Kratzer, W Brenig Surface science 254 (1-3), 275-280, 1991 | 114 | 1991 |
| Shape transition during epitaxial growth of quantum dots on : Theory and experiment P Kratzer, QKK Liu, P Acosta-Diaz, C Manzano, G Costantini, ... Physical Review B—Condensed Matter and Materials Physics 73 (20), 205347, 2006 | 109 | 2006 |
Matthias SchefflerDirector of NOMAD Laboratory at FHI of Max-Planck-Gesellschaft and IRIS-Adlershof of HU Berlin在 fhi-berlin.mpg.de 的电子邮件经过验证
