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Alexander Uvarov
Alexander Uvarov
Academic University
在 spbau.ru 的电子邮件经过验证
标题
引用次数
引用次数
年份
Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si
AD Bolshakov, VV Fedorov, KY Shugurov, AM Mozharov, GA Sapunov, ...
Nanotechnology 30 (39), 395602, 2019
352019
All‐Slot‐Die‐Coated Inverted Perovskite Solar Cells in Ambient Conditions with Chlorine Additives
TS Le, D Saranin, P Gostishchev, I Ermanova, T Komaricheva, ...
Solar RRL 6 (2), 2100807, 2022
342022
Low temperature plasma enhanced deposition of GaP films on Si substrate
AS Gudovskikh, IA Morozov, AV Uvarov, DA Kudryashov, EV Nikitina, ...
Journal of Vacuum Science & Technology A 36 (2), 2018
262018
Si doped GaP layers grown on Si wafers by low temperature PE-ALD
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
Journal of Renewable and Sustainable Energy 10 (2), 2018
252018
The study of latex sphere lithography for high aspect ratio dry silicon etching
I Morozov, A Gudovskikh, A Uvarov, A Baranov, V Sivakov, D Kudryashov
physica status solidi (a) 217 (4), 1900535, 2020
232020
Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
AV Uvarov, AS Gudovskikh, VN Nevedomskiy, AI Baranov, ...
Journal of Physics D: Applied Physics 53 (34), 345105, 2020
182020
Stretchable transparent light-emitting diodes based on InGaN/GaN quantum well microwires and Carbon nanotube films
FM Kochetkov, V Neplokh, VA Mastalieva, S Mukhangali, AA Vorob’ev, ...
Nanomaterials 11 (6), 1503, 2021
152021
Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface
KY Shugurov, AM Mozharov, AD Bolshakov, VV Fedorov, GA Sapunov, ...
Nanotechnology 31 (24), 244003, 2020
112020
Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
physica status solidi (a) 216 (10), 1800617, 2019
102019
A. Jaffré, S. Le Gall, A. Darga, A. Brezard-Oudot, J.‑P
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
Kleider. Phys. Status Solidi A 216, 1800617, 2018
92018
Low temperature plasma enhanced deposition approach for fabrication of microcrystalline GaP/Si superlattice
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
Journal of Vacuum Science & Technology A 36 (2), 2018
82018
n‐GaP/p‐Si Heterojunction Solar Cells Fabricated by PE‐ALD
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
physica status solidi c 14 (10), 1700150, 2017
72017
Study of Cryogenic Unmasked Etching of “Black Silicon” with Ar Gas Additives
EA Vyacheslavova, IA Morozov, DA Kudryashov, AV Uvarov, AI Baranov, ...
ACS omega 7 (7), 6053-6057, 2022
62022
Impact of Interface Recombination on Quantum Efficiency of a‐Si: H/c‐Si Solar Cells Based on Si Wires
A Gudovskikh, D Kudryashov, A Baranov, A Uvarov, I Morozov, ...
physica status solidi (a) 218 (22), 2100339, 2021
62021
A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition
AS Gudovskikh, DA Kudryashov, AI Baranov, AV Uvarov, IA Morozov
Technical Physics Letters 47, 96-98, 2021
62021
Investigation of silicon wafers thermal degradation by photoluminescence decay measurements
D Kudryashov, A Gudovskikh, A Uvarov, E Nikitina
AIP Conference Proceedings 2012 (1), 2018
62018
Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
AV Uvarov, AS Gudovskikh
Journal of Physics: Conference Series 1038 (1), 012108, 2018
52018
Multijunction solar cells concept based on GaP/Si nanostructures
AS Gudovskikh, AV Uvarov, IA Morozov, AI Baranov, DA Kudryashov, ...
Materials Today: Proceedings 19, 47-52, 2019
42019
Investigation of Plasma Deposited Boron Phosphide and Its Contact to Silicon
AA Maksimova, AV Uvarov, AI Baranov, AS Gudovskikh, DA Kudryashov, ...
ACS Applied Energy Materials 5 (5), 5367-5373, 2022
32022
Study of latex sphere mask dry etching in oxygen
IA Morozov, KA Vyacheslavova, AS Gudovskikh, AV Uvarov, AI Baranov, ...
Journal of Physics: Conference Series 1697 (1), 012192, 2020
32020
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