| A high temperature active GaN-HEMT downconversion mixer for downhole communications JM Salem, DS Ha 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 946-949, 2016 | 23 | 2016 |
| High temperature VCO based on GaN devices for downhole communications T Feng, JM Salem, DS Ha Circuits and Systems (ISCAS), 2017 IEEE International Symposium on, 1-4, 2017 | 22 | 2017 |
| Design of high temperature combline band-pass filters for downhole communications M Ehteshamuddin, JM Salem, DS Ha Additional Papers and Presentations 2016 (HiTEC), 000312-000317, 2016 | 11 | 2016 |
| Dual use of power lines for design-for-testability—A CMOS receiver design JM Salem, DS Ha IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (3 …, 2015 | 10 | 2015 |
| A high-temperature model for GaN-HEMT transistors and its application to resistive mixer design JM Salem, FL Pour, DS Ha IEEE Transactions on Circuits and Systems I: Regular Papers 68 (2), 581-591, 2020 | 8 | 2020 |
| A resistive GaN-HEMT mixer for a cable modem operable up to 250° C for downhole communications JM Salem, DS Ha Journal of Microelectronics and Electronic Packaging 14 (1), 17-25, 2017 | 8 | 2017 |
| A high temperature passive GaN-HEMT mixer for downhole communications JM Salem, DS Ha Additional Papers and Presentations 2016 (HiTEC), 000272-000277, 2016 | 8 | 2016 |
| A robust receiver for power line communications in integrated circuits J Salem, DS Ha 2012 IEEE 55th International Midwest Symposium on Circuits and Systems …, 2012 | 6 | 2012 |
| A high temperature RF front-end of a transceiver for high speed downhole communications JMM Salem Virginia Tech, 2017 | 4 | 2017 |
| High temperature RF transceiver design for high-speed downhole communications JM Salem, FL Pour, DS Ha Microelectronics Journal 129, 105609, 2022 | 3 | 2022 |
| A Reliable CMOS Receiver for Power Line Communications in Integrated Circuits JMM Salem Virginia Polytechnic Institute and State University, 2012 | 2 | 2012 |
| In-situ bottomhole assembly analysis systems and methods to perform an in-situ analysis of a downhole communication system JMM Salem, MC Griffing, IS Vehra, R Sridharan US Patent App. 17/725,520, 2023 | | 2023 |
| SOLID STATE TUNING WITH COUPLED INDUCTORS FOR DOWNHOLE SYSTEMS MY Mark Wayne HAYENGA, Matthew C. GRIFFING, Jebreel M M SALEM, Ranganathan ... US Patent 20,230,094,814, 2023 | | 2023 |
| A High Temperature 4H-SiC Voltage Reference for Depletion Mode GaN-Based Circuits ZH Zhang, JM Salem, DS Ha Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT) 2017 (HiTEN …, 2017 | | 2017 |
| A high temperature variable gain amplifier based on GaN HEMT devices for downhole communications M Ehteshamuddin, JM Salem, DS Ha 2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017 | | 2017 |
| A 96-MB 3D-Stacked SRAM Using Inductive Coupling With 0.4-V Transmitter, Termination Scheme and 12: 1 SerDes in 40-nm CMOS.................... K. Shiba, T. Omori, K. Ueyoshi, S … W Jiang, Y Zhu, CH Chan, B Murmann, RP Martins, JM Salem, FL Pour, ... | | |
| Dual Use of Power Lines for Design-for-Testability (DFT)-A CMOS Receiver Design JM Salem, DS Ha | | |
Dong Sam HaProfessor of Electrical and Computer Engineering, Virginia Tech在 vt.edu 的电子邮件经过验证
Dong Sam HaProfessor of Electrical and Computer Engineering, Virginia Tech在 vt.edu 的电子邮件经过验证