受强制性开放获取政策约束的文章 - Hardhyan Sheoran了解详情
无法在其他位置公开访问的文章：9 篇
A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications
H Sheoran, V Kumar, R Singh
ACS Applied Electronic Materials 4 (6), 2589-2628, 2022
强制性开放获取政策： Council of Scientific and Industrial Research, India
High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga2O3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature …
H Sheoran, S Fang, F Liang, Z Huang, S Kaushik, N Manikanthababu, ...
ACS Applied Materials & Interfaces 14 (46), 52096-52107, 2022
强制性开放获取政策： 国家自然科学基金委员会, Council of Scientific and Industrial Research, India …
Rapidly responding room temperature NO2 gas sensor based on SnSe nanostructured film
S Rani, M Kumar, H Sheoran, R Singh, VN Singh
Materials Today Communications 30, 103135, 2022
强制性开放获取政策： Council of Scientific and Industrial Research, India, Department of Science …
Deep-ultraviolet photodetectors based on hexagonal boron nitride nanosheets enhanced by localized surface plasmon resonance in Al nanoparticles
S Kaushik, S Karmakar, RK Varshney, H Sheoran, D Chugh, C Jagadish, ...
ACS Applied Nano Materials 5 (5), 7481-7491, 2022
强制性开放获取政策： Australian Research Council
Investigation of a vertical 2D/3D semiconductor heterostructure based on GaSe and Ga2O3
S Sorifi, S Kaushik, H Sheoran, R Singh
Journal of Physics D: Applied Physics 55 (36), 365105, 2022
强制性开放获取政策： Department of Science & Technology, India
Electrical characteristics and defect dynamics induced by swift heavy ion irradiation in Pt/PtO/-Ga₂O₃ vertical Schottky barrier diodes
N Manikanthababu, H Sheoran, K Prajna, SA Khan, K Asokan, JV Vas, ...
IEEE Transactions on Electron Devices 69 (11), 5996-6001, 2022
强制性开放获取政策： Department of Science & Technology, India
Exploring current conduction mechanisms in 6 MeV ion irradiated Au/SiO2/beta-Ga2O3 metal-oxide-semiconductor devices
N Manikanthababu, BR Tak, H Sheoran, K Prajna, BK Panigrahi, R Singh
2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020
强制性开放获取政策： Department of Science & Technology, India
Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K)
H Sheoran, JK Kaushik, R Singh
Materials Science in Semiconductor Processing 165, 107606, 2023
强制性开放获取政策： Council of Scientific and Industrial Research, India
Investigation of High Performance Schottky Diodes on Ga2O3 Epilayer using Cu with High Barrier Height, High Temperature Stability and Repeatability
H Sheoran, R Singh
Journal of Physics D: Applied Physics 56 (40), 405113, 2023
强制性开放获取政策： Council of Scientific and Industrial Research, India
可在其他位置公开访问的文章：3 篇
Temperature-dependent electrical characteristics of Ni/Au vertical Schottky barrier diodes on β-Ga2O3 epilayers
H Sheoran, BR Tak, N Manikanthababu, R Singh
ECS Journal of Solid State Science and Technology 9 (5), 055004, 2020
强制性开放获取政策： Council of Scientific and Industrial Research, India
Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices
N Manikanthababu, H Sheoran, P Siddham, R Singh
Crystals 12 (7), 1009, 2022
强制性开放获取政策： Council of Scientific and Industrial Research, India, Department of Science …
Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices. Crystals 2022, 12, 1009
N Manikanthababu, H Sheoran, P Siddham, R Singh
s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2022
强制性开放获取政策： Council of Scientific and Industrial Research, India, Department of Science …
出版信息和资助信息由计算机程序自动确定