| Power amplifiers for mm-wave 5G applications: Technology comparisons and CMOS-SOI demonstration circuits PM Asbeck, N Rostomyan, M Özen, B Rabet, JA Jayamon IEEE Transactions on Microwave Theory and Techniques 67 (7), 3099-3109, 2019 | 121 | 2019 |
| Multi-drive stacked-FET power amplifiers at 90 GHz in 45 nm SOI CMOS A Agah, JA Jayamon, PM Asbeck, LE Larson, JF Buckwalter IEEE Journal of Solid-State Circuits 49 (5), 1148-1157, 2014 | 96 | 2014 |
| Multigate-cell stacked FET design for millimeter-wave CMOS power amplifiers JA Jayamon, JF Buckwalter, PM Asbeck IEEE Journal of Solid-State Circuits 51 (9), 2027-2039, 2016 | 90 | 2016 |
| Frequency doublers with 10.2/5.2 dBm peak power at 100/202 GHz in 45nm SOI CMOS G Liu, J Jayamon, J Buckwalter, P Asbeck 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 271-274, 2015 | 48 | 2015 |
| 15 GHz Doherty power amplifier with RF predistortion linearizer in CMOS SOI N Rostomyan, JA Jayamon, PM Asbeck IEEE Transactions on Microwave Theory and Techniques 66 (3), 1339-1348, 2017 | 46 | 2017 |
| A PMOS mm-wave power amplifier at 77 GHz with 90 mW output power and 24% efficiency JA Jayamon, JF Buckwalter, PM Asbeck 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 262-265, 2016 | 45 | 2016 |
| A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS J Jayamon, A Agah, B Hanafi, H Dabag, J Buckwalter, P Asbeck 2013 IEEE Radio and Wireless Symposium, 256-258, 2013 | 44 | 2013 |
| Spatially power-combined W-band power amplifier using stacked CMOS J Jayamon, O Gurbuz, B Hanafi, A Agah, J Buckwalter, G Rebeiz, ... 2014 IEEE Radio Frequency Integrated Circuits Symposium, 151-154, 2014 | 31 | 2014 |
| 28 GHz> 250 mW CMOS power amplifier using multigate-cell design JA Jayamon, JF Buckwalter, PM Asbeck 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2015 | 27 | 2015 |
| A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS A Agah, J Jayamon, P Asbeck, J Buckwalter, L Larson 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-3, 2013 | 22 | 2013 |
| 15 GHz 25 dBm multigate-cell stacked CMOS power amplifier with 32% PAE and≥ 30 dB gain for 5G applications N Rostomyan, JA Jayamon, P Asbeck 2016 11th European Microwave Integrated Circuits Conference (EuMIC), 265-268, 2016 | 19 | 2016 |
| Series power combining: Enabling techniques for Si/SiGe millimeter-wave power amplifiers JF Buckwalter, S Daneshgar, J Jayamon, P Asbeck 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2016 | 12 | 2016 |
| Reliability of CMOS-SOI power amplifiers for millimeter-wave 5G: the case for pMOS P Asbeck, S Alluri, N Rostomyan, JA Jayamon 2022 IEEE International Reliability Physics Symposium (IRPS), 4B. 1-1-4B. 1-9, 2022 | 4 | 2022 |
| Interconnect effects on thermal resistance of CMOS-SOI transistors in microwave power integrated circuits S Alluri, J Jayamon, B Hanafi, PM Asbeck Solid-State Electronics 186, 108149, 2021 | 2 | 2021 |
| Simulation technique for thermal resistance in CMOS-SOI power amplifier integrated circuits S Alluri, J Jayamon, B Hanafi, P Asbeck 2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and …, 2020 | 2 | 2020 |
| Reliability Considerations for 5G and 6G Phased Arrays J Dunworth, J Jayamon, P Asbeck, G Rebeiz 2024 IEEE International Reliability Physics Symposium (IRPS), 5B. 1-1-5B. 1-6, 2024 | | 2024 |
| Partially-connected phase progression matrixes JA Jayamon, JD Dunworth US Patent App. 17/877,972, 2024 | | 2024 |
| Power-Combining Techniques for Millimeter-wave Silicon Power Amplifiers JA Jayamon University of California, San Diego, 2017 | | 2017 |
James BuckwalterUniversity of California - Santa Barbara在 ucsb.edu 的电子邮件经过验证
