| MoS2–InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity J Yang, H Kwak, Y Lee, YS Kang, MH Cho, JH Cho, YH Kim, SJ Jeong, ... ACS applied materials & interfaces 8 (13), 8576-8582, 2016 | 108 | 2016 |
| Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition YS Kang, CY Kim, MH Cho, KB Chung, CH An, H Kim, HJ Lee, CS Kim, ... Applied Physics Letters 97 (17), 2010 | 48 | 2010 |
| Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation DK Kim, KS Jeong, YS Kang, HK Kang, SW Cho, SO Kim, D Suh, S Kim, ... Scientific reports 6 (1), 34945, 2016 | 42 | 2016 |
| Structural Evolution and the Control of Defects in Atomic Layer Deposited HfO2–Al2O3 Stacked Films on GaAs YS Kang, DK Kim, KS Jeong, MH Cho, CY Kim, KB Chung, H Kim, ... ACS Applied Materials & Interfaces 5 (6), 1982-1989, 2013 | 41 | 2013 |
| Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates HK Kang, YS Kang, DK Kim, M Baik, JD Song, Y An, H Kim, MH Cho ACS Applied Materials & Interfaces 9 (20), 17526-17535, 2017 | 24 | 2017 |
| Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability YS Kang, HK Kang, DK Kim, KS Jeong, M Baik, Y An, H Kim, JD Song, ... ACS applied materials & interfaces 8 (11), 7489-7498, 2016 | 22 | 2016 |
| Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition M Baik, HK Kang, YS Kang, KS Jeong, Y An, S Choi, H Kim, JD Song, ... Scientific reports 7 (1), 11337, 2017 | 20 | 2017 |
| Effects of Surface Chemical Structure on the Mechanical Properties of Si1–xGex Nanowires JW Ma, WJ Lee, JM Bae, KS Jeong, YS Kang, MH Cho, JH Seo, JP Ahn, ... Nano letters 13 (3), 1118-1125, 2013 | 20 | 2013 |
| Improving Electrical Properties by Effective Sulfur Passivation via Modifying the Surface State of Substrate in HfO2/InP Systems HK Kang, YS Kang, M Baik, KS Jeong, DK Kim, JD Song, MH Cho The Journal of Physical Chemistry C 122 (13), 7226-7235, 2018 | 19 | 2018 |
| Effects of Nitrogen Incorporation in HfO2 Grown on InP by Atomic Layer Deposition: An Evolution in Structural, Chemical, and Electrical Characteristics YS Kang, DK Kim, HK Kang, KS Jeong, MH Cho, DH Ko, H Kim, JH Seo, ... ACS applied materials & interfaces 6 (6), 3896-3906, 2014 | 17 | 2014 |
| Defect states in epitaxial HfO2 films induced by atomic transport from n-GaAs (100) substrate CY Kim, KS Jeong, YS Kang, SW Cho, MH Cho, KB Chung, DH Ko, Y Yi, ... Journal of Applied Physics 109 (11), 2011 | 12 | 2011 |
| Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor M Baik, HK Kang, YS Kang, KS Jeong, C Lee, H Kim, JD Song, MH Cho Applied Surface Science 467, 1161-1169, 2019 | 10 | 2019 |
| Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping SH Oh, JW Ma, JM Bae, Y Kang, JP Ahn, HK Kang, J Chae, D Suh, ... Applied Surface Science 419, 1-8, 2017 | 10 | 2017 |
| Effects of spontaneous nitrogen incorporation by a 4 H-SiC (0001) surface caused by plasma nitridation DK Kim, YS Kang, KS Jeong, HK Kang, SW Cho, KB Chung, H Kim, ... Journal of Materials Chemistry C 3 (19), 5078-5088, 2015 | 10 | 2015 |
| Defect States below the Conduction Band Edge of HfO2 Grown on InP by Atomic Layer Deposition YS Kang, DK Kim, HK Kang, S Cho, S Choi, H Kim, JH Seo, J Lee, ... The Journal of Physical Chemistry C 119 (11), 6001-6008, 2015 | 9 | 2015 |
| Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor YS Kang, CY Kim, MH Cho, CH An, H Kim, JH Seo, CS Kim, TG Lee, ... Electrochemical and Solid-state letters 15 (4), G9, 2012 | 9 | 2012 |
| Electrical and band structural analyses of Ti1− xAlxOy films grown by atomic layer deposition on p-type GaAs Y An, C Mahata, C Lee, S Choi, YC Byun, YS Kang, T Lee, J Kim, MH Cho, ... Journal of Physics D: Applied Physics 48 (41), 415302, 2015 | 8 | 2015 |
| Electrical characteristics of HfO2 films on InP with different atomic‐layer‐deposition temperatures CH An, C Mahata, YC Byun, MS Lee, YS Kang, MH Cho, H Kim physica status solidi (a) 210 (7), 1381-1385, 2013 | 6 | 2013 |
| Defect-free erbium silicide formation using an ultrathin Ni interlayer J Choi, S Choi, YS Kang, S Na, HJ Lee, MH Cho, H Kim ACS Applied Materials & Interfaces 6 (16), 14712-14717, 2014 | 4 | 2014 |
| Change in crystalline structure and band alignment in atomic‐layer‐deposited HfO2 on InP using an annealing treatment YS Kang, DK Kim, MH Cho, JH Seo, HK Shon, TG Lee, YD Cho, SW Kim, ... physica status solidi (a) 210 (8), 1612-1617, 2013 | 4 | 2013 |
Sang Wan ChoPhysics, Yonsei University在 yonsei.ac.kr 的电子邮件经过验证
