| Ionizing radiation hardness tests of GaN HEMTs for harsh environments ACV Bôas, MAA de Melo, RBB Santos, R Giacomini, NH Medina, ... Microelectronics Reliability 116, 114000, 2021 | 32 | 2021 |
| Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments ACV Bôas, MAA De Melo, RBB Santos, R Giacomini, NH Medina, ... 2019 19th European Conference on Radiation and Its Effects on Components and …, 2019 | 9 | 2019 |
| Assessment of ionizing radiation hardness of a GaN field-effect transistor ACV Bôas, MAA de Melo, RBB Santos, RC Giacomini, NH Medina, ... 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2019 | 7 | 2019 |
| Reliability analysis of gamma-and X-ray TID effects, on a commercial AlGaN/GaN based FET ACV Bôas, SG Alberton, N Medina, VÂ Paulino, MAA Melo, RB Santos, ... Journal of Integrated Circuits and Systems 16 (3), 1-7, 2021 | 5 | 2021 |
| Failure mechanism and sampling frequency dependency on TID response of SAR ADCs CJ González, BL Costa, DN Machado, RG Vaz, ACV Bôas, OL Gonçalez, ... Journal of Electronic Testing 37, 329-343, 2021 | 3 | 2021 |
| Neutron-Induced Radiation Effects in UMOS Transistor SG Alberton, ACV Bôas, NH Medina, MA Guazzelli, VAP Aguiar, N Added, ... Journal of Physics: Conference Series 2340 (1), 012046, 2022 | 2 | 2022 |
| Ionizing radiation effects in a rectifier circuit ACV Bôas, MA Guazzelli, RC Giacomini, NH Medina Journal of Physics: Conference Series 1291 (1), 012019, 2019 | 2 | 2019 |
| Ionizing Radiation Hardness Characterization of GaN HEMTs Depends on the Radiation Source ACV Bôas, SG Alberton, NH Medina, VAP Aguiar, MAA Melo, RBB Santos, ... 2022 22nd European Conference on Radiation and Its Effects on Components and …, 2022 | 1 | 2022 |
| COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaN-based transistor 10 KeV X-ray Analysis ACV Bôas, SG Alberton, MAA de Melo, RBB Santos, RC Giacomini, ... Journal of Physics: Conference Series 2340 (1), 012045, 2022 | 1 | 2022 |
| Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions CJ González, DN Machado, RG Vaz, ACV Bôas, OL Gonçalez, H Puchner, ... Journal of Integrated Circuits and Systems 16 (3), 1, 2021 | 1 | 2021 |
| Neutron-induced effects on a commercial GaN High Electron Mobility Transistor ACV Bôas, SG Alberton, PR Garcia, NH Medina, VÂP Aguiar, MAA Melo, ... 2024 38th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2024 | | 2024 |
| Impact of Ionizing Radiation on the Behavior of Pseudo-Resistors with Temperature-Dependent Analysis AA de Sousa Gomes, CF Pereira, MA Guazzelli, ACV Boas, RG Stolf, ... 2024 38th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2024 | | 2024 |
| Alpha Particle-and Neutron-Induced Single-Event Effects in COTS Power FETS SG Alberton, ACV Bôas, NH Medina, MA Guazzelli, VAP Aguiar, N Added, ... 2022 22nd European Conference on Radiation and Its Effects on Components and …, 2022 | | 2022 |
| Neutron-Induced Radiation Effects in UMOS Transistor A SG, ACV BOAS, NH MEDINA, MA Guazzelli, VAP AGUIAR, N ADDED, ... | | 2022 |
| New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects MA Guazzelli, ACV Bôas, MAA de Melo, RBB Santos, RC Giacomini, ... Abstracts, 2019 | | 2019 |
| Ionizing radiation effects in a rectifier circuit F Barros, NH Medina, MA Silveira, ACV Bôas Resumos, 2018 | | 2018 |
| EFEITOS DA DOSE IONIZANTE TOTAL NA FUNCIONALIDADE DE TRANSISTORES MOSFETS D Baraldi, ACV Bôas, MAG da Silveira | | |
| Caracterização Elétrica de Transistores de Potência do tipo Trench por TID ALQ Guidi, ACV Bôas, MA Guazzelli | | |
| Tables of RADECS 2022 Papers L Coïc, G Augustin, L Serrano, J Guillermin, N Chatry, J Carron, R Ecoffet, ... | | |
| Efeitos da Radiação ionizante (TID) em um circuito retificador de meia onda ACV Bôas, MAG da Silveira | | |
