Quaternary Semiconductor Cd1−xZnxTe1−ySey for High-Resolution, Room-Temperature Gamma-Ray Detection SK Chaudhuri, JW Kleppinger, OF Karadavut, R Nag, KC Mandal Crystals 11 (7), 827, 2021 | 21 | 2021 |
Self-biased Mo/n-4H-SiC Schottky barriers as high-performance ultraviolet photodetectors SK Chaudhuri, R Nag, KC Mandal IEEE Electron Device Letters 44 (5), 733-736, 2023 | 11 | 2023 |
Influence of carrier trapping on radiation detection properties in CVD grown 4H-SiC epitaxial layers with varying thickness up to 250 µm JW Kleppinger, SK Chaudhuri, OF Karadavut, R Nag, KC Mandal Journal of Crystal Growth 583, 126532, 2022 | 11 | 2022 |
Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation OF Karadavut, SK Chaudhuri, JW Kleppinger, R Nag, KC Mandal Applied Physics Letters 121 (1), 2022 | 9 | 2022 |
Deep-Level Transient Spectroscopy and Radiation Detection Performance Studies on Neutron Irradiated 250-μm-Thick 4H-SiC Epitaxial Layers JW Kleppinger, SK Chaudhuri, O Karadavut, R Nag, DLP Watson, ... IEEE Transactions on Nuclear Science 69 (8), 1972-1978, 2022 | 9 | 2022 |
Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection SK Chaudhuri, OF Karadavut, JW Kleppinger, R Nag, G Yang, D Lee, ... IEEE Electron Device Letters 43 (9), 1416-1419, 2022 | 8 | 2022 |
Characterization of vertical Bridgman grown Cd0.9Zn0.1Te0.97Se0.03 single crystal for room-temperature radiation detection R Nag, SK Chaudhuri, JW Kleppinger, OF Karadavut, KC Mandal Journal of Materials Science: Materials in Electronics 32, 26740-26749, 2021 | 8 | 2021 |
Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors OF Karadavut, SK Chaudhuri, JW Kleppinger, R Nag, KC Mandal Journal of Crystal Growth 584, 126566, 2022 | 6 | 2022 |
Vertical gradient freeze growth of detector grade CdZnTeSe single crystals R Nag, SK Chaudhuri, JW Kleppinger, OF Karadavut, KC Mandal Journal of Crystal Growth 596, 126826, 2022 | 5 | 2022 |
Performance-Improved Vertical Ni/SiO₂/4H-SiC Metal–Oxide–Semiconductor Capacitors for High-Resolution Radiation Detection O Karadavut, SK Chaudhuri, JW Kleppinger, R Nag, KC Mandal IEEE Transactions on Nuclear Science 69 (8), 1965-1971, 2022 | 4 | 2022 |
Synthesis of CdZnTeSe single crystals for room temperature radiation detector fabrication: mitigation of hole trapping effects using a convolutional neural network SK Chaudhuri, JW Kleppinger, OF Karadavut, R Nag, R Panta, ... Journal of Materials Science: Materials in Electronics 33 (3), 1452-1463, 2022 | 3 | 2022 |
Alpha Particle Detection Using Highly Rectifying Ni/GaO/4H-SiC Heteroepitaxial MOS Junction SK Chaudhuri, R Nag, I Ahmad, KC Mandal IEEE Transactions on Electron Devices, 2023 | 2 | 2023 |
Charge trapping effects in THM-and VGF-grown CdZnTeSe radiation detectors SK Chaudhuri, R Nag, JW Kleppinger, UN Roy, RB James, KC Mandal IEEE Transactions on Nuclear Science, 2023 | 1 | 2023 |
Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials JW Kleppinger, SK Chaudhuri, R Nag, UN Roy, RB James, KC Mandal Applied Physics Letters 123 (6), 2023 | 1 | 2023 |
High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications KC Mandal, SK Chaudhuri, R Nag Micromachines 14 (8), 1532, 2023 | 1 | 2023 |
A novel Ni/Y2O3/4H-SiC heteroepitaxial metal–oxide–semiconductor (MOS) betavoltaic cell SK Chaudhuri, R Nag, KC Mandal Journal of Materials Science: Materials in Electronics 34 (6), 543, 2023 | 1 | 2023 |
Growth, characterization and evaluation of CdZnTeSe single crystals for room temperature radiation detectors R Nag University of South Carolina, 2022 | 1 | 2022 |
High-resolution 4H-SiC Schottky barrier radiation detectors on 250 micron epitaxial layers for harsh environment applications JW Kleppinger, O Karadavut, R Nag, SK Chaudhuri, KC Mandal Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII 11838, 138-148, 2021 | 1 | 2021 |
Correlation of transport properties with charge trapping parameters in Cd0. 9Zn0. 1Te1-xSex room temperature gamma-ray detectors R Nag, SK Chaudhuri, KC Mandal Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXV, PC1269604, 2023 | | 2023 |
Investigation of Charge Transport Properties and the Role of Point Defects in CdZnTeSe Room Temperature Radiation Detectors SK Chaudhuri, R Nag, JW Kleppinger, KC Mandal High-Z Materials for X-ray Detection: Material Properties and …, 2023 | | 2023 |