A new theoretical approach to adsorption–desorption behavior of Ga on GaAs surfaces Y Kangawa, T Ito, A Taguchi, K Shiraishi, T Ohachi Surface science 493 (1-3), 178-181, 2001 | 169 | 2001 |
Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach Y Kangawa, T Akiyama, T Ito, K Shiraishi, T Nakayama Materials 6 (8), 3309-3360, 2013 | 109 | 2013 |
Theoretical approach to influence of As2 pressure on GaAs growth kinetics Y Kangawa, T Ito, YS Hiraoka, A Taguchi, K Shiraishi, T Ohachi Surface science 507, 285-289, 2002 | 100 | 2002 |
Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell H Matsuo, RB Ganesh, S Nakano, L Liu, Y Kangawa, K Arafune, ... Journal of Crystal Growth 310 (22), 4666-4671, 2008 | 79 | 2008 |
Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs (0 0 1) Y Kangawa, T Ito, A Taguchi, K Shiraishi, T Irisawa, T Ohachi Applied surface science 190 (1-4), 517-520, 2002 | 79 | 2002 |
Anomalous behavior of excess energy curves of InxGa1− xN grown on GaN and InN Y Kangawa, T Ito, A Mori, A Koukitu Journal of crystal growth 220 (4), 401-404, 2000 | 52 | 2000 |
Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth Y Kumagai, T Yamane, T Miyaji, H Murakami, Y Kangawa, A Koukitu physica status solidi (c), 2498-2501, 2003 | 50 | 2003 |
Thermal conductivity of SiC calculated by molecular dynamics T Kawamura, D Hori, Y Kangawa, K Kakimoto, M Yoshimura, Y Mori Japanese journal of applied physics 47 (12R), 8898, 2008 | 48 | 2008 |
Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth Y Inatomi, Y Kangawa, T Ito, T Suski, Y Kumagai, K Kakimoto, A Koukitu Japanese journal of applied physics 56 (7), 078003, 2017 | 47 | 2017 |
Thermodynamic analysis of (0001) and GaN metalorganic vapor phase epitaxy A Kusaba, Y Kangawa, P Kempisty, H Valencia, K Shiraishi, Y Kumagai, ... Japanese journal of applied physics 56 (7), 070304, 2017 | 46 | 2017 |
Thermodynamic analysis of AlGaN HVPE growth A Koukitu, J Kikuchi, Y Kangawa, Y Kumagai Journal of crystal growth 281 (1), 47-54, 2005 | 44 | 2005 |
Evolution of the free energy of the GaN (0001) surface based on first-principles phonon calculations P Kempisty, Y Kangawa Physical Review B 100 (8), 085304, 2019 | 39 | 2019 |
Novel solution growth method of bulk AlN using Al and Li3N solid sources Y Kangawa, R Toki, T Yayama, BM Epelbaum, K Kakimoto Applied physics express 4 (9), 095501, 2011 | 39 | 2011 |
InSb mid-infrared photon detector for room-temperature operation K Ueno, EG Camargo, T Katsumata, H Goto, N Kuze, Y Kangawa, ... Japanese Journal of Applied Physics 52 (9R), 092202, 2013 | 38 | 2013 |
Investigation of thermal conductivity of GaN by molecular dynamics T Kawamura, Y Kangawa, K Kakimoto Journal of crystal growth 284 (1-2), 197-202, 2005 | 35 | 2005 |
DFT modeling of carbon incorporation in GaN (0001) and GaN (0001¯) metalorganic vapor phase epitaxy P Kempisty, Y Kangawa, A Kusaba, K Shiraishi, S Krukowski, ... Applied Physics Letters 111 (14), 2017 | 31 | 2017 |
Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory T Shiramomo, B Gao, F Mercier, S Nishizawa, S Nakano, Y Kangawa, ... Journal of crystal growth 352 (1), 177-180, 2012 | 30 | 2012 |
Growth of GaN directly on Si (111) substrate by controlling atomic configuration of Si surface by metalorganic vapor phase epitaxy K Takemoto, H Murakami, T Iwamoto, Y Matsuo, Y Kangawa, Y Kumagai, ... Japanese journal of applied physics 45 (5L), L478, 2006 | 29 | 2006 |
Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy T Yamane, H Murakami, Y Kangawa, Y Kumagai, A Koukitu physica status solidi (c) 2 (7), 2062-2065, 2005 | 29 | 2005 |
Thermodynamic considerations of the vapor phase reactions in III–nitride metal organic vapor phase epitaxy K Sekiguchi, H Shirakawa, K Chokawa, M Araidai, Y Kangawa, ... Japanese Journal of Applied Physics 56 (4S), 04CJ04, 2017 | 27 | 2017 |