| Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy U Serincan, G Kartopu, A Guennes, TG Finstad, R Turan, Y Ekinci, ... Semiconductor science and technology 19 (2), 247, 2003 | 67 | 2003 |
| Structural and optical properties of porous nanocrystalline Ge G Kartopu, AV Sapelkin, VA Karavanskii, U Serincan, R Turan Journal of Applied Physics 103 (11), 2008 | 58 | 2008 |
| Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence S Yerci, U Serincan, I Dogan, S Tokay, M Genisel, A Aydinli, R Turan Journal of Applied Physics 100 (7), 2006 | 58 | 2006 |
| Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation M Kulakci, U Serincan, R Turan Semiconductor science and technology 21 (12), 1527, 2006 | 38 | 2006 |
| Can chemically etched germanium or germanium nanocrystals emit visible photoluminescence? G Kartopu, VA Karavanskii, U Serincan, R Turan, RE Hummel, Y Ekinci, ... physica status solidi (a) 202 (8), 1472-1476, 2005 | 37 | 2005 |
| Mechanisms of void formation in Ge implanted SiO2 films ES Marstein, AE Gunnæs, U Serincan, S Jørgensen, A Olsen, R Turan, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2003 | 37 | 2003 |
| Thermal activation energy of crystal and amorphous nano-silicon in SiO2 matrix J Wang, M Righini, A Gnoli, S Foss, T Finstad, U Serincan, R Turan Solid state communications 147 (11-12), 461-464, 2008 | 35 | 2008 |
| Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs/GaSb superlattice photodiodes T Tansel, K Kutluer, Ö Salihoglu, A Aydinli, B Aslan, B Arikan, MC Kilinc, ... IEEE Photonics Technology Letters 24 (9), 790-792, 2012 | 33 | 2012 |
| Spatial distribution of light-emitting centers in Si-implanted SiO2 U Serincan, G Aygun, R Turan Journal of luminescence 113 (3-4), 229-234, 2005 | 33 | 2005 |
| Nanocrystal and nanocluster formation and oxidation in annealed Ge-implanted SiO2 films ES Marstein, AE Gunnæs, U Serincan, R Turan, A Olsen, TG Finstad Surface and Coatings Technology 158, 544-547, 2002 | 29 | 2002 |
| Introduction of Si∕ SiO2 interface states by annealing Ge-implanted films ES Marstein, AE Gunnæs, A Olsen, TG Finstad, R Turan, U Serincan Journal of applied physics 96 (8), 4308-4312, 2004 | 26 | 2004 |
| The quantum confined Stark effect in silicon nanocrystals M Kulakci, U Serincan, R Turan, TG Finstad Nanotechnology 19 (45), 455403, 2008 | 21 | 2008 |
| Variation of photoluminescence from Si nanostructures in SiO2 matrix with Si+ post implantation U Serincan, M Kulakci, R Turan, S Foss, TG Finstad Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007 | 21 | 2007 |
| Evolution of SiO2 matrix during the formation of Ge and Si nanocrystals by ion implantation U Serincan, S Yerci, M Kulakci, R Turan Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2005 | 18 | 2005 |
| Electrical properties of nitrogen implanted GaSe single crystal O Karabulut, M Parlak, R Turan, U Serincan, E Tasarkuyu, BG Akįnoglu Crystal Research and Technology: Journal of Experimental and Industrial …, 2003 | 17 | 2003 |
| On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses B Arikan, G Korkmaz, YE Suyolcu, B Aslan, U Serincan Thin Solid Films 548, 288-291, 2013 | 16 | 2013 |
| Evolution of vibrational modes of SiO2 during the formation of Ge and Si nanocrystals by ion implantation and magnetron sputtering A Gencer Imer, S Yerci, AS Alagoz, M Kulakci, U Serincan, TG Finstad, ... Journal of Nanoscience and Nanotechnology 10 (1), 525-531, 2010 | 16 | 2010 |
| Ion beam synthesis and characterization of Ge nanoparticles in SiO2 UV Desnica, M Buljan, P Dubcek, Z Siketic, IB Radovic, S Bernstorff, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006 | 16 | 2006 |
| Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array M Korkmaz, B Arikan, YE Suyolcu, B Aslan, U Serincan Semiconductor Science and Technology 33 (3), 035002, 2018 | 14 | 2018 |
| Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation S Yerci, I Yildiz, M Kulakci, U Serincan, M Barozzi, M Bersani, R Turan Journal of Applied Physics 102 (2), 2007 | 14 | 2007 |
