| High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide HJ Osten, JP Liu, P Gaworzewski, E Bugiel, P Zaumseil International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 204 | 2000 |
| Growth of an inverse tetragonal distorted SiGe layer on Si (001) by adding small amounts of carbon HJ Osten, E Bugiel, P Zaumseil Applied physics letters 64 (25), 3440-3442, 1994 | 194 | 1994 |
| Theoretical aspects of isotope effects on nuclear shielding CJ Jameson, H Osten Annual Rep. NMR Spectrosc 17, 1-78, 1986 | 185 | 1986 |
| Suppressed diffusion of boron and carbon in carbon-rich silicon H Rücker, B Heinemann, W Röpke, R Kurps, D Krüger, G Lippert, ... Applied Physics Letters 73 (12), 1682-1684, 1998 | 184 | 1998 |
| Strain-stabilized highly concentrated pseudomorphic Si 1− x C x layers in Si H Rücker, M Methfessel, E Bugiel, HJ Osten Physical review letters 72 (22), 3578, 1994 | 144 | 1994 |
| Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCy on Si(001) HJ Osten, M Kim, K Pressel, P Zaumseil Journal of Applied Physics 80 (12), 6711-6715, 1996 | 139 | 1996 |
| Epitaxial growth of on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth annealing JP Liu, P Zaumseil, E Bugiel, HJ Osten Applied Physics Letters 79 (5), 671-673, 2001 | 135 | 2001 |
| Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001) A Fissel, J Dabrowski, HJ Osten Journal of applied physics 91 (11), 8986-8991, 2002 | 131 | 2002 |
| Growth and properties of strained Si1-x-yGexCy layers SC Jain, HJ Osten, B Dietrich, H Rucker Semiconductor science and technology 10 (10), 1289, 1995 | 131 | 1995 |
| Band gap and band discontinuities at crystalline heterojunctions HJ Osten, JP Liu, HJ Müssig Applied physics letters 80 (2), 297-299, 2002 | 130 | 2002 |
| Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon A Fissel, Z Elassar, O Kirfel, E Bugiel, M Czernohorsky, HJ Osten Journal of applied Physics 99 (7), 2006 | 127 | 2006 |
| Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si (001) M Czernohorsky, E Bugiel, HJ Osten, A Fissel, O Kirfel Applied Physics Letters 88 (15), 2006 | 120 | 2006 |
| Surfactant-controlled solid phase epitaxy of germanium on silicon HJ Osten, J Klatt, G Lippert, B Dietrich, E Bugiel Physical review letters 69 (3), 450, 1992 | 115 | 1992 |
| Introducing crystalline rare‐earth oxides into Si technologies HJ Osten, A Laha, M Czernohorsky, E Bugiel, R Dargis, A Fissel physica status solidi (a) 205 (4), 695-707, 2008 | 108 | 2008 |
| Epitaxial praseodymium oxide: a new high-k dielectric HJ Osten, E Bugiel, A Fissel, T Guminskaya, JP Liu, HJ Mussig, ... Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 …, 2001 | 94 | 2001 |
| Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x‐ray diffraction B Dietrich, E Bugiel, J Klatt, G Lippert, T Morgenstern, HJ Osten, ... Journal of applied physics 74 (5), 3177-3180, 1993 | 91 | 1993 |
| Improvement of the SRH bulk lifetime upon formation of n-type POLO junctions for 25% efficient Si solar cells J Krügener, F Haase, M Rienäcker, R Brendel, HJ Osten, R Peibst Solar Energy Materials and Solar Cells 173, 85-91, 2017 | 88 | 2017 |
| Lattice distortion in a strain-compensated Si 1− x− y Ge x C y layer on silicon B Dietrich, HJ Osten, H Rücker, M Methfessel, P Zaumseil Physical Review B 49 (24), 17185, 1994 | 88 | 1994 |
| Towards understanding epitaxial growth of alternative high- dielectrics on Si(001): Application to praseodymium oxide A Fissel, HJ Osten, E Bugiel Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 87 | 2003 |
| Influence of interface layer composition on the electrical properties of epitaxial thin films for high- application A Laha, HJ Osten, A Fissel Applied Physics Letters 90 (11), 113508, 2007 | 85 | 2007 |
Apurba LahaProfessor, Department of Electrical Engineering, Indian Institute of Technology Bombay在 ee.iitb.ac.in 的电子邮件经过验证
