| Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ... Applied Physics Letters 111 (24), 2017 | 271 | 2017 |
| Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ... Applied Physics Letters 92 (9), 2008 | 208 | 2008 |
| The effect of interfacial layer properties on the performance of Hf-based gate stack devices G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ... Journal of Applied Physics 100 (9), 2006 | 195 | 2006 |
| Mechanism of Electron Trapping and Characteristics of Traps in Gate Stacks G Bersuker, JH Sim, CS Park, CD Young, SV Nadkarni, R Choi, BH Lee IEEE Transactions on Device and Materials Reliability 7 (1), 138-145, 2007 | 170 | 2007 |
| Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400° C) Hf0. 5Zr0. 5O2 films SJ Kim, J Mohan, J Lee, JS Lee, AT Lucero, CD Young, L Colombo, ... Applied Physics Letters 112 (17), 2018 | 137 | 2018 |
| High-k gate stacks for planar, scaled CMOS integrated circuits HR Huff, A Hou, C Lim, Y Kim, J Barnett, G Bersuker, GA Brown, ... Microelectronic Engineering 69 (2-4), 152-167, 2003 | 127 | 2003 |
| Conventional n-channel MOSFET devices using single layer HfO/sub 2/and ZrO/sub 2/as high-k gate dielectrics with polysilicon gate electrode Y Kim, G Gebara, M Freiler, J Barnett, D Riley, J Chen, K Torres, JE Lim, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 94 | 2001 |
| Interfacial layer-induced mobility degradation in high-k transistors G Bersuker, J Barnett, N Moumen, B Foran, CD Young, P Lysaght, ... Japanese journal of applied physics 43 (11S), 7899, 2004 | 93 | 2004 |
| Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric G Bersuker, D Heh, C Young, H Park, P Khanal, L Larcher, A Padovani, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 90 | 2008 |
| Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics P Sivasubramani, TS Boscke, J Huang, CD Young, PD Kirsch, ... 2007 IEEE Symposium on VLSI Technology, 68-69, 2007 | 85 | 2007 |
| Electron trap generation in high-/spl kappa/gate stacks by constant voltage stress CD Young, D Heh, SV Nadkarni, R Choi, JJ Peterson, J Barnett, BH Lee, ... IEEE Transactions on Device and Materials Reliability 6 (2), 123-131, 2006 | 84 | 2006 |
| Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) BH Lee, CD Young, R Choi, JH Sim, G Bersuker, CY Kang, R Harris, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 84 | 2004 |
| Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis P Zhao, A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, E Caruso, ... 2D Materials 5 (3), 031002, 2018 | 83 | 2018 |
| Effect of pre-existing defects on reliability assessment of high G Bersuker, JH Sim, CD Young, R Choi, PM Zeitzoff, GA Brown Microelectron. Reliabil 44 (5), 1509-1512, 2004 | 83 | 2004 |
| Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs GX Duan, CX Zhang, EX Zhang, J Hachtel, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 61 (6), 2834-2838, 2014 | 81 | 2014 |
| Spatial distributions of trapping centers in HfO2∕ SiO2 gate stacks D Heh, CD Young, GA Brown, PY Hung, A Diebold, G Bersuker, EM Vogel, ... Applied physics letters 88 (15), 2006 | 81 | 2006 |
| Pulsed – Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling CD Young, Y Zhao, D Heh, R Choi, BH Lee, G Bersuker IEEE Transactions on electron devices 56 (6), 1322-1329, 2009 | 76 | 2009 |
| Effects of ALD HfO2 thickness on charge trapping and mobility JH Sim, SC Song, PD Kirsch, CD Young, R Choi, DL Kwong, BH Lee, ... Microelectronic Engineering 80, 218-221, 2005 | 73 | 2005 |
| Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer P Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD Young Applied Physics Letters 111 (3), 2017 | 72 | 2017 |
| Experimental Evidence of the Fast and Slow Charge Trapping/Detrapping Processes in High- k Dielectrics Subjected to PBTI Stress D Heh, CD Young, G Bersuker IEEE electron device letters 29 (2), 180-182, 2008 | 72 | 2008 |
Byoung Hun LeePohang University of Science and Technology在 postech.ac.kr 的电子邮件经过验证
