受强制性开放获取政策约束的文章 - Haotian Xue了解详情
无法在其他位置公开访问的文章：2 篇
Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices
L Shvilberg, T Mimura, H Xue, JJ Wierer, EA Paisley, H Heinrich, ...
IEEE Transactions on Electron Devices 70 (7), 3442-3446, 2023
强制性开放获取政策： US Department of Defense
GaN Subwavelength Gratings by Machine Learning Design
ON Ogidi-Ekoko, W Liang, H Xue, N Tansu
2020 IEEE Photonics Conference (IPC), 1-2, 2020
强制性开放获取政策： US National Science Foundation
可在其他位置公开访问的文章：8 篇
Recombination rate analysis of ingan-based red-emitting light-emitting diodes
H Xue, SA Al Muyeed, E Palmese, D Rogers, R Song, N Tansu, JJ Wierer
IEEE Journal of Quantum Electronics 59 (2), 1-9, 2023
强制性开放获取政策： US National Science Foundation
Thermal oxidation of lattice mismatched Al1-xInxN films on GaN
E Palmese, H Xue, R Song, JJ Wierer Jr
e-Prime-Advances in Electrical Engineering, Electronics and Energy 5, 100208, 2023
强制性开放获取政策： US National Science Foundation
Structural and optical characterization of thin AlInN films on c-plane GaN substrates
H Xue, E Palmese, R Song, MI Chowdhury, NC Strandwitz, JJ Wierer
Journal of Applied Physics 134 (7), 2023
强制性开放获取政策： US National Science Foundation
Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates
X Wei, SA Al Muyeed, H Xue, E Palmese, R Song, N Tansu, JJ Wierer Jr
Photonics Research 10 (1), 33-40, 2021
强制性开放获取政策： US National Science Foundation
Machine learning inspired design of complex-shaped GaN subwavelength grating reflectors
ON Ogidi-Ekoko, W Liang, H Xue, N Tansu
IEEE Photonics Journal 13 (1), 1-13, 2020
强制性开放获取政策： US National Science Foundation
Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates
E Palmese, H Xue, S Pavlidis, JJ Wierer
IEEE Transactions on Electron Devices, 2023
强制性开放获取政策： US National Science Foundation
Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm
SA Al Muyeed, D Borovac, H Xue, X Wei, R Song, N Tansu, JJ Wierer
IEEE Journal of Quantum Electronics 57 (6), 1-7, 2021
强制性开放获取政策： US National Science Foundation
Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots
X Wei, SA Al Muyeed, H Xue, JJ Wierer Jr
Materials 16 (5), 1890, 2023
强制性开放获取政策： US National Science Foundation
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