| Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions H Bracht, NA Stolwijk, H Mehrer Physical Review B 52 (23), 16542, 1995 | 422 | 1995 |
| Silicon self-diffusion in isotope heterostructures H Bracht, EE Haller, R Clark-Phelps Physical review letters 81 (2), 393, 1998 | 407 | 1998 |
| Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium S Brotzmann, H Bracht Journal of Applied Physics 103 (3), 2008 | 277 | 2008 |
| Diffusion of n-type dopants in germanium A Chroneos, H Bracht Applied Physics Reviews 1 (1), 2014 | 201 | 2014 |
| Vacancy-mediated dopant diffusion activation enthalpies for germanium A Chroneos, H Bracht, RW Grimes, BP Uberuaga Applied Physics Letters 92 (17), 2008 | 162 | 2008 |
| Self-and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon H Bracht, HH Silvestri, ID Sharp, EE Haller Physical Review B 75 (3), 035211, 2007 | 158 | 2007 |
| Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results S Brotzmann, H Bracht, JL Hansen, AN Larsen, E Simoen, EE Haller, ... Physical Review B 77 (23), 235207, 2008 | 149 | 2008 |
| Diffusion mechanisms and intrinsic point-defect properties in silicon H Bracht MRS bulletin 25 (6), 22-27, 2000 | 143 | 2000 |
| Self-diffusion in germanium isotope multilayers at low temperatures E Hüger, U Tietze, D Lott, H Bracht, D Bougeard, EE Haller, H Schmidt Applied Physics Letters 93 (16), 2008 | 130 | 2008 |
| Large disparity between gallium and antimony self-diffusion in gallium antimonide H Bracht, SP Nicols, W Walukiewicz, JP Silveira, F Briones, EE Haller Nature 408 (6808), 69-72, 2000 | 123 | 2000 |
| Diffusion and solubility of copper, silver, and gold in germanium H Bracht, NA Stolwijk, H Mehrer Physical review B 43 (18), 14465, 1991 | 122 | 1991 |
| Diffusion of silicon in crystalline germanium HH Silvestri, H Bracht, JL Hansen, AN Larsen, EE Haller Semiconductor science and technology 21 (6), 758, 2006 | 104 | 2006 |
| Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes A Chroneos, RW Grimes, BP Uberuaga, H Bracht Physical Review B 77 (23), 235208, 2008 | 98 | 2008 |
| Atomic transport in germanium and the mechanism of arsenic diffusion H Bracht, S Brotzmann Materials Science in Semiconductor Processing 9 (4-5), 471-476, 2006 | 97 | 2006 |
| Vacancy-arsenic clusters in germanium A Chroneos, RW Grimes, BP Uberuaga, S Brotzmann, H Bracht Applied Physics Letters 91 (19), 2007 | 95 | 2007 |
| Self-and foreign-atom diffusion in semiconductor isotope heterostructures. I. Continuum theoretical calculations H Bracht Physical Review B 75 (3), 035210, 2007 | 93 | 2007 |
| Copper related diffusion phenomena in germanium and silicon H Bracht Materials science in semiconductor processing 7 (3), 113-124, 2004 | 93 | 2004 |
| Cation diffusion and ionic conductivity in soda-lime silicate glasses FV Natrup, H Bracht, S Murugavel, B Roling Physical chemistry chemical physics 7 (11), 2279-2286, 2005 | 92 | 2005 |
| Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures H Bracht, JF Pedersen, N Zangenberg, AN Larsen, EE Haller, G Lulli, ... Physical review letters 91 (24), 245502, 2003 | 92 | 2003 |
| Diffusion of E centers in germanium predicted using GGA+ U approach H Tahini, A Chroneos, RW Grimes, U Schwingenschlögl, H Bracht Applied Physics Letters 99 (7), 2011 | 88 | 2011 |
