| Analysis of the potential for PV rooftop prosumer production: Technical, economic and environmental assessment for the city of Valencia (Spain) T Gómez-Navarro, T Brazzini, D Alfonso-Solar, C Vargas-Salgado Renewable Energy 174, 372-381, 2021 | 79 | 2021 |
| Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures S Pandey, D Cavalcoli, B Fraboni, A Cavallini, T Brazzini, F Calle Applied Physics Letters 100 (15), 2012 | 30 | 2012 |
| Mechanism of hot electron electroluminescence in GaN-based transistors T Brazzini, H Sun, F Sarti, JW Pomeroy, C Hodges, M Gurioli, A Vinattieri, ... Journal of Physics D: Applied Physics 49 (43), 435101, 2016 | 28 | 2016 |
| Investigation of AlInN barrier ISFET structures with GaN capping for pH detection T Brazzini, A Bengoechea-Encabo, MA Sánchez-García, F Calle Sensors and Actuators B: Chemical 176, 704-707, 2013 | 28 | 2013 |
| Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation T Brazzini, MA Casbon, H Sun, MJ Uren, J Lees, PJ Tasker, H Jung, ... Applied Physics Letters 106 (21), 2015 | 23 | 2015 |
| Learnings from local collaborative transformations: Setting a basis for a sustainability framework P Macedo, A Huertas, C Bottone, J del Río, N Hillary, T Brazzini, ... Sustainability 12 (3), 795, 2020 | 16 | 2020 |
| Hot-electron electroluminescence under RF operation in GaN-HEMTs: A comparison among operational classes T Brazzini, MA Casbon, MJ Uren, PJ Tasker, H Jung, H Blanck, M Kuball IEEE Transactions on Electron Devices 64 (5), 2155-2160, 2017 | 12 | 2017 |
| Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence T Brazzini, MA Casbon, H Sun, MJ Uren, J Lees, PJ Tasker, H Jung, ... Microelectronics Reliability 55 (12), 2493-2498, 2015 | 10 | 2015 |
| Nanocrack-induced leakage current in AlInN/AlN/GaN A Minj, D Cavalcoli, S Pandey, B Fraboni, A Cavallini, T Brazzini, F Calle Scripta Materialia 66 (6), 327-330, 2012 | 10 | 2012 |
| Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers GR Mutta, JM Routoure, B Guillet, L Méchin, J Grandal, S Martin-Horcajo, ... Applied Physics Letters 98 (25), 2011 | 9 | 2011 |
| Surface origin and control of resonance Raman scattering and surface band gap in indium nitride E Alarcón-Lladó, T Brazzini, JW Ager Journal of Physics D: Applied Physics 49 (25), 255102, 2016 | 8 | 2016 |
| Impact of AlN spacer on metal–semiconductor–metal Pt–InAlGaN/GaN heterostructures for ultraviolet detection T Brazzini, S Pandey, MF Romero, PY Bokov, M Feneberg, G Tabares, ... Japanese Journal of Applied Physics 52 (8S), 08JK04, 2013 | 7 | 2013 |
| Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures PY Bokov, T Brazzini, MF Romero, F Calle, M Feneberg, R Goldhahn Semiconductor Science and Technology 30 (8), 085014, 2015 | 5 | 2015 |
| Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures T Brazzini, MJ Tadjer, Ž Gačević, S Pandey, A Cavallini, F Calle Semiconductor science and technology 28 (5), 055007, 2013 | 4 | 2013 |
| Measuring the discomfort of energy vulnerable elderly people. Recommendations for solutions NG Lepetit, E Biard, I Aparisi-Cerdá, T Brazzini, C Montagud, ... IOP Conference Series: Earth and Environmental Science 1085 (1), 012016, 2022 | 3 | 2022 |
| Influence of fabrication steps on optical and electrical properties of InN thin films GR Mutta, T Brazzini, L Mechin, B Guillet, JM Routoure, JL Doualan, ... Semiconductor Science and Technology 29 (9), 095010, 2014 | 2 | 2014 |
| Analysis of InAl (Ga) N/GaN wet-etching by structural, morphological and electrical methods T Brazzini, S Martin-Horcajo, MF Romero, Ž Gacěvić, F Calle Semiconductor science and technology 29 (7), 075003, 2014 | 2 | 2014 |
| Simultaneous measurement of optical and RF behavior under CW and pulsed fully active harmonic load-pull MA Casbon, T Brazzini, PJ Tasker, M Uren, M Kuball 2016 87th ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2016 | 1 | 2016 |
| Investigation of AlInN barrier ISFET structures with GaN capping for pH detection T Brazzini, A Bengoechea Encabo, MA Sánchez García, F Calle Gómez Isom, 2012 | 1 | 2012 |
| Reliability challenges for GaN-based FETs M Kuball, MJ Uren, JW Pomeroy, S Karboyan, I Chatterjee, D Liu, J Anaya, ... The Japan Society of Applied Physics, 2016 | | 2016 |
