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Dong Hee Han
Dong Hee Han
Dept. of Advanced Materials Engineering for Information & Electronics, Kyung Hee University
在 khu.ac.kr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Y-doped HfO2 deposited by atomic layer deposition using a cocktail precursor for DRAM capacitor dielectric application
J Kim, BS Kim, AJ Lee, DH Han, JH Hwang, Y Kim, KC Song, H Oh, S Kim, ...
Ceramics International 48 (3), 3236-3242, 2022
162022
Reliable high work-function molybdenum dioxide synthesis via template-effect-utilizing atomic layer deposition for next-generation electrode applications
YW Kim, AJ Lee, DH Han, DC Lee, JH Hwang, Y Kim, S Moon, T Youn, ...
Journal of Materials Chemistry C 10 (36), 12957-12965, 2022
152022
Enhancing chemisorption efficiency and thin-film characteristics via a discrete feeding method in high-k dielectric atomic layer deposition for preventing interfacial layer …
AJ Lee, S Lee, DH Han, Y Kim, W Jeon
Journal of Materials Chemistry C 11 (21), 6894-6901, 2023
102023
An Empirical Investigation on the Effect of Oxygen Vacancy in ZrO2 Thin Film on the Frequency-Dependent Capacitance Degradation in the Metal–Insulator–Metal …
DH Han, S Lee, JH Hwang, Y Kim, M Bonvalot, C Vallée, P Gonon, ...
IEEE Transactions on Electron Devices 68 (11), 5753-5757, 2021
92021
Chemistry of ruthenium as an electrode for metal–insulator–metal capacitor application
EY Jung, J Bang, JH Hwang, DH Han, Y Kim, H Kim, W Jeon
Nanotechnology 32 (4), 045201, 2020
72020
An Al-doped TiO 2 interfacial layer for effective hole injection characteristics of quantum-dot light-emitting diodes
MG Kim, JS Shin, JH Ma, JH Jeong, DH Han, BS Kim, W Jeon, Y Park, ...
Journal of Materials Chemistry C 10 (18), 7294-7303, 2022
42022
Wake-Up and Endurance Characteristics in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitor Depending on the Crystal Orientation of the TiN Bottom …
DH Han, AJ Lee, MK Nam, S Lee, SJ Choi, Y Kim, T Moon, W Jeon
IEEE Transactions on Electron Devices 70 (4), 1983-1988, 2023
12023
Suppressing Interfacial Layer Formation in ZrO2-Based Capacitors with TiN Electrodes via a MgO Thin-Film Oxygen Diffusion Barrier
S Lee, HH Seol, MK Nam, DH Han, D Kim, H Oh, H Kim, Y Park, Y Kim, ...
ACS Applied Electronic Materials 6 (5), 3362-3373, 2024
2024
Investigating dielectric relaxation currents for a deeper understanding of capacitance and interface in metal-insulator-metal capacitor
DH Han, SJ Choi, Y Kim, W Jeon
IEEE Transactions on Dielectrics and Electrical Insulation, 2023
2023
Reliable high work-function molybdenum dioxide synthesis via template-effect-utilizing atomic layer deposition for next-generation electrode applications (Aug, 10.1039 …
YW Kim, AJ Lee, DH Han, DC Lee, JH Hwang, Y Kim, S Moon, T Youn, ...
JOURNAL OF MATERIALS CHEMISTRY C 10 (36), 13268-13269, 2022
2022
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