| Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits YF Lin, Y Xu, ST Wang, SL Li, M Yamamoto, A Aparecido‐Ferreira, W Li, ... Advanced Materials 26 (20), 3263-3269, 2014 | 466 | 2014 |
| Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2 M Yamamoto, ST Wang, M Ni, YF Lin, SL Li, S Aikawa, WB Jian, K Ueno, ... Acs Nano 8 (4), 3895-3903, 2014 | 340 | 2014 |
| Correlation between Quantized Electronic States and Oscillatory Thickness Relaxations of 2D Pb Islands on Si(111)-( ) Surfaces WB Su, SH Chang, WB Jian, CS Chang, LJ Chen, TT Tsong Physical Review Letters 86 (22), 5116, 2001 | 302 | 2001 |
| Perfect orientation ordered in-situ one-dimensional self-assembly of Mn-doped PbSe nanocrystals W Lu, P Gao, WB Jian, ZL Wang, J Fang Journal of the American Chemical Society 126 (45), 14816-14821, 2004 | 147 | 2004 |
| The impact of nanocontact on nanowire based nanoelectronics YF Lin, WB Jian Nano letters 8 (10), 3146-3150, 2008 | 141 | 2008 |
| High mobilities in layered InSe transistors with indium‐encapsulation‐induced surface charge doping M Li, CY Lin, SH Yang, YM Chang, JK Chang, FS Yang, C Zhong, ... Advanced Materials 30 (44), 1803690, 2018 | 140 | 2018 |
| Reversible and Precisely Controllable p/n‐Type Doping of MoTe2 Transistors through Electrothermal Doping YM Chang, SH Yang, CY Lin, CH Chen, CH Lien, WB Jian, K Ueno, ... Advanced Materials 30 (13), 1706995, 2018 | 84 | 2018 |
| Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals LS Lu, GH Chen, HY Cheng, CP Chuu, KC Lu, CH Chen, MY Lu, ... ACS nano 14 (4), 4963-4972, 2020 | 81 | 2020 |
| The First Synthesis of Pb1-x Mn x Se Nanocrystals T Ji, WB Jian, J Fang Journal of the American Chemical Society 125 (28), 8448-8449, 2003 | 81 | 2003 |
| Electronic growth of Pb islands on Si (111) at low temperature SH Chang, WB Su, WB Jian, CS Chang, LJ Chen, TT Tsong Physical Review B 65 (24), 245401, 2002 | 79 | 2002 |
| Nano approach investigation of the conduction mechanism in polyaniline nanofibers YF Lin, CH Chen, WJ Xie, SH Yang, CS Hsu, MT Lin, WB Jian Acs Nano 5 (2), 1541-1548, 2011 | 76 | 2011 |
| Vertical friedel oscillations in interface-induced surface charge modulations of ultrathin quantum islands WB Jian, WB Su, CS Chang, TT Tsong Physical review letters 90 (19), 196603, 2003 | 68 | 2003 |
| Fabrication of WO3 electrochromic devices using electro-exploding wire techniques and spray coating CM Chang, YC Chiang, MH Cheng, SH Lin, WB Jian, JT Chen, YJ Cheng, ... Solar Energy Materials and Solar Cells 223, 110960, 2021 | 57 | 2021 |
| Direct observation of structure effect on ferromagnetism in nanowires WB Jian, ZY Wu, RT Huang, FR Chen, JJ Kai, CY Wu, SJ Chiang, MD Lan, ... Physical Review B—Condensed Matter and Materials Physics 73 (23), 233308, 2006 | 54 | 2006 |
| Quantum-size-effect-enhanced dynamic magnetic interactions among doped spins in nanocrystals WB Jian, J Fang, T Ji, J He Applied physics letters 83 (16), 3377-3379, 2003 | 54 | 2003 |
| A versatile method to enhance the operational current of air-stable organic gas sensor for monitoring of breath ammonia in hemodialysis patients SY Yu, TW Tung, HY Yang, GY Chen, CC Shih, YC Lee, CC Chen, ... ACS sensors 4 (4), 1023-1031, 2019 | 53 | 2019 |
| Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section YF Lin, WB Jian, CP Wang, YW Suen, ZY Wu, FR Chen, JJ Kai, JJ Lin Applied physics letters 90 (22), 2007 | 52 | 2007 |
| Fabrication, characterization and studies of annealing effects on ferromagnetism in Zn1− xCoxO nanowires ZY Wu, FR Chen, JJ Kai, WB Jian, JJ Lin Nanotechnology 17 (21), 5511, 2006 | 43 | 2006 |
| Structural and Electrical Properties of Conducting Diamond Nanowires KJ Sankaran, YF Lin, WB Jian, HC Chen, K Panda, B Sundaravel, ... ACS applied materials & interfaces, 2013 | 40 | 2013 |
| Electron-phonon scattering times in crystalline disordered titanium alloys between 3 and 15 K CY Wu, WB Jian, JJ Lin Physical Review B 57 (18), 11232, 1998 | 39 | 1998 |
