受强制性开放获取政策约束的文章 - Dr. Deepak Kumar Panda了解详情
无法在其他位置公开访问的文章：6 篇
Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of RF and Microwave Computer‐Aided Engineering 31 (4 …, 2021
强制性开放获取政策： Department of Science & Technology, India
DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: drain and pocket engineering technique
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2022
强制性开放获取政策： Department of Science & Technology, India
Effect of drain engineering on DC and RF characteristics in Ge-source SD-ZHP-TFET
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
2021 Devices for Integrated Circuit (DevIC), 517-520, 2021
强制性开放获取政策： Department of Science & Technology, India
Investigation of β-Ga2O3-based HEMTs using 2D Simulations for low noise amplification and RF applications
R Singh, TR Lenka, DK Panda, HPT Nguyen
Engineering Research Express 3 (3), 035042, 2021
强制性开放获取政策： Department of Science & Technology, India
Ga2O3 Based Heterostructure FETs (HFETs) for Microwave and Millimeter-Wave Applications
R Singh, TR Lenka, D Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen
Emerging Trends in Terahertz Engineering and System Technologies: Devices …, 2021
强制性开放获取政策： Department of Science & Technology, India
Effect of Dielectric Material on Electrical Parameters Present near Source Region in Hetero Gate Dielectric TFET
R Saha, SK Mitra, DK Panda
Nanoelectronic Devices for Hardware and Software Security, 201-215, 2021
强制性开放获取政策： Department of Science & Technology, India
可在其他位置公开访问的文章：4 篇
The dawn of Ga2O3 HEMTs for high power electronics-A review
R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen
Materials Science in Semiconductor Processing 119, 105216, 2020
强制性开放获取政策： Department of Science & Technology, India
Performance evaluation of ZnSnN2 solar cells with Si back surface field using SCAPS-1D: A theoretical study
A Laidouci, VN Singh, PK Dakua, DK Panda
Heliyon 9 (10), 2023
强制性开放获取政策： Council of Scientific and Industrial Research, India
Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT
R Singh, TR Lenka, DK Panda, HPT Nguyen, NEI Boukortt, G Crupi
Materials Science in Semiconductor Processing 145, 106627, 2022
强制性开放获取政策： Department of Science & Technology, India
Analytical modeling of dielectric modulated negative capacitance MoS2 field effect transistor for next‐generation label‐free biosensor
DK Panda, TR Lenka, R Singh, V Goyal, NEI Boukortt, HPT Nguyen
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2023
强制性开放获取政策： Department of Science & Technology, India
出版信息和资助信息由计算机程序自动确定