| Ultrafast transient absorption microscopy studies of carrier dynamics in epitaxial graphene L Huang, GV Hartland, LQ Chu, Luxmi, RM Feenstra, C Lian, K Tahy, ... Nano letters 10 (4), 1308-1313, 2010 | 194 | 2010 |
| Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces Luxmi, N Srivastava, G He, RM Feenstra, PJ Fisher Physical Review B 82 (23), 235406, 2010 | 133 | 2010 |
| Graphene formed on SiC under various environments: comparison of Si-face and C-face N Srivastava, G He, Luxmi, PC Mende, RM Feenstra, Y Sun Journal of Physics D: Applied Physics 45 (15), 154001, 2012 | 90 | 2012 |
| Temperature dependence of epitaxial graphene formation on SiC (0001) Luxmi, S Nie, PJ Fisher, RM Feenstra, G Gu, Y Sun Journal of electronic materials 38 (6), 718-724, 2009 | 58 | 2009 |
| Formation of epitaxial graphene on SiC (0001) using vacuum or argon environments Luxmi, N Srivastava, RM Feenstra, PJ Fisher Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2010 | 46 | 2010 |
| Morphology of graphene on SiC( 000-1 ) surfaces Luxmi, PJ Fisher, N Srivastava, RM Feenstra, Y Sun, J Kedzierski, ... Appl. Phys. Lett 95, 073101, 2009 | 44* | 2009 |
| Thickness monitoring of graphene on SiC using low-energy electron diffraction PJ Fisher, Luxmi, N Srivastava, S Nie, RM Feenstra Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (4 …, 2010 | 22 | 2010 |
| Interface structure of graphene on SiC(0001¯) N Srivastava, G He, Luxmi, RM Feenstra Phys. Rev. B 85, 041404, 2012 | 11 | 2012 |
| The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics G Gu, Luxmi, PJ Fisher, N Srivastava, RM Feenstra Solid State Communications 149 (47), 2194-2198, 2009 | 8 | 2009 |
| Structural studies of epitaxial graphene formed on SiC{0001} surfaces Luxmi Carnegie Mellon University, 2010 | | 2010 |
