Surface photovoltage phase spectroscopy–a handy tool for characterisation of bulk semiconductors and nanostructures V Donchev, K Kirilov, T Ivanov, K Germanova Materials Science and Engineering: B 129 (1-3), 186-192, 2006 | 151 | 2006 |
Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications V Donchev Materials Research Express 6 (10), 103001, 2019 | 55 | 2019 |
A vector model for analysing the surface photovoltage amplitude and phase spectra applied to complicated nanostructures T Ivanov, V Donchev, K Germanova, K Kirilov Journal of Physics D: Applied Physics 42 (13), 135302, 2009 | 54 | 2009 |
Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot ES Moskalenko, V Donchev, KF Karlsson, PO Holtz, B Monemar, ... Physical Review B 68 (15), 155317, 2003 | 48 | 2003 |
Modular method for calculation of transmission and reflection in multilayered structures M Mazilu, A Miller, VT Donchev Applied Optics 40 (36), 6670-6676, 2001 | 38 | 2001 |
Band offset of GaAs-GaInP heterojunctions SL Feng, J Krynicki, V Donchev, JC Bourgoin, M Di Forte-Poisson, ... Semiconductor science and technology 8 (12), 2092, 1993 | 38 | 1993 |
Dark current through GaAs/AlGaAs multiple quantum wells V Donchev, JC Bourgoin, P Bois Semiconductor science and technology 17 (6), 621, 2002 | 28 | 2002 |
Characterization of thick epitaxial GaAs layers for X-ray detection H Samic, GC Sun, V Donchev, NX Nghia, M Gandouzi, M Zazoui, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2002 | 26 | 2002 |
Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots ES Moskalenko, FK Karlsson, VT Donchev, PO Holtz, B Monemar, ... Nano letters 5 (11), 2117-2122, 2005 | 25 | 2005 |
Surface photovoltage spectroscopy–an advanced method for characterization of semiconductor nanostructures V Donchev, T Ivanov, K Germanova, K Kirilov Trends in Applied Spectroscopy 8, 27- 66, 2010 | 24 | 2010 |
EL2 in photoconductivity spectra of Cr-doped SI GaAs bulk crystals K Germanova, V Donchev, C Hardalov, L Nikolov Journal of Physics D: Applied Physics 20 (11), 1507, 1987 | 23 | 1987 |
Electronic transport through semiconductor barriers H Chaabane, M Zazoui, JC Bourgoin, V Donchev Semiconductor science and technology 8 (12), 2077, 1993 | 18 | 1993 |
Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys M Milanova, V Donchev, KL Kostov, D Alonso-Álvarez, E Valcheva, ... Semiconductor Science and Technology 32 (8), 085005, 2017 | 17 | 2017 |
Single-junction solar cells based on pin GaAsSbN heterostructures grown by liquid phase epitaxy M Milanova, V Donchev, KJ Cheetham, Z Cao, I Sandall, GM Piana, ... Solar Energy 208, 659-664, 2020 | 15 | 2020 |
Study of GaAsSb: N bulk layers grown by liquid phase epitaxy for solar cells applications M Milanova, V Donchev, KL Kostov, D Alonso-Álvarez, P Terziyska, ... Materials Research Express 6 (7), 075521, 2019 | 14 | 2019 |
Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy V Donchev, M Milanova, I Asenova, N Shtinkov, D Alonso-Álvarez, ... Journal of Crystal Growth 483, 140-146, 2018 | 14 | 2018 |
Electronic structure of quantum wells embedded in short-period superlattices with graded interfaces N Shtinkov, V Donchev, K Germanova, H Kolev Semiconductor science and technology 15 (10), 946, 2000 | 12 | 2000 |
Effective removal of surface recombination centers in silicon nanowires fabricated by metal-assisted chemical etching V Donchev, S Georgiev, I Leontis, AG Nassiopoulou ACS Applied Energy Materials 1 (8), 3693-3701, 2018 | 11 | 2018 |
Photoluminescence study of AlAs/GaAs superlattices containing enlarged wells V Donchev, K Germanova, N Shtinkov, I Ivanov, S Vlaev Thin solid films 364 (1-2), 224-227, 2000 | 11 | 2000 |
Surface photovoltage and photoluminescence study of thick Ga (In) AsN layers grown by liquid-phase epitaxy V Donchev, M Milanova, J Lemieux, N Shtinkov, IG Ivanov Journal of Physics: Conference Series 700 (1), 012028, 2016 | 10 | 2016 |