| Interpreting the nonideal reverse bias CV characteristics and importance of the dependence of Schottky barrier height on applied voltage A Turut, M Saglam, H Efeoglu, N Yalcin, M Yildirim, B Abay Physica B: Condensed Matter 205 (1), 41-50, 1995 | 201 | 1995 |
| The relationship between refractive index-energy gap and the film thickness effect on the characteristic parameters of CdSe thin films Y Akaltun, MA Yıldırım, A Ateş, M Yıldırım Optics Communications 284 (9), 2307-2311, 2011 | 165 | 2011 |
| Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors E Turgut, Ö Çoban, S Sarıtaş, S Tüzemen, M Yıldırım, E Gür Applied Surface Science 435, 880-885, 2018 | 86 | 2018 |
| Structural, optical and electrical properties of CdS, Cd0. 5In0. 5S and In2S3 thin films grown by SILAR method M Kundakci, A Ateş, A Astam, M Yildirim Physica E: Low-Dimensional Systems and Nanostructures 40 (3), 600-605, 2008 | 61 | 2008 |
| Dynamic microenvironment induces phenotypic plasticity of esophageal cancer cells under flow G Calibasi Kocal, S Güven, K Foygel, A Goldman, P Chen, S Sengupta, ... Scientific reports 6 (1), 38221, 2016 | 54 | 2016 |
| The effect of manganese on the microstructure and mechanical properties of leaded-tin bronze H Turhan, M Aksoy, V Kuzucu, MM Yıldırım Journal of Materials Processing Technology 114 (3), 207-211, 2001 | 53 | 2001 |
| Investigation of optical and structural properties of CdS thin films A Ates, MA Yildirim, M Kundakci, M Yildirim Chinese Journal of Physics 45, 135-141, 2007 | 51 | 2007 |
| Örneklem ve örnekleme yöntemleri M Yıldırım Eğitimde araştırma yöntemleri, 61-92, 2019 | 46 | 2019 |
| Ni: Fe2O3, Mg: Fe2O3 and Fe2O3 thin films gas sensor application S Saritas, M Kundakci, O Coban, S Tuzemen, M Yildirim Physica B: Condensed Matter 541, 14-18, 2018 | 41 | 2018 |
| Taşıt kaynaklı kirleticilerin azaltılma yöntemleri B Alkaya, M Yıldırım ÇEV-KOR Ekoloji Çevre Dergisi 9 (34), 15-20, 2000 | 41 | 2000 |
| Annealing and light effect on optical and electrical properties of evaporated indium selenide thin films A Ateş, M Kundakçı, A Astam, M Yıldırım Physica E: Low-dimensional Systems and Nanostructures 40 (8), 2709-2713, 2008 | 40 | 2008 |
| Conversion of SILAR deposited Cu3Se2 thin films to Cu2− xSe by annealing A Astam, Y Akaltun, M Yıldırım Materials Letters 166, 9-11, 2016 | 36 | 2016 |
| Temperature dependence of galvanomagnetic properties for Gd doped and undoped -type GaSe B Gürbulak, M Yildirim, S Tüzemen, H Efeoǧlu, YK Yoǧurtçu Journal of applied physics 83 (4), 2030-2034, 1998 | 33 | 1998 |
| Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals DE Yildiz, HH Gullu, A Sarilmaz, F Ozel, A Kocyigit, M Yildirim Journal of Materials Science: Materials in Electronics 31, 935-948, 2020 | 32 | 2020 |
| Growth and temperature dependence of optical properties of Er doped and undoped n-Type InSe B Gürbulak, M Yildirim, A Ateş, S Doğan, YK Yoğurtçu Japanese journal of applied physics 38 (9R), 5133, 1999 | 32 | 1999 |
| Convertibility of conductivity type in reactively sputtered ZnO thin films S Tüzemen, S Doğan, A Ateş, M Yįldįrįm, G Xiong, J Wilkinson, ... physica status solidi (a) 195 (1), 165-170, 2003 | 28 | 2003 |
| Electrothermal investigation of the switching effect in p-Type TllnSe2, TllnTe2, and TIGaTe2 chain chalcogenide semiconductors B Abay, B Gürbulak, M Yildirim, H Efeoglu, S Tuzemen, YK Yogurtçu Journal of electronic materials 25, 1054-1059, 1996 | 28 | 1996 |
| Growth and Optical Properties of Ho Doped n‐Type Indium Selenide B Gürbulak, M Yildirim, B Abay, S Tüzemen, M Alieva, YK Yoğurtç physica status solidi (a) 168 (2), 495-500, 1998 | 27 | 1998 |
| Absorption measurement and Urbach’s rule in InSe and InSe: Ho0. 0025, InSe: Ho0. 025 single crystals A Ateş, M Yıldırım, B Gürbulak Optical Materials 28 (5), 488-493, 2006 | 25 | 2006 |
| Zinc concentration effect on structural, optical and electrical properties of Cd1− xZnxSe thin films Y Akaltun, MA Yıldırım, A Ateş, M Yıldırım Materials Research Bulletin 47 (11), 3390-3396, 2012 | 23 | 2012 |
