1.3 μm room-temperature GaAs-based quantum-dot laser DL Huffaker, G Park, Z Zou, OB Shchekin, DG Deppe Applied Physics Letters 73 (18), 2564-2566, 1998 | 1080 | 1998 |
Native‐oxide defined ring contact for low threshold vertical‐cavity lasers DL Huffaker, DG Deppe, K Kumar, TJ Rogers Applied Physics Letters 65 (1), 97-99, 1994 | 854 | 1994 |
Low-threshold oxide-confined 1.3-μm quantum-dot laser G Park, OB Shchekin, DL Huffaker, DG Deppe IEEE Photonics Technology Letters 12 (3), 230-232, 2000 | 427 | 2000 |
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ... Applied physics letters 88 (13), 2006 | 307 | 2006 |
GaAs nanopillar-array solar cells employing in situ surface passivation G Mariani, AC Scofield, CH Hung, DL Huffaker Nature communications 4 (1), 1497, 2013 | 291 | 2013 |
GaSb∕ GaAs type II quantum dot solar cells for enhanced infrared spectral response RB Laghumavarapu, A Moscho, A Khoshakhlagh, M El-Emawy, LF Lester, ... Applied Physics Letters 90 (17), 2007 | 251 | 2007 |
Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser G Park, OB Shchekin, S Csutak, DL Huffaker, DG Deppe Applied physics letters 75 (21), 3267-3269, 1999 | 235 | 1999 |
Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots DL Huffaker, DG Deppe Applied physics letters 73 (4), 520-522, 1998 | 232 | 1998 |
Improved device performance of InAs∕ GaAs quantum dot solar cells with GaP strain compensation layers RB Laghumavarapu, M El-Emawy, N Nuntawong, A Moscho, LF Lester, ... Applied Physics Letters 91 (24), 2007 | 216 | 2007 |
Patterned radial GaAs nanopillar solar cells G Mariani, PS Wong, AM Katzenmeyer, F Léonard, J Shapiro, DL Huffaker Nano letters 11 (6), 2490-2494, 2011 | 185 | 2011 |
Spontaneous emission from planar microstructures DG Deppe, C Lei, CC Lin, DL Huffaker Journal of Modern Optics 41 (2), 325-344, 1994 | 172 | 1994 |
Low threshold half-wave vertical-cavity lasers DL Huffaker, J Shin, DG Deppe Electronics Letters 30 (23), 1946-1947, 1994 | 168 | 1994 |
Discrete energy level separation and the threshold temperature dependence of quantum dot lasers OB Shchekin, G Park, DL Huffaker, DG Deppe Applied Physics Letters 77 (4), 466-468, 2000 | 167 | 2000 |
Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors DL Huffaker, LA Graham, H Deng, DG Deppe IEEE Photonics Technology Letters 8 (8), 974-976, 1996 | 155 | 1996 |
Bottom-up photonic crystal lasers AC Scofield, SH Kim, JN Shapiro, A Lin, B Liang, A Scherer, DL Huffaker Nano letters 11 (12), 5387-5390, 2011 | 153 | 2011 |
Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers G Park, DL Huffaker, Z Zou, OB Shchekin, DG Deppe IEEE Photonics Technology Letters 11 (3), 301-303, 1999 | 153 | 1999 |
Topological insulator laser using valley-Hall photonic crystals Y Gong, S Wong, AJ Bennett, DL Huffaker, SS Oh Acs Photonics 7 (8), 2089-2097, 2020 | 136 | 2020 |
IEEE photon H Park, OB Shchekin, DL Huffaker, DG Deppe Technol. Lett 19 (4), 2007 | 132 | 2007 |
Interfacial misfit array formation for GaSb growth on GaAs S Huang, G Balakrishnan, DL Huffaker Journal of Applied Physics 105 (10), 2009 | 131 | 2009 |
Surface plasmon-enhanced nanopillar photodetectors P Senanayake, CH Hung, J Shapiro, A Lin, B Liang, BS Williams, ... Nano letters 11 (12), 5279-5283, 2011 | 129 | 2011 |